JPS58176953A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS58176953A JPS58176953A JP57059682A JP5968282A JPS58176953A JP S58176953 A JPS58176953 A JP S58176953A JP 57059682 A JP57059682 A JP 57059682A JP 5968282 A JP5968282 A JP 5968282A JP S58176953 A JPS58176953 A JP S58176953A
- Authority
- JP
- Japan
- Prior art keywords
- support plate
- auxiliary support
- electrode
- crescent
- side wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置に係わり、特に、平温パンケージ内
での半導体素子の位置決め構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and particularly to a structure for positioning a semiconductor element within a normal temperature pancage.
第１図は従来のこの種半導体装置を示しており、１は気
＠谷器で、セラミック筒２の両端開孔部に上側電極３．
下側電極４が気密に設けられている。FIG. 1 shows a conventional semiconductor device of this kind, in which 1 is a device with upper electrodes 3 and 3 in openings at both ends of a ceramic cylinder 2.
A lower electrode 4 is provided in an airtight manner.
３ａ＋４ａは谷電＠３，４の一部をなす弾性体でるる。3a+4a is an elastic body forming a part of Taniden@3 and 4.
５は半導体素子でｐｍｐｍ４層構造の半導体基体６とそ
の下主弐面に鑞住さｎたモリブデンあるいはタングステ
ンの補助支持板７カ・ら構成さｎている。上玉表向には
電極膜８．ゲー１− リード９がＷｉけら扛ている。ゲ
ートリード９はパイプｌＯｔ介して気密容器外へ導出さ
ｒしている。Reference numeral 5 denotes a semiconductor element, which is composed of a semiconductor substrate 6 having a PMPM four-layer structure and an auxiliary support plate 7 made of molybdenum or tungsten which is inlaid on the lower main surface thereof. There is an electrode film 8 on the surface of the upper ball. Game 1 - Lead 9 is in full swing. The gate lead 9 is led out of the airtight container via a pipe lOt.
電Ｉｋ４と補助支持板７．電極３と電＆ＪＩ８は両電極
３．４闇に加えらｎる圧力によって圧接さｎるものでる
り、電極４と補助支持板７は移動防止体１１によって保
合関係を保ち、気密容ＷＮｌ内での自由な移動が規制さ
れている。Electric Ik4 and auxiliary support plate 7. Electrode 3 and JI8 are brought into pressure contact by the pressure applied to both electrodes 3.4, and electrode 4 and auxiliary support plate 7 are kept in a fixed relationship by movement prevention body 11, and are kept in airtight volume WN1. Free movement is restricted.
第２図はこの移動防止体１１ｔ−示しており、内壁は電
極４の外壁に微する円形［１１ｍ、直線面１１ｂと補助
支持板７の外壁に接する円形面１１ｃ直線面１１ｂとか
ら構成されている。電極４．補助支持板７の外壁も、こ
扛ら内壁面１１ａ〜ｌｌｂに相似した形にさ扛、直線面
１ ｌｂ、１１ａにより半導体索子５の回転方向の移動
が規制さｎ１全体で水平方向への移動が規制されている
。FIG. 2 shows this movement prevention body 11t, whose inner wall is a circular surface [11m] slightly extending from the outer wall of the electrode 4, and is composed of a linear surface 11b and a circular surface 11c in contact with the outer wall of the auxiliary support plate 7. There is. Electrode 4. The outer wall of the auxiliary support plate 7 is also shaped similar to the inner wall surfaces 11a to 11b, and the linear surfaces 1lb and 11a restrict the rotational movement of the semiconductor cord 5, and the entire n1 moves in the horizontal direction. Movement is restricted.
従来のこのような構造では厘廖向が２ケ所に分かｎてい
るため、公差が大きくなり、半導体素子５０回転防止が
正確にできない問題がめった。In such a conventional structure, since the direction of rotation is divided into two locations, the tolerance becomes large and there is often a problem that rotation of the semiconductor element 50 cannot be accurately prevented.
従って、本発明の目的は、公差を小さくシ、正確に位置
決めをすることができる半導体装置を提供するにある。Therefore, an object of the present invention is to provide a semiconductor device that can be accurately positioned with small tolerances.
以下、本発明の％黴とするところｔ図面に示す実施例に
着いて説明する。Hereinafter, the details of the present invention will be explained with reference to the embodiments shown in the drawings.
第３図は本発明の一寮施例を示してお９、第１因と同一
符号は同一物あるいは相轟物を示している。FIG. 3 shows a one-dormitory embodiment of the present invention, and the same reference numerals as the first factor indicate the same or similar items.
