JPS61156768A - Semiconductor device - Google Patents

Abstract

PURPOSE:To make alignment easier by a method wherein rings made of high molecular material are formed of two rings to be assembled together at specified position while one ring and the other ring are provided with projection respectively to be inserted into the recession on the side of holding plate and the side of electrode plate. CONSTITUTION:A groove 17 is made on the side of a circular holding silicon plate 11 within a container while a polyethylene tetrafluoride ring 8 with a projection 81 to be inserted into the groove 17 is fixed to the holding plate 11. Besides, another groove 24 is made on the side of a circular cathode electrode 2 while another polyethylene tetrafluoride ring 9 with another projection 91 to be inserted into the groove 24 is fixed to the holding plate 11. Moreover the rings 8 and 9 may be aligned by means of inserting another projection 92 into a recession 82. In such a constitution, a thyristor element 1 with centrally asymmetrical and complicated electrode shape may be assembled within a shorter time improving the alignment precision.

Description

[Detailed description of the invention] [Technical field to which the invention pertains]

In the present invention, an electrode having an asymmetrical shape with respect to the center point is formed on the surface of a semiconductor element such as a large diameter thyristor or a GTO thyristor, and the electrode shape is also asymmetrical with respect to the center point. The present invention relates to a semiconductor device in which connection electrode plates having a contact electrode plate are in contact with each other.

[Prior art and its problems]

Figure 2 shows a flat thyristor with an amplification gate structure, +
8) In the silicon element 1 shown in the top view in the figure, the lower surface of a circular silicon plate 11 is brazed onto a circular support 112 made of molybdenum or the like, and the upper surface of the silicon plate 11 is made of aluminum 6 mm. An auxiliary cathode electrode 14 similarly made of aluminum and having four protrusions is located at the center of the cathode electrode 13 having a circular circumference.
Further, in the center thereof, there is a circular gate electrode 15 also made of aluminum. On the other hand, the cathode electrode plate 2 shown in the bottom view in the top view has a through hole 21 and a recess 22 having an outline slightly larger than the outline of the protrusion of the auxiliary cathode electrode 14 in the center. When the auxiliary cathode electrode 14 comes into contact with the electrode plate 2, it is short-circuited to the cathode electrode 15, which eliminates the effect of the amplification gate structure.
It is necessary to align and overlap so that 1 and recess 22 are aligned. This positioning is achieved by, for example, as shown in FIG. 3, an anode terminal 4. The element 1 and the cathode electrode plate 2 are connected to a ceramic ring 3 via a thin metal ring 6. When housing the cathode terminal 5 together with the polytetrafluoroethylene ring 30 in a container, the pin 32 is inserted into the pin hole 31 formed in the anode terminal 4 and the pin hole 16 formed in the support plate 12, and the cathode terminal Pin hole 32 formed in 5
This was done by inserting a bottle 34 into a pin hole 23 formed in the cathode electrode 2. Note that a gate spring 36 housed in the through hole 21 together with the insulating ring 35 is brought into contact with the gate electrode 15 . However, the position of the pin hole 16 in the element must be determined each time welding between the silicon plate 11, the metal ring 6 of the child 5, and the metal plate 7 on the ceramic ring 3, which is very time-consuming. Moreover, it is necessary to take great care to prevent positional deviation during welding, and it has the disadvantage that it is not suitable for mass production.

[Purpose of the invention]

The present invention eliminates the above-mentioned drawbacks and improves alignment between an electrode having a centrally asymmetrical shape on the surface of a semiconductor body and a contact electrode plate having a centrally asymmetrical shape, and alignment between a container, a terminal of a container, and an insulator. It is an object of the present invention to provide a semiconductor device that can be precisely aligned without requiring alignment during fixing.

[Key points of the invention]

The present invention surrounds a semiconductor element fixed to a support plate, a connecting electrode plate that contacts the electrodes, and the semiconductor element and the connecting electrode plate in a container consisting of an insulating ring and both metal terminal bodies coupled thereto. In the case where the insulating polymer material ring is housed, the polymer material ring consists of two parts that can be engaged with each other at a predetermined relative position, and one of the parts is attached to the side surface of the semiconductor element support plate after the semiconductor element is fixed. The above object is achieved by having a protrusion inserted into the recess formed in the connecting electrode plate, and the other part having a protrusion inserted into the recess formed on the side surface of the connection electrode plate.

