JPS6213821B2 - - Google Patents
Info
- Publication number
- JPS6213821B2 JPS6213821B2 JP57059682A JP5968282A JPS6213821B2 JP S6213821 B2 JPS6213821 B2 JP S6213821B2 JP 57059682 A JP57059682 A JP 57059682A JP 5968282 A JP5968282 A JP 5968282A JP S6213821 B2 JPS6213821 B2 JP S6213821B2
- Authority
- JP
- Japan
- Prior art keywords
- support plate
- auxiliary support
- electrode
- crescent
- shaped part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 230000002950 deficient Effects 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000002265 prevention Effects 0.000 description 8
- 230000001105 regulatory effect Effects 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- NGZXDRGWBULKFA-VSGBNLITSA-N curine Chemical compound C([C@H]1N(C)CCC=2C=C(C(=C(OC3=CC=C(C=C3)C[C@@H]3C=4C=C(C(=CC=4CCN3C)OC)O3)C=21)O)OC)C1=CC=C(O)C3=C1 NGZXDRGWBULKFA-VSGBNLITSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置に係わり、特に、平型パツ
ケージ内での半導体素子の位置決め構造に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and particularly to a structure for positioning a semiconductor element within a flat package.
第１図は従来のこの種半導体装置を示してお
り、１は気密容器で、セラミツク筒２の両端開孔
部に上側電極３、下側電極４が気密に設けられて
いる。３ａ，４ａは各電極３，４の一部をなす弾
性体である。５は半導体素子でpnpn4層構造の半
導体基体６とその下主表面に鑞付されたモリブデ
ンあるいはタングステンの補助支持板７から構成
されている。上主表面には電極膜８、ゲートリー
ド９が設けられている。ゲートリード９はパイプ
１０を介して気密容器外へ導出されている。 FIG. 1 shows a conventional semiconductor device of this type. Reference numeral 1 denotes an airtight container, and an upper electrode 3 and a lower electrode 4 are airtightly provided in openings at both ends of a ceramic cylinder 2. 3a and 4a are elastic bodies forming a part of each electrode 3 and 4. Reference numeral 5 denotes a semiconductor element, which is composed of a semiconductor substrate 6 having a pnpn four-layer structure and an auxiliary support plate 7 made of molybdenum or tungsten brazed to its lower main surface. An electrode film 8 and a gate lead 9 are provided on the upper main surface. The gate lead 9 is led out of the airtight container via a pipe 10.
電極４と補助支持板７、電極３と電極膜８は両
電極３，４間に加えられる圧力によつて圧接され
るものであり、電極４と補助支持板７は移動防止
体１１によつて係合関係を保ち、気密容器１内で
の自由な移動が規制されている。 The electrode 4 and the auxiliary support plate 7 and the electrode 3 and the electrode membrane 8 are brought into pressure contact by the pressure applied between the electrodes 3 and 4. The engagement relationship is maintained, and free movement within the airtight container 1 is restricted.
第２図はこの移動防止体１１を示しており、内
壁は電極４の外壁に接する円形面１１ａ、直線面
１１ｂと補助支持板７の外壁に接する円形面１１
ｃ直線面１１ｂとから構成されている。電極４、
補助支持板７の外壁も、これら内壁面１１ａ〜１
１ｂに相似した形にされ、直線面１１ｂ，１１ｄ
により半導体素子５の回転方向の移動が規制さ
れ、全体で水平方向への移動が規制されている。 FIG. 2 shows this movement prevention body 11, and the inner wall is a circular surface 11a in contact with the outer wall of the electrode 4, a linear surface 11b, and a circular surface 11 in contact with the outer wall of the auxiliary support plate 7.
c and a straight line surface 11b. electrode 4,
The outer wall of the auxiliary support plate 7 also has these inner wall surfaces 11a to 1.
1b, and linear surfaces 11b and 11d
The movement of the semiconductor element 5 in the rotational direction is regulated, and the movement in the horizontal direction is regulated as a whole.
従来のこのような構造では直線面が２ケ所に分
かれているため、公差が大きくなり、半導体素子
５の回転防止が正確にできない問題があつた。 In such a conventional structure, since the linear plane is divided into two places, the tolerance becomes large and there is a problem that rotation of the semiconductor element 5 cannot be accurately prevented.
従つて、本発明の目的は、公差を小さくし、正
確に位置決めをすることができる半導体装置を提
供するにある。 SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor device that can reduce tolerances and perform accurate positioning.
以下、本発明の特徴とするところを図面に示す
実施例に基いて説明する。 Hereinafter, the features of the present invention will be explained based on embodiments shown in the drawings.
