JPH0255949B2 - - Google Patents

Info

Publication number
JPH0255949B2
JPH0255949B2 JP61014933A JP1493386A JPH0255949B2 JP H0255949 B2 JPH0255949 B2 JP H0255949B2 JP 61014933 A JP61014933 A JP 61014933A JP 1493386 A JP1493386 A JP 1493386A JP H0255949 B2 JPH0255949 B2 JP H0255949B2
Authority
JP
Japan
Prior art keywords
input
mosfet
circuit
channel
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61014933A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62172752A (ja
Inventor
Akihiro Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP61014933A priority Critical patent/JPS62172752A/ja
Publication of JPS62172752A publication Critical patent/JPS62172752A/ja
Publication of JPH0255949B2 publication Critical patent/JPH0255949B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP61014933A 1986-01-27 1986-01-27 半導体集積回路 Granted JPS62172752A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61014933A JPS62172752A (ja) 1986-01-27 1986-01-27 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61014933A JPS62172752A (ja) 1986-01-27 1986-01-27 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS62172752A JPS62172752A (ja) 1987-07-29
JPH0255949B2 true JPH0255949B2 (enrdf_load_stackoverflow) 1990-11-28

Family

ID=11874768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61014933A Granted JPS62172752A (ja) 1986-01-27 1986-01-27 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS62172752A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4488074A1 (de) 2023-07-07 2025-01-08 LANXESS Deutschland GmbH Kautschukmischungen enthaltend polyethylenimin und mindestens ein prozesshilfsmittel enthaltend mindestens eine fettsäure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100290887B1 (ko) * 1998-05-14 2001-07-12 김영환 고전압보호회로

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4488074A1 (de) 2023-07-07 2025-01-08 LANXESS Deutschland GmbH Kautschukmischungen enthaltend polyethylenimin und mindestens ein prozesshilfsmittel enthaltend mindestens eine fettsäure

Also Published As

Publication number Publication date
JPS62172752A (ja) 1987-07-29

Similar Documents

Publication Publication Date Title
US5617283A (en) Self-referencing modulation circuit for CMOS integrated circuit electrostatic discharge protection clamps
CN100463174C (zh) 半导体集成电路装置
US5789964A (en) Decoupling capacitor network for off-state operation
US6128171A (en) Gate-coupled structure for enhanced ESD input/output pad protection in CMOS ICs
US5946175A (en) Secondary ESD/EOS protection circuit
US6867957B1 (en) Stacked-NMOS-triggered SCR device for ESD-protection
EP0172305A1 (en) Mos transistor circuit with breakdown protection
JPH06163824A (ja) 半導体集積回路
JPH09134997A (ja) 半導体素子における静電放電保護装置
US7742265B2 (en) High voltage power supply clamp circuitry for electrostatic discharge (ESD) protection
JP3061260B2 (ja) 静電気保護回路
KR20080076411A (ko) 정전기 보호 회로
US5705941A (en) Output driver for use in semiconductor integrated circuit
RU2308146C2 (ru) Устройство защиты выводов интегральных схем со структурой мдп от электростатических разрядов
US5942931A (en) Circuit for protecting an IC from noise
US7362554B2 (en) Electrostatic discharge (ESD) clamp using output driver
JP3420967B2 (ja) 半導体集積回路
CN100538911C (zh) 半导体存储器件
JPH0255949B2 (enrdf_load_stackoverflow)
JP4285792B2 (ja) 半導体集積回路装置における静電破壊保護回路
JP2839624B2 (ja) 半導体集積回路
JPH0379120A (ja) 入力保護回路
KR100907894B1 (ko) 정전기 방전 보호회로
JPS6010767A (ja) 半導体装置
KR100554328B1 (ko) 반도체 장치

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees