JPS62155548A - Electrostatic protective circuit element for semiconductor integrated circuit - Google Patents
Electrostatic protective circuit element for semiconductor integrated circuitInfo
- Publication number
- JPS62155548A JPS62155548A JP29690285A JP29690285A JPS62155548A JP S62155548 A JPS62155548 A JP S62155548A JP 29690285 A JP29690285 A JP 29690285A JP 29690285 A JP29690285 A JP 29690285A JP S62155548 A JPS62155548 A JP S62155548A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- substrate
- protective resistor
- input
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000001681 protective effect Effects 0.000 title abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000009792 diffusion process Methods 0.000 claims abstract description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 230000000295 complement effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】 〔′産業上の利用分野〕 本発明は半導体集積回路の静電保護回路素子に関する。[Detailed description of the invention] ['Industrial application field] The present invention relates to an electrostatic protection circuit element for a semiconductor integrated circuit.
従来、この種の静電保護回路素子は、第２図で示すよう
に端子３が保護抵抗４を介し、保護ダ、イオード７，８
に接続され、さらに保護抵抗９を介して保護すべき素子
１０（ここではインバータ）のゲートに接続される構成
になっており、さらに保護抵抗４は半導体基板上の酸化
膜上に作られていた。静電気が端子３に印加された場合
に、抵抗４とダイオード７あるいは８を介して正又は負
の電源端子１，２に流すことにより保護すべき素子１０
にはダイオードの両端電圧程度の低い電圧しか印加され
ないようにして保護している。ここで５．６はダイオー
ド７．８の内部抵抗である。Conventionally, in this type of electrostatic protection circuit element, as shown in FIG.
and further connected to the gate of an element 10 (inverter in this case) to be protected via a protective resistor 9, and the protective resistor 4 was formed on an oxide film on the semiconductor substrate. . Element 10 to be protected by flowing it to the positive or negative power terminals 1 and 2 via the resistor 4 and the diode 7 or 8 when static electricity is applied to the terminal 3.
is protected by applying only a voltage as low as the voltage across the diode. Here, 5.6 is the internal resistance of the diode 7.8.
第３図は従来の静電保護回路素子の保護抵抗部の断面図
である。第３図に於て、１１は基板で、基板１１上に酸
化膜１２が形成され、酸化膜１２上に多結晶シリコンよ
りなる保護抵抗４が形成され、保護抵抗４は絶縁層１３
で被覆され、保護抵抗４の両端部に開口が設けられ端子
３が設けられている。なお１６は表面保護膜である。FIG. 3 is a sectional view of a protective resistor section of a conventional electrostatic protection circuit element. In FIG. 3, 11 is a substrate, an oxide film 12 is formed on the substrate 11, a protective resistor 4 made of polycrystalline silicon is formed on the oxide film 12, and the protective resistor 4 is connected to an insulating layer 13.
The protective resistor 4 is coated with an opening and a terminal 3 is provided at both ends of the protective resistor 4. Note that 16 is a surface protective film.
上述した従来の保護抵抗４は、第３図の断面図で示した
ように、半導体基板１１上の酸化［１２の上に形成され
ているため、静電気が端子３と基板１１間に印加される
と端子３と保護抵抗４との接合領域４から多結晶シリコ
ン４、酸化膜１２を介して基板１１に電界破壊を起し、
端子３と基板１１が電気的に短絡してしまうという問題
がある。As shown in the cross-sectional view of FIG. 3, the conventional protective resistor 4 described above is formed on the oxidized layer 12 on the semiconductor substrate 11, so that static electricity is applied between the terminal 3 and the substrate 11. An electric field breakdown occurs in the substrate 11 from the junction region 4 between the terminal 3 and the protective resistor 4 through the polycrystalline silicon 4 and the oxide film 12.
There is a problem in that the terminal 3 and the substrate 11 are electrically short-circuited.
本発明の目的は、従来の問題点を除去し、簡単な構造で
端子と基板電位との短絡を防止できる半導体集積回路の
静電保護回路素子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an electrostatic protection circuit element for a semiconductor integrated circuit that eliminates the problems of the conventional art and can prevent short circuits between terminals and substrate potential with a simple structure.
本発明の半導体集積回路の静電保護回路素子は、半導体
基板上で直接多結晶シリコンに接続される入出力端子を
有する半導体集積回路の静電保護回路素子において、少
なくとも前記入出力端子と多結晶シリコンとの接合部の
直下に前記半導体基板と異なる導電型を有する拡散層が
形成されている構造を有している。An electrostatic protection circuit element for a semiconductor integrated circuit according to the present invention is an electrostatic protection circuit element for a semiconductor integrated circuit having an input/output terminal directly connected to polycrystalline silicon on a semiconductor substrate. It has a structure in which a diffusion layer having a conductivity type different from that of the semiconductor substrate is formed directly below the junction with silicon.
第１図（ａ）、（ｂ）は、本発明の一実施例の平面図及
び断面図である。FIGS. 1(a) and 1(b) are a plan view and a sectional view of an embodiment of the present invention.
