JPS6216537B2 - - Google Patents

Info

Publication number
JPS6216537B2
JPS6216537B2 JP56035022A JP3502281A JPS6216537B2 JP S6216537 B2 JPS6216537 B2 JP S6216537B2 JP 56035022 A JP56035022 A JP 56035022A JP 3502281 A JP3502281 A JP 3502281A JP S6216537 B2 JPS6216537 B2 JP S6216537B2
Authority
JP
Japan
Prior art keywords
temperature
heat treatment
semiconductor device
epitaxial layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56035022A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57167635A (en
Inventor
Kazunori Imaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56035022A priority Critical patent/JPS57167635A/ja
Priority to EP82301212A priority patent/EP0060676B1/en
Priority to DE8282301212T priority patent/DE3280219D1/de
Priority to IE559/82A priority patent/IE55966B1/en
Publication of JPS57167635A publication Critical patent/JPS57167635A/ja
Priority to US06/598,544 priority patent/US4597804A/en
Publication of JPS6216537B2 publication Critical patent/JPS6216537B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/90—
JP56035022A 1981-03-11 1981-03-11 Manufacture of semiconductor device Granted JPS57167635A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP56035022A JPS57167635A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device
EP82301212A EP0060676B1 (en) 1981-03-11 1982-03-10 A method for the production of a semiconductor device comprising annealing a silicon wafer
DE8282301212T DE3280219D1 (de) 1981-03-11 1982-03-10 Verfahren zur herstellung einer halbleiteranordnung mit ausgluehen eines halbleiterkoerpers.
IE559/82A IE55966B1 (en) 1981-03-11 1982-03-11 A method for the production of a semiconductor device comprising annealing a silicon wafer
US06/598,544 US4597804A (en) 1981-03-11 1984-04-12 Methods of forming denuded zone in wafer by intrinsic gettering and forming bipolar transistor therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56035022A JPS57167635A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57167635A JPS57167635A (en) 1982-10-15
JPS6216537B2 true JPS6216537B2 (OSRAM) 1987-04-13

Family

ID=12430429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56035022A Granted JPS57167635A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57167635A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251050U (OSRAM) * 1985-09-20 1987-03-30

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6251050U (OSRAM) * 1985-09-20 1987-03-30

Also Published As

Publication number Publication date
JPS57167635A (en) 1982-10-15

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