第３図は本発明の一実施例を示しており、第１
図と同一符号は同一物あるいは相当物を示してい
る。 FIG. 3 shows an embodiment of the present invention.
The same reference numerals as in the figures indicate the same or equivalent parts.
第４図は本発明において用いられる移動防止体
１２を示しており、馬蹄形部１２ａ、三ケ月状部
１２ｂ、環状部１３ｃから構成される。三ケ月状
部１２ｂは馬蹄形部１２ａの端部に位置して、丁
度環状部１３ｃの内側にはめ合わされた形となつ
ている。即ち、馬蹄形部１２ａ、三ケ月状部１２
ｂ、環状部１２ｃなる呼称は説明の都合によるも
のであり、移動防止体１２はAl、Cu等の金属や
ふつ素系レジンで製作されている。 FIG. 4 shows the movement preventing body 12 used in the present invention, which is composed of a horseshoe-shaped part 12a, a crescent-shaped part 12b, and an annular part 13c. The crescent-shaped portion 12b is located at the end of the horseshoe-shaped portion 12a, and is shaped to fit inside the annular portion 13c. That is, the horseshoe-shaped portion 12a, the crescent-shaped portion 12
The names b and annular portion 12c are for convenience of explanation, and the movement preventing body 12 is made of metal such as Al or Cu or fluorine-based resin.
第５図は電極４と補助支持板７の位置決め関係
を分解して示すもので、以下、移動防止体１２の
寸法との関係を説明する。 FIG. 5 shows an exploded view of the positioning relationship between the electrode 4 and the auxiliary support plate 7, and the relationship with the dimensions of the movement prevention body 12 will be explained below.
電極４、補助支持板７の外縁には三ケ月状の欠
損部が設けられており、両欠損部の側壁面４ｂ，
７ａは電極４、補助支持板７の中心から等距離の
位置に設けられている。従つて、電極４と補助支
持板７の中心を合わせて重ねた時に欠損部の側壁
面４ｂ，７ａは連続して１個の平面を形成する。
馬蹄形部１２ａの内径は電極の突出部４ｃの円形
外径に一致され、環状部１２ｃの内径は補助支持
板７の円形外形に一致される。従つて、第３図に
示すように、電極４の突出部４ｃに移動防止体１
２を係合させ、更に補助支持板７を移動防止体に
挿入すると、両者の欠損部の側壁４ｂ，７ａが移
動防止体１２の三ケ月状部１２ｂの弦状側壁１２
ｄに当接する。 A crescent-shaped defect is provided at the outer edge of the electrode 4 and the auxiliary support plate 7, and the side wall surfaces 4b of both defects are
7a is provided at a position equidistant from the center of the electrode 4 and the auxiliary support plate 7. Therefore, when the electrode 4 and the auxiliary support plate 7 are stacked with their centers aligned, the side wall surfaces 4b and 7a of the defective portion continuously form one plane.
The inner diameter of the horseshoe-shaped portion 12a matches the circular outer diameter of the protruding portion 4c of the electrode, and the inner diameter of the annular portion 12c matches the circular outer diameter of the auxiliary support plate 7. Therefore, as shown in FIG.
2 and further inserts the auxiliary support plate 7 into the movement prevention body, the side walls 4b, 7a of the defective parts of both of them are connected to the chord-shaped side wall 12 of the crescent-shaped part 12b of the movement prevention body 12.
abuts on d.
従つて、回転防止は三ケ月状部１２ｂの弦状側
壁１２ｄのみによつて行われることになり、はめ
合せ公差の生ずる個所が第１図、第２図に示す従
来例より１ケ所減つており、その分だけ、はめ合
せ公差は小さくなり、一層正確に回転防止が行わ
れる。水平方向の移動防止は馬蹄形部１２ａ、環
状部１２ｃの内径で決まるので、水平方向の位置
合せも正確に行える。 Therefore, rotation is prevented only by the chordal side wall 12d of the crescent-shaped portion 12b, and the number of locations where fitting tolerances occur is reduced by one compared to the conventional example shown in FIGS. 1 and 2. Accordingly, the fitting tolerance becomes smaller and rotation prevention is performed more accurately. Since prevention of movement in the horizontal direction is determined by the inner diameters of the horseshoe-shaped portion 12a and the annular portion 12c, accurate horizontal positioning can also be performed.
尚、第５図における点線は電極４と補助支持板
７の合せ位置関係を示し、一点鎖線は両者の当接
範囲を示している。 In addition, the dotted line in FIG. 5 shows the alignment positional relationship between the electrode 4 and the auxiliary support plate 7, and the one-dot chain line shows the range of contact between the two.
