JPS62152165A - バイポ−ラトランジスタの製造方法 - Google Patents

バイポ−ラトランジスタの製造方法

Info

Publication number
JPS62152165A
JPS62152165A JP60295211A JP29521185A JPS62152165A JP S62152165 A JPS62152165 A JP S62152165A JP 60295211 A JP60295211 A JP 60295211A JP 29521185 A JP29521185 A JP 29521185A JP S62152165 A JPS62152165 A JP S62152165A
Authority
JP
Japan
Prior art keywords
layer
emitter
collector
base
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60295211A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0575170B2 (cs
Inventor
Kazuo Eda
江田　和生
Masaki Inada
稲田　雅紀
Toshimichi Oota
順道 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60295211A priority Critical patent/JPS62152165A/ja
Publication of JPS62152165A publication Critical patent/JPS62152165A/ja
Publication of JPH0575170B2 publication Critical patent/JPH0575170B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP60295211A 1985-12-25 1985-12-25 バイポ−ラトランジスタの製造方法 Granted JPS62152165A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60295211A JPS62152165A (ja) 1985-12-25 1985-12-25 バイポ−ラトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60295211A JPS62152165A (ja) 1985-12-25 1985-12-25 バイポ−ラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS62152165A true JPS62152165A (ja) 1987-07-07
JPH0575170B2 JPH0575170B2 (cs) 1993-10-20

Family

ID=17817639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60295211A Granted JPS62152165A (ja) 1985-12-25 1985-12-25 バイポ−ラトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS62152165A (cs)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5012318A (en) * 1988-09-05 1991-04-30 Nec Corporation Hybrid semiconductor device implemented by combination of heterojunction bipolar transistor and field effect transistor
US5111265A (en) * 1988-12-06 1992-05-05 Nec Corporation Collector-top type transistor causing no deterioration in current gain
US5138408A (en) * 1988-04-15 1992-08-11 Nec Corporation Resonant tunneling hot carrier transistor
JPH04267529A (ja) * 1991-02-22 1992-09-24 Nec Corp コレクタトップ型ヘテロ接合バイポーラトランジスタの製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5138408A (en) * 1988-04-15 1992-08-11 Nec Corporation Resonant tunneling hot carrier transistor
US5012318A (en) * 1988-09-05 1991-04-30 Nec Corporation Hybrid semiconductor device implemented by combination of heterojunction bipolar transistor and field effect transistor
US5111265A (en) * 1988-12-06 1992-05-05 Nec Corporation Collector-top type transistor causing no deterioration in current gain
JPH04267529A (ja) * 1991-02-22 1992-09-24 Nec Corp コレクタトップ型ヘテロ接合バイポーラトランジスタの製造方法

Also Published As

Publication number Publication date
JPH0575170B2 (cs) 1993-10-20

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