JPS6214953B2 - - Google Patents

Info

Publication number
JPS6214953B2
JPS6214953B2 JP54101951A JP10195179A JPS6214953B2 JP S6214953 B2 JPS6214953 B2 JP S6214953B2 JP 54101951 A JP54101951 A JP 54101951A JP 10195179 A JP10195179 A JP 10195179A JP S6214953 B2 JPS6214953 B2 JP S6214953B2
Authority
JP
Japan
Prior art keywords
film
silicon
polycrystalline silicon
gate electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54101951A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5626469A (en
Inventor
Isamu Myagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP10195179A priority Critical patent/JPS5626469A/ja
Publication of JPS5626469A publication Critical patent/JPS5626469A/ja
Publication of JPS6214953B2 publication Critical patent/JPS6214953B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures

Landscapes

  • Optical Transform (AREA)
  • Electrodes Of Semiconductors (AREA)
JP10195179A 1979-08-10 1979-08-10 Field-effect transistor Granted JPS5626469A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10195179A JPS5626469A (en) 1979-08-10 1979-08-10 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10195179A JPS5626469A (en) 1979-08-10 1979-08-10 Field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5626469A JPS5626469A (en) 1981-03-14
JPS6214953B2 true JPS6214953B2 (enrdf_load_stackoverflow) 1987-04-04

Family

ID=14314191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10195179A Granted JPS5626469A (en) 1979-08-10 1979-08-10 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5626469A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03501319A (ja) * 1988-04-19 1991-03-22 エス・ベー・エフ・アウト　‐　エレクトリツク・ゲー・エムベーハー 自動車における風防ワイパ装置を駆動するためのワイパモータ用の電気モータ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03501319A (ja) * 1988-04-19 1991-03-22 エス・ベー・エフ・アウト　‐　エレクトリツク・ゲー・エムベーハー 自動車における風防ワイパ装置を駆動するためのワイパモータ用の電気モータ

Also Published As

Publication number Publication date
JPS5626469A (en) 1981-03-14

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