以上述べたように、本発明によれば、電極と半
導体素子を正確に位置合せすることができる。 As described above, according to the present invention, electrodes and semiconductor elements can be accurately aligned.
第１図は従来の半導体装置を示す縦断面図、第
２図は第１図の半導体装置において用いられてい
る移動防止体の斜視図、第３図は本発明の一実施
例を示す半導体装置の縦断面図、第４図は第３図
の半導体装置において用いられている移動防止体
の斜視図、第５図は第３図の半導体装置において
用いられている電極と補助支持板の位置合せ関係
を示す斜視図である。
１…気密容器、２…セラミツク筒、３，４…電
極、５…半導体素子、６…半導体基体、７…補助
支持板、１２…移動防止体。
FIG. 1 is a vertical cross-sectional view showing a conventional semiconductor device, FIG. 2 is a perspective view of a movement preventing body used in the semiconductor device shown in FIG. 1, and FIG. 3 is a semiconductor device showing an embodiment of the present invention. 4 is a perspective view of the movement prevention body used in the semiconductor device shown in FIG. 3, and FIG. 5 is a diagram showing the alignment of the electrode and auxiliary support plate used in the semiconductor device shown in FIG. 3. FIG. 3 is a perspective view showing the relationship. DESCRIPTION OF SYMBOLS 1... Airtight container, 2... Ceramic tube, 3, 4... Electrode, 5... Semiconductor element, 6... Semiconductor base, 7... Auxiliary support plate, 12... Movement prevention body.
Claims (1)
けられて気密容器を構成し、該１対の電極間に半
導体基体と補助支持板が鑞付されて構成された半
導体素子が挾圧される半導体装置において、外形
が円形の補助支持板は一方の電極と接する側に三
ケ月状の欠損部を周縁部に有し、該一方の電極は
補助支持板と接する側に三ケ月状の欠損部を有す
る外形が円形の周縁部を有し、補助支持板の欠損
部の側壁面と一方の電極の欠損部の側壁面は補助
支持板および一方の電極の中心から等距離の位置
にあり、内径が一方の電極の外径に一致する馬蹄
形部、弧状外縁が補助支持板の外縁に一致し側壁
面が補助支持板および突出部の欠損部の側壁面に
一致する三ケ月状部および内径が補助支持板の外
径に一致する環状部からなり馬蹄形部の開放位置
に三ケ月状部の端部が位置し、かつ馬蹄形部およ
び三ケ月状部の外縁に環状部の内縁が位置した移
動防止体によつて補助支持板と電極が係合位置合
せされていることを特徴とする半導体装置。1. A pair of electrodes are provided in the openings at both ends of a ceramic cylinder to constitute an airtight container, and a semiconductor element consisting of a semiconductor substrate and an auxiliary support plate brazed between the pair of electrodes is clamped and pressed. In a semiconductor device, an auxiliary support plate having a circular outer shape has a crescent-shaped defect in the peripheral edge on the side in contact with one electrode, and the one electrode has a crescent-shaped defect in the side in contact with the auxiliary support plate. The side wall surface of the defective part of the auxiliary support plate and the side wall surface of the defective part of one electrode are located at the same distance from the center of the auxiliary support plate and one electrode, and the inner diameter is circular. A horseshoe-shaped part that matches the outer diameter of one electrode, a crescent-shaped part whose arcuate outer edge matches the outer edge of the auxiliary support plate and whose side wall surface matches the auxiliary support plate and the side wall surface of the defective part of the protrusion, and whose inner diameter matches the auxiliary support plate. The end of the crescent-shaped part is located at the open position of the horseshoe-shaped part, and the inner edge of the annular part is located at the outer edge of the horseshoe-shaped part and the crescent-shaped part. A semiconductor device characterized in that a support plate and an electrode are engaged and aligned.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57059682A JPS58176953A (en) | 1982-04-12 | 1982-04-12 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57059682A JPS58176953A (en) | 1982-04-12 | 1982-04-12 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58176953A JPS58176953A (en) | 1983-10-17 |
| JPS6213821B2 true JPS6213821B2 (en) | 1987-03-28 |
Family
ID=13120213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57059682A Granted JPS58176953A (en) | 1982-04-12 | 1982-04-12 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58176953A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766929B2 (en) * | 1987-11-16 | 1995-07-19 | 富士電機株式会社 | Flat semiconductor device |
-
1982
- 1982-04-12 JP JP57059682A patent/JPS58176953A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58176953A (en) | 1983-10-17 |
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