JPS62152164A - バイポ−ラトランジスタの製造方法 - Google Patents
バイポ−ラトランジスタの製造方法Info
- Publication number
- JPS62152164A JPS62152164A JP60295201A JP29520185A JPS62152164A JP S62152164 A JPS62152164 A JP S62152164A JP 60295201 A JP60295201 A JP 60295201A JP 29520185 A JP29520185 A JP 29520185A JP S62152164 A JPS62152164 A JP S62152164A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- base
- collector
- layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000605 extraction Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 20
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60295201A JPS62152164A (ja) | 1985-12-25 | 1985-12-25 | バイポ−ラトランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60295201A JPS62152164A (ja) | 1985-12-25 | 1985-12-25 | バイポ−ラトランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62152164A true JPS62152164A (ja) | 1987-07-07 |
| JPH0575169B2 JPH0575169B2 (enrdf_load_stackoverflow) | 1993-10-20 |
Family
ID=17817505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60295201A Granted JPS62152164A (ja) | 1985-12-25 | 1985-12-25 | バイポ−ラトランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62152164A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01233768A (ja) * | 1988-03-14 | 1989-09-19 | Nec Corp | バイポーラトランジスタ |
| JP2008116075A (ja) * | 2006-11-01 | 2008-05-22 | Tgk Co Ltd | 膨張弁 |
-
1985
- 1985-12-25 JP JP60295201A patent/JPS62152164A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01233768A (ja) * | 1988-03-14 | 1989-09-19 | Nec Corp | バイポーラトランジスタ |
| JP2008116075A (ja) * | 2006-11-01 | 2008-05-22 | Tgk Co Ltd | 膨張弁 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0575169B2 (enrdf_load_stackoverflow) | 1993-10-20 |
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