JPS59219962A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent a short circuit between a gate electrode and a cathode electrode and the positional displacement of a semiconductor element by fixing a contact electrode plate, to which an escaping section, such as a groove or a through-hole or the like is formed, to the element. CONSTITUTION:The escaping section 20 of a groove, which is slightly larger than a gate electrode 2 and has a shape of the same contour as the gate electrode 2, is formed at a position opposite to the gate electrode 2 of a contact electrode plate 6, and a pin 21 fitted to a conductive electrode 8 shaping one part of a vessel and the contact electrode plate 6 and a pin 22 inserted to a conductive electrode 16 and a semiconductor support plate 5 are mounted. The contact electrode plate and a semiconductor element can continuously keep the predetermined relationship of relative positions, through which a short circuit is not generated, accurately, and the stable state of operation is obtained at all times.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical field to which the invention pertains] The present invention relates to an assembly structure of a semiconductor device having a complex-shaped gate Tt pole, such as a high-speed silice.

[Prior art and its problems]

FIG. 1 is a plan view showing the surface shape of the high-speed silice element, and FIG. 2 is an enlarged cross-sectional view taken along the line AA in FIG. 1. In FIGS. 1 and 2, a semiconductor substrate 1 has multiple layers on its main surface. It is equipped with a gate electrode 2 having an f8 shape and a cathode electrode 3, and in order for such a high-speed thyristor element to maintain normal operation, the gate electrode 2 and cathode electrode 3 are not permanently short-circuited. Therefore, both electrodes are usually placed separately. 4 is a first stage gate electrode.

FIG. 3 shows a sectional view of a flat type high-speed SIRIS device in which a semiconductor element having such a semiconductor substrate is sealed in a container, and the same reference numerals as in FIGS. 1 and 2 represent the same names.

As shown in FIG. 3, a semiconductor substrate 1 is fixed to a support plate 5 made of molybdenum or tungsten to constitute a semiconductor element, and a cathode electrode 3 on the semiconductor substrate 1 has a smooth surface. A contact electrode plate 6 made of a conductive metal such as molybdenum is brought into contact. As shown in FIGS. 2 and 3, means for arranging the gate electrode 2 and the cathode electrode 3 so as not to cause an electrical short termination can be seen in FIGS. 2 and 3, for example, by making the main surface of the silicon substrate 1 have an uneven surface. Steps are formed by etching using chemicals or the like, and gate electrodes 2 made of an aluminum vapor deposited film are provided on the four parts of the silicon substrate 1, and cathode electrodes 3 made of an aluminum vapor deposited film are provided on the outermost main surface of the silicon substrate 1. This is done by Due to the height difference between the uneven surfaces provided on the main surface of the silicon substrate 1 in this way,
A spatial insulation portion is formed between the gate electrode 2 and the contact electrode plate 6, and the gate electrode 2 is kept in a state of insulation from the cathode electrode 3 which is in contact with the contact electrode plate 6.

To explain the assembly procedure of the flat semiconductor device in FIG. The passed gate lead wire 12 is placed on the silicon substrate 1 at a location where its tip should come into contact with the first stage gate electrode 4, and the other end of the gate lead wire 12 is inserted into the tube 13 passing through the insulating ring 9. , and the tube 13 is crushed at the end and sealed integrally. Next, the example is Teflon space ring 14.
is inserted into the container, but a notch is made in the space ring 14 at the point where it intersects with the lead wire 12 to prevent the lead wire 12 from becoming a wire. Thereafter, a semiconductor element consisting of a contact electrode plate 6, a silicon substrate 1 whose main surface has been roughened in advance as shown in FIG. 2, and a support plate 5 is arranged as shown in FIG. 3, and finally a container tray is formed. An electrode 16 having a flange 15 is placed on top of the semi-quartet element, and this flange 15 and a flange 17 provided on the insulating ring 9 are edge arc welded around the entire circumference of the container to assemble this flat semiconductor device. Complete.

However, since it has such a structure,
This flat semiconductor device inevitably has the following drawbacks.