第１図（ａ）、（ｂ）に示すように実施例は入出力端子
３が保護抵抗４に接続され、他端から池素子へ接続され
るが、その保護抵抗４の多結晶シリコンの直下に基板１
１と異なる導電型をもつ拡散層１５を形成し、とくに拡
散層１５は、他の拡散層とは分離し、拡散層１５には、
電位を供給せずフローティングとする。しかるときは、
従来入出力端子と保護抵抗の接合領域１４から基板１１
との間に従来の絶縁膜１２の厚さに拡散層の深さ分の厚
さが加えられたことになるので、基板への電界破壊強度
が一層高められた静電保護回路素子が得られる。尚、拡
散層１５としては例えは相補型ＭＯＳ集積回路装置のウ
ェル領域を用いれば工程の追加はなく、従来と同じ価格
で実現できる。As shown in FIGS. 1(a) and 1(b), in the embodiment, the input/output terminal 3 is connected to the protective resistor 4, and the other end is connected to the pond element, but directly below the polycrystalline silicon of the protective resistor 4. board 1
In particular, the diffusion layer 15 is separated from other diffusion layers, and the diffusion layer 15 has a conductivity type different from that of the diffusion layer 15.
Floating without supplying potential. When scolded,
From the conventional input/output terminal and protective resistor junction area 14 to the board 11
Since the thickness corresponding to the depth of the diffusion layer is added to the thickness of the conventional insulating film 12, an electrostatic protection circuit element with further increased electric field breakdown strength to the substrate can be obtained. . Incidentally, if a well region of a complementary MOS integrated circuit device is used as the diffusion layer 15, no additional process is required and the cost can be the same as that of the conventional method.
また、第１図では、保護抵抗４の直下すべてに拡散層１
５を形成しているが、保護抵抗４の接合領域１４の直下
のみに拡散層を形成してもよい。In addition, in FIG. 1, there is a diffusion layer 1 immediately below the protective resistor
However, a diffusion layer may be formed only directly under the junction region 14 of the protective resistor 4.
以上説明したように本発明は、多結晶シリコンの保護抵
抗の下に拡散層を形成することで、端子と保護抵抗の接
合領域から基板までの絶縁領域が基板上に形成した絶縁
膜の厚さから拡散層の深さ分の厚さが加えられ、基板へ
の電界破壊強度を一層高めることができる。As explained above, in the present invention, by forming a diffusion layer under a polycrystalline silicon protective resistor, the insulating region from the junction area of the terminal and the protective resistor to the substrate has the thickness of the insulating film formed on the substrate. The thickness corresponding to the depth of the diffusion layer is added to the layer, and the electric field breakdown strength to the substrate can be further increased.
第１図（ａ）、（ｂ）は、本発明の一実施例の平面図お
よび断面図、第２図は、従来の一般的な入力保護回路図
、第３図は、従来の静電保護回路素子の断面図である。
１．２・・・電源、３・・・端子、４．９・・・保護抵
抗、５．６・・・抵抗、７．８・・・保護ダイオード、
１０・・・インバータ、１１・・・基板、１２・・・酸
化膜、１３・・・絶縁層、１４・・・接合部、１５・・
・拡散層、１６・・・表面保護膜。Figures 1 (a) and (b) are a plan view and a sectional view of an embodiment of the present invention, Figure 2 is a conventional general input protection circuit diagram, and Figure 3 is a conventional electrostatic protection circuit diagram. FIG. 3 is a cross-sectional view of a circuit element. 1.2... Power supply, 3... Terminal, 4.9... Protection resistor, 5.6... Resistor, 7.8... Protection diode,
DESCRIPTION OF SYMBOLS 10... Inverter, 11... Substrate, 12... Oxide film, 13... Insulating layer, 14... Joint part, 15...
- Diffusion layer, 16... surface protection film.
Claims (1)
端子を有する半導体集積回路の静電保護回路素子におい
て、少なくとも前記入出力端子と多結晶シリコンとの接
合部の直下に前記半導体基板と異なる導電型を有する拡
散層が形成されていることを特徴とする半導体集積回路
の静電保護回路素子。In an electrostatic protection circuit element for a semiconductor integrated circuit having an input/output terminal directly connected to polycrystalline silicon on a semiconductor substrate, there is a conductive layer different from that of the semiconductor substrate immediately below the junction between the input/output terminal and the polycrystalline silicon. An electrostatic protection circuit element for a semiconductor integrated circuit, characterized in that a diffusion layer having a shape is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29690285A JPS62155548A (en) | 1985-12-27 | 1985-12-27 | Electrostatic protective circuit element for semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29690285A JPS62155548A (en) | 1985-12-27 | 1985-12-27 | Electrostatic protective circuit element for semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62155548A true JPS62155548A (en) | 1987-07-10 |
Family
ID=17839634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29690285A Pending JPS62155548A (en) | 1985-12-27 | 1985-12-27 | Electrostatic protective circuit element for semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62155548A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01286459A (en) * | 1988-05-13 | 1989-11-17 | Nec Corp | Protecting device for semiconductor integrated circuit |
| US8269312B2 (en) * | 2008-06-05 | 2012-09-18 | Rohm Co., Ltd. | Semiconductor device with resistive element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144454A (en) * | 1984-08-09 | 1986-03-04 | Fujitsu Ltd | Semiconductor device |
-
1985
- 1985-12-27 JP JP29690285A patent/JPS62155548A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144454A (en) * | 1984-08-09 | 1986-03-04 | Fujitsu Ltd | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01286459A (en) * | 1988-05-13 | 1989-11-17 | Nec Corp | Protecting device for semiconductor integrated circuit |
| US8269312B2 (en) * | 2008-06-05 | 2012-09-18 | Rohm Co., Ltd. | Semiconductor device with resistive element |
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