[Embodiments of the invention]

FIG. 1 shows a flat thyristor according to an embodiment of the present invention,
Components common to those in FIG. 3 are given the same reference numerals. An anode terminal 4 connected to the ceramic ring 3 and a metal plate 7 fixed to both end faces thereof via the metal ring 6. Cathode terminal 5
Place the cyrisk element in a container consisting of 1. A groove 17 is machined at both ends of the diameter on the side surface of the circular support plate 11 in which the cathode electrode plate 2 is housed, and a polytetrafluoroethylene ring 8 having a protrusion 81 that fits into the groove is attached. Grooves 24 are machined at both ends of the diameter of the side surface of the circular cathode electrode plate 2, and a polytetrafluoroethylene ring 9 having a protrusion 91 that fits into the groove is attached. 4 and 5 show rings 9 and 8. , the ring 9 has a protrusion 92 on the opposite side of the protrusion 91;
Both rings 8 and 9 are positioned by fitting into a recess 82 formed at the top of a protrusion 81 of ring 8. The assembly of the flat silicon risk shown in FIG.
After brazing with the support plate 12 using aluminum,
Grooves 17 are formed in accordance with the electrode pattern on the surface of the silicon plate 11.
is processed, and a polytetrafluoroethylene ring 8 is attached using a protrusion 81. As a result, if the concave portion 82 of the ring 8 is processed into an electrode pattern on the surface of the silicon plate 11, the protruding portion 92 of the polytetrafluoroethylene ring 9 attached to this electrode plate will correspond to the pattern of the concave portion of the electrode plate 2. Positioned. Therefore, by combining both rings 89 with the recesses 82 and protrusions 92, the pattern of the recesses 22 of the electrode plate 2 can be changed to the auxiliary cathode electrode 1 of the thyrisk element l.
It can be accurately aligned with pattern 4. Since the anode terminal 4- and the cathode terminal 5 are unrelated to this alignment, the metal ring 6- is connected to the insulating ring 3. There is no need for positioning in the circumferential direction when welding with the metal plate 7.

【Effect of the invention】

According to the invention! The insulating polymer material ring is placed between the container and the connecting electrode plate that contacts the semiconductor element in the device and the electrode on its surface. The other part can be positioned and attached with respect to the electrode pattern, the other part can be positioned and attached with respect to the shape of the connecting electrode plate, and the image part can be positioned and combined, making it easy to align each part. It is a reliable process, and no measuring instruments or jigs are required. Therefore, the assembly time of a thyristor with an amplification gate structure having a center-asymmetric and complex electrode shape is halved, and the alignment accuracy is improved from ±0.2fi to ±0.2fi.
We were able to reduce the distance by half to 1 m.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of a flat silice having an amplification gate structure according to an embodiment of the present invention, FIG. 2 shows a silice with an amplification gate structure, and (Ml is a top view of the element, 佽) is a bottom view of a cathode electrode plate. , Fig. 3 is a sectional view of a flat thyristor with a conventional amplification gate structure, Fig. 4 shows one polytetrafluoroethylene ring in an embodiment of the present invention, and Fig. 5 shows the other polytetrafluoroethylene ring. In both cases, tal is a cross-sectional view, and tal is a plan view. l: silice element, 11: silicon plate, 12 support plate, 17: groove, 2: cathode electrode plate, 22: recess,
24: Groove: 3: Ceramic ring, 4 near node terminal, 5:
Cathode terminal, 6: Metal ring, 8, 9: Polytetrafluoroethylene ring, 81: Projection, 82: Recess, 91: Projection, 92
: Protrusion. Figure 4 (b) Figure 75

Claims (1)

[Claims] 1) A semiconductor element fixed to a support plate in a container consisting of an insulating ring and both metal terminal bodies bonded thereto, a connecting electrode plate in contact with an electrode on the surface of the semiconductor element, and the semiconductor element and the connecting electrode. In the case where an insulating polymeric material ring surrounding the plate is accommodated, the polymeric material ring consists of two parts that can be engaged with each other at a predetermined relative position, one of which is attached to the side surface of the semiconductor element support plate. 1. A semiconductor device having a convex portion inserted into a concave portion formed after the element body is fixed, and another portion having a convex portion inserted into a concave portion formed on a side surface of a connection electrode plate.