第４図は本発明において用いらｒる移動防止体１２を示
しており、馬蹄形部１２ａ、三ケ月状部１２ｂ、壌状部
１３ｃｌ−ら購成さｎる。三ケ月状部１２ｂは馬蹄形部
１２ａの端部に位置して、丁度環状部１３ｃの内側には
め合わさ７した形となっている。即ち、馬蹄形９１２ａ
、 三ケ月状部１２ｂ。FIG. 4 shows the movement preventing body 12 used in the present invention, which includes a horseshoe-shaped portion 12a, a crescent-shaped portion 12b, and a loam-shaped portion 13cl. The crescent-shaped portion 12b is located at the end of the horseshoe-shaped portion 12a, and has a shape that fits exactly inside the annular portion 13c. That is, horseshoe shape 912a
, crescentic part 12b.
環状部１２ｃなる呼称は脱明の都合によるものでおり、
移動防止体１２はＡｔ、Ｃｕ等の金属やふっ素糸レシン
で製作さｔている。The name of the annular part 12c is due to the convenience of delighting.
The movement prevention body 12 is made of metal such as At or Cu or fluorocarbon resin.
第５図は電＆４と補助支持板７の位置決めＦ！Ｉａ係を
分解して示すもので、以下、移動防止体１２の寸法との
関係を説明する。Figure 5 shows the positioning of electric &4 and auxiliary support plate 7 F! Section Ia is shown in an exploded manner, and the relationship with the dimensions of the movement prevention body 12 will be explained below.
電＆４．補助支持板７の外縁には三ケ月状の欠損部が設
けらｎており、肉欠慣部の＠壁面４ｂ。Electric & 4. A crescent-shaped cutout is provided on the outer edge of the auxiliary support plate 7, and the cutout part is the wall surface 4b.
７ａは電極４．補助支持板７の中心から等距離の位置に
ｔｉけらｊしている。従って、電極４と補助支持板７の
中心會せわせて１ね次時に欠損部の餉壁面４ｂ、７ａ
ｆｔ１逼絖して１個の平＋ｉｕｔ形成する。7a is the electrode 4. The auxiliary support plate 7 is provided at positions equidistant from the center thereof. Therefore, when the center of the electrode 4 and the auxiliary support plate 7 are aligned, the hooked wall surfaces 4b and 7a of the defective portion are aligned.
Tighten ft1 to form one flat+iut.
馬蹄形部１２ａの内植は電極の突出部４ｃの円形外径に
一紋さＱＳＩＩ状都１２ｃの内径は補助支持板７の円形
外形に一致さｎ４．従って、第３図に示すように、電極
４の突出部４Ｃに移動防止体１２ケ係合させ、更に補助
支持板７を移動防止体に押入すると、両者の欠損部の側
壁４ｂ、７ａ が移動防止体１２の三り°列状１１２
ｂ１７．Ｊ弦状側壁１２ｄに当接する。The inset of the horseshoe-shaped portion 12a matches the circular outer diameter of the protruding portion 4c of the electrode, and the inner diameter of the QSII-shaped portion 12c matches the circular outer diameter of the auxiliary support plate 7.n4. Therefore, as shown in FIG. 3, when the 12 anti-movement bodies are engaged with the protrusion 4C of the electrode 4 and the auxiliary support plate 7 is pushed into the anti-movement bodies, the side walls 4b and 7a of both defective parts move. Three rows 112 of the preventer 12
b17. It abuts against the J-chord side wall 12d.
従って、回転防止は三ケ月状部１２ｂの弦状肯壁１２ｄ
のみによって行わ１しることになり、はめ合せ公差の生
ずる個所が第１図、第２図に示す従来例よシｌケＦ９Ｔ
残っており、その分たけ、はめ合せ公差は小さくなり、
一層正確に回転防止が行わｎる。水平方向の移動防止は
馬蹄形部１２ａｔｌ！状１１２ｃの内径で決するので、
水平方向の位置合せも正確に行える。Therefore, the rotation is prevented by the chordal wall 12d of the crescent-shaped portion 12b.
The parts where fitting tolerances occur are similar to the conventional example shown in Figs. 1 and 2.
There remains, and the fit tolerance becomes smaller accordingly.
Rotation can be prevented more accurately. Horizontal movement is prevented by the horseshoe-shaped part 12atl! Since it is determined by the inner diameter of the shape 112c,
Horizontal alignment can also be performed accurately.
同、第５−にふ・ける点！！１１ｒｉ電極４と補助支持
板７の付せ位ｉｔ関係金示し、一点鎖線は両省の当接範
囲を示している。Same, No. 5 - Points to indulge in! ! The attachment positions of the 11ri electrode 4 and the auxiliary support plate 7 are shown, and the dashed line shows the range of contact between the two parts.
以上述べたように、本発明に１扛ば、電極と半導体素子
を正確に位置合せすることができる。As described above, by applying the present invention, electrodes and semiconductor elements can be accurately aligned.
第１図は従来の半導体装ａｔ示す縦断面図、第２図は第
１図の半導体装置において用いらｎている移動防止体の
斜ｇＬ−１第３図は本発明の一実施例を示す半導体装置
の縦断面図、第４図は第３−の半導体装置において用い
ら扛ている移動防止体の斜視図、第５図は第３図の半導
体装置において用いら【ている電極と補助支持板の位ｔ
ｉＩ［合せ関係を示す斜視図である。FIG. 1 is a vertical cross-sectional view showing a conventional semiconductor device, and FIG. 2 is a diagonal gL-1 diagram of a movement preventing body used in the semiconductor device of FIG. 1. FIG. 3 is a diagram showing an embodiment of the present invention. A vertical cross-sectional view of the semiconductor device, FIG. 4 is a perspective view of a movement preventing body used in the semiconductor device of FIG. 3, and FIG. board position t
iI [FIG. 3 is a perspective view showing the alignment relationship.
Claims (1)
らｎて気密容器會檎戚し、該１対の電極間に半導体基体
と補助支持板か鑞付さｊして慣欣さｒした半導体素子が
挾圧さｎる半導体装置において、外形が円形の補助支持
板は一方の１１Ｌ憔と撤する側に三ケ月状の欠損ｓｔ周
縁部に有し、該一方の電極は補助支持板と接する側に三
ケ月状の欠損部紫有する外形が円形の周縁部を有し、補
助支持板の欠損部の側壁面と一方の電極の欠損部の＠壁
面は補助支持板および一方の電極の中心から等距離の位
置にめり、内径が一方の１１Ｌ憔の外径に一部する馬蹄
形部、弧状外縁が補助支持板の外縁に一致し＠壁面が補
助支持板および失出部の欠損部の側壁（２）に一致する
三ケ月状部および内径が補助支持板の外径に一部する壊
状部からなり馬蹄形部の開放位置に三ケ月状部の端部が
位置し、かつ馬蹄形部お工ひ三ケ月状部の外縁に猿状部
の内縁が位置し几移動防止体によって補助支持板と電極
が保合位置合ゼされていること′ｇｔ特黴軽微る半導体
装置。1. A pair of screws are provided in the openings at both ends of the ceramic cylinder to form an airtight container, and a semiconductor substrate and an auxiliary support plate are soldered between the pair of electrodes, as is customary. In a semiconductor device in which a semiconductor element is clamped, an auxiliary support plate having a circular outer shape is provided at the periphery of a crescent-shaped defect on one side of the 11L edge, and the one electrode is attached to the auxiliary support plate. The crescent-shaped defect on the side in contact with the plate has a purple outer shape with a circular peripheral edge, and the side wall surface of the defective portion of the auxiliary support plate and the @wall surface of the defective portion of one electrode are the same as those of the auxiliary support plate and one electrode. A horseshoe-shaped part that is equidistant from the center and whose inner diameter is part of the outer diameter of one 11L cut, whose arcuate outer edge coincides with the outer edge of the auxiliary support plate, and whose wall surface is the missing part of the auxiliary support plate and the missing part. It consists of a crescent-shaped part that coincides with the side wall (2) of the auxiliary support plate, and a broken part whose inner diameter is a part of the outer diameter of the auxiliary support plate. The inner edge of the monkey-shaped part is located on the outer edge of the crescent-shaped part, and the auxiliary support plate and the electrode are brought into engagement position by means of a movement prevention member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57059682A JPS58176953A (en) | 1982-04-12 | 1982-04-12 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57059682A JPS58176953A (en) | 1982-04-12 | 1982-04-12 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58176953A true JPS58176953A (en) | 1983-10-17 |
| JPS6213821B2 JPS6213821B2 (en) | 1987-03-28 |
Family
ID=13120213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57059682A Granted JPS58176953A (en) | 1982-04-12 | 1982-04-12 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58176953A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01129423A (en) * | 1987-11-16 | 1989-05-22 | Fuji Electric Co Ltd | Flat semiconductor device |
-
1982
- 1982-04-12 JP JP57059682A patent/JPS58176953A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01129423A (en) * | 1987-11-16 | 1989-05-22 | Fuji Electric Co Ltd | Flat semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6213821B2 (en) | 1987-03-28 |
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