JPS6217097A - 液相エピタキシヤル成長法 - Google Patents

液相エピタキシヤル成長法

Info

Publication number
JPS6217097A
JPS6217097A JP15234085A JP15234085A JPS6217097A JP S6217097 A JPS6217097 A JP S6217097A JP 15234085 A JP15234085 A JP 15234085A JP 15234085 A JP15234085 A JP 15234085A JP S6217097 A JPS6217097 A JP S6217097A
Authority
JP
Japan
Prior art keywords
solution
meltback
substrate
growth
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15234085A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0566353B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Tsunehiro Unno
恒弘 海野
Mineo Wajima
峰生 和島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP15234085A priority Critical patent/JPS6217097A/ja
Publication of JPS6217097A publication Critical patent/JPS6217097A/ja
Publication of JPH0566353B2 publication Critical patent/JPH0566353B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP15234085A 1985-07-12 1985-07-12 液相エピタキシヤル成長法 Granted JPS6217097A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15234085A JPS6217097A (ja) 1985-07-12 1985-07-12 液相エピタキシヤル成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15234085A JPS6217097A (ja) 1985-07-12 1985-07-12 液相エピタキシヤル成長法

Publications (2)

Publication Number Publication Date
JPS6217097A true JPS6217097A (ja) 1987-01-26
JPH0566353B2 JPH0566353B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-09-21

Family

ID=15538396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15234085A Granted JPS6217097A (ja) 1985-07-12 1985-07-12 液相エピタキシヤル成長法

Country Status (1)

Country Link
JP (1) JPS6217097A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154398A (en) * 1979-05-16 1980-12-01 Fujitsu Ltd Growing method and apparatus for liquid phase multi- layered membrane of semiconductor
JPS56114897A (en) * 1980-02-07 1981-09-09 Mitsubishi Electric Corp Method for liquid-phase epitaxial growth

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154398A (en) * 1979-05-16 1980-12-01 Fujitsu Ltd Growing method and apparatus for liquid phase multi- layered membrane of semiconductor
JPS56114897A (en) * 1980-02-07 1981-09-09 Mitsubishi Electric Corp Method for liquid-phase epitaxial growth

Also Published As

Publication number Publication date
JPH0566353B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-09-21

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees