JPS62156838A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS62156838A JPS62156838A JP60298860A JP29886085A JPS62156838A JP S62156838 A JPS62156838 A JP S62156838A JP 60298860 A JP60298860 A JP 60298860A JP 29886085 A JP29886085 A JP 29886085A JP S62156838 A JPS62156838 A JP S62156838A
- Authority
- JP
- Japan
- Prior art keywords
- metal film
- active layer
- type active
- film wiring
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60298860A JPS62156838A (ja) | 1985-12-27 | 1985-12-27 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60298860A JPS62156838A (ja) | 1985-12-27 | 1985-12-27 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62156838A true JPS62156838A (ja) | 1987-07-11 |
JPH0562823B2 JPH0562823B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-09-09 |
Family
ID=17865127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60298860A Granted JPS62156838A (ja) | 1985-12-27 | 1985-12-27 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62156838A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1985
- 1985-12-27 JP JP60298860A patent/JPS62156838A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0562823B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-09-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5226232A (en) | Method for forming a conductive pattern on an integrated circuit | |
TW544883B (en) | Manufacturing method of semiconductor device | |
US9153509B2 (en) | Fault tolerant design for large area nitride semiconductor devices | |
US5457072A (en) | Process for dicing a semiconductor wafer having a plated heat sink using a temporary substrate | |
KR102579734B1 (ko) | 연성 기판 상의 집적 회로 제조 공정 | |
US3747202A (en) | Method of making beam leads on substrates | |
CN114038828A (zh) | 半导体封装结构及其形成方法 | |
JPS62156838A (ja) | 半導体装置の製造方法 | |
US4095330A (en) | Composite semiconductor integrated circuit and method of manufacture | |
US6074948A (en) | Method for manufacturing thin semiconductor device | |
JPS5851433B2 (ja) | 横形電界効果トランジスタの製造方法 | |
US6551912B2 (en) | Method of forming a conductive coating on a semiconductor device | |
JPH0777265B2 (ja) | 半導体装置の製造方法 | |
CN218333849U (zh) | 一种芯片封装载板 | |
TW586169B (en) | Semiconductor die package with semiconductor die having side electrical connection | |
JPH0758132A (ja) | 半導体装置の製造方法 | |
JPS6386458A (ja) | バンプ付icチツプの製造方法、及び製造用ウエハ | |
JP3629365B2 (ja) | 金属バンプの形成方法 | |
US3668774A (en) | Method of separating semiconductor chips from a semiconductor substrate | |
JPH0786281A (ja) | 半導体装置および半導体装置の製造方法 | |
JP2576462B2 (ja) | 半導体装置の製造方法 | |
JP2517585B2 (ja) | バンプメツキ方法 | |
JPS63204663A (ja) | 半導体装置の製造方法 | |
JP2003109987A (ja) | フリップチップ実装基板および半導体装置 | |
GB2244176A (en) | Method and apparatus for forming a conductive pattern on an integrated circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |