JPS62138387A - 引上結晶の直径測定装置 - Google Patents

引上結晶の直径測定装置

Info

Publication number
JPS62138387A
JPS62138387A JP27736285A JP27736285A JPS62138387A JP S62138387 A JPS62138387 A JP S62138387A JP 27736285 A JP27736285 A JP 27736285A JP 27736285 A JP27736285 A JP 27736285A JP S62138387 A JPS62138387 A JP S62138387A
Authority
JP
Japan
Prior art keywords
diameter
line
pulled
crystal
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP27736285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0369877B2 (esLanguage
Inventor
Toshio Abe
安部　登志男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON SILICON KK
Mitsubishi Metal Corp
Original Assignee
NIPPON SILICON KK
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON SILICON KK, Mitsubishi Metal Corp filed Critical NIPPON SILICON KK
Priority to JP27736285A priority Critical patent/JPS62138387A/ja
Publication of JPS62138387A publication Critical patent/JPS62138387A/ja
Publication of JPH0369877B2 publication Critical patent/JPH0369877B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP27736285A 1985-12-10 1985-12-10 引上結晶の直径測定装置 Granted JPS62138387A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27736285A JPS62138387A (ja) 1985-12-10 1985-12-10 引上結晶の直径測定装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27736285A JPS62138387A (ja) 1985-12-10 1985-12-10 引上結晶の直径測定装置

Publications (2)

Publication Number Publication Date
JPS62138387A true JPS62138387A (ja) 1987-06-22
JPH0369877B2 JPH0369877B2 (esLanguage) 1991-11-05

Family

ID=17582465

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27736285A Granted JPS62138387A (ja) 1985-12-10 1985-12-10 引上結晶の直径測定装置

Country Status (1)

Country Link
JP (1) JPS62138387A (esLanguage)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6464299A (en) * 1987-09-03 1989-03-10 Seiko Epson Corp Shielding material
JPH02164789A (ja) * 1988-12-16 1990-06-25 Komatsu Denshi Kinzoku Kk 単結晶直径自動制御装置
US6583810B1 (en) 1995-10-30 2003-06-24 Sumitomo Sitix Corporation Method and apparatus for measuring a diameter of a single crystal

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838301A (esLanguage) * 1971-09-15 1973-06-06
JPS55130895A (en) * 1979-03-28 1980-10-11 Hitachi Ltd Single crystal preparing method and apparatus therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4838301A (esLanguage) * 1971-09-15 1973-06-06
JPS55130895A (en) * 1979-03-28 1980-10-11 Hitachi Ltd Single crystal preparing method and apparatus therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6464299A (en) * 1987-09-03 1989-03-10 Seiko Epson Corp Shielding material
JPH02164789A (ja) * 1988-12-16 1990-06-25 Komatsu Denshi Kinzoku Kk 単結晶直径自動制御装置
US6583810B1 (en) 1995-10-30 2003-06-24 Sumitomo Sitix Corporation Method and apparatus for measuring a diameter of a single crystal

Also Published As

Publication number Publication date
JPH0369877B2 (esLanguage) 1991-11-05

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