One of them is that the depth of the recess formed on the main surface of the silicon substrate 1 must be controlled to 0.02±0.01 m, which is difficult to process. FIG. 4 is an enlarged sectional view showing the relationship between the gate electrode 2, the cathode' electrode 3, and the contact electrode plate 6 of the silicon substrate 1 whose main surface is roughened according to the symbols in FIGS. 1 to 3. However, for example, if the processing depth of the recess on the main surface of the silicon substrate 1 is too shallow than the specified dimension, the gate electrode 2 may be damaged due to poor precision of the photomask, as shown in FIG. A protrusion 18 is formed, and this protrusion 18 comes into contact with the contact plate 6, and as a result, the gate electrode 2
This results in an electrical short circuit between the electrode 3 and the cathode electrode 3. Further, FIG. 5 shows a cross-sectional view similar to FIG. 4, but in this case, for example, foreign matter 19 such as metal particles got into the recess provided on the main surface of the silicon substrate 1 during the manufacturing process. Then, the gate electrode 2 is connected via this conductive foreign material 19.
This indicates that the contact electrode plate 6 comes into contact with the contact electrode plate 6, causing a short circuit between the gate and cathode electrodes.

The second drawback is that in the structure of the flat thyristor shown in FIG. 3, the contact electrode plate 6 is brought into pressure contact only after the semiconductor element is housed in the container, and the semiconductor element is also pressed against the contact electrode plate 6.
Since the electrodes are not always restrained, the cathode electrode of the flat type SIRISK can be removed if foreign matter gets mixed in due to rotation of the semiconductor element sealed in the container during handling, as shown in Figure 5. There is a risk of damage.

[Purpose of the invention]

An object of the present invention is to eliminate the above-mentioned drawbacks, and to provide a semiconductor device in which the gate electrode and the cathode do not cause short circuits through the contact-type quarter plate, and also prevent misalignment of the semiconductor element. be.

[Key points of the invention]

The present invention is a manufactured semiconductor device in which a contact electrode plate provided with a relief portion such as a groove or a through hole is identified as a semiconductor element.

[Embodiments of the invention]

The present invention will be explained below based on examples.

FIG. 6 shows a cross-sectional view of a flat y5+H,B speed iris device according to the present invention. In FIG. 6, the same reference numerals as in FIGS. 1 to 5 represent the same names. The difference between FIG. 6 and FIG. 3 is that the main surface of the silicon substrate 1 is not roughened, and the contact electrode plate 6 is designed to prevent the gate electrode 2 and the contact electrode plate 6 from coming into contact with each other easily. A groove escape part 20 having the same outline shape and slightly thicker than the gate 'rlT electrode 2 is provided at a location facing the gate electrode 2 of the conductive electrode 8 forming a part of the container. A pin 21 is fitted into the contact electrode plate 6 and a pin 22 is fitted into the conductive plate 4 and the semiconductor support plate 5.

The A4 installation procedure for the flat high-speed cyrisk shown in Figure 6 is as follows. The process is exactly the same as that shown in FIG. 3 until first, the spring member 10 and the insulating member 11 are attached to the container, as well as the gate lead wire 12 to 'l'\'13.

In this embodiment, the contact piece 1 has a grooved relief part 20 formed on the main surface of the silicon base IFj, 1 at a location facing the cage 2; After 7 years of correct alignment with the semiconductor element, Space Ring 14
By press-fitting the half-two gamma body elements and the contact electrode plate 6, Fix the two together using a surface, and insert the combined product into a container. At that time, a pin 21 is embedded in the electrode 4 8, and at the same time, the pin 21 is aligned with the pin hole provided in the contact electrode plate 6, and the notch of the space ring 14 and the mounting are first made. This is done while aligning the gates 11 and 12. Finally, insert the pin 22 into the semiconductor support plate 5, align the pin hole provided in the electrode 16 with the flange 15 with the pin 22, cover the electrode 16, and connect the flange 15 and the flange 17 of the Zettai Garlic 9. By performing edge arc welding around the entire circumference, the assembly of the flat type high-speed silisk device f of this embodiment is completed.

FIG. 7 shows a different example; only the structure of the semiconductor element and the contact plate (coated plate) is shown.

The same numbers as in FIGS. 1 to 6 are represented by the same names.

In FIG. 7, a relief portion 20 is provided at a position facing the gate electrode 2 of the contact electrode plate 6 to prevent a short circuit with the cathode electrode 3.
Instead of providing a groove, a through hole is used, and the contact electrode plate 6 and the semiconductor element are fixed by using silicone rubber 2, for example, on the side surface of the contact electrode plate 6 and the outer edge of the semiconductor element, without using pins.
3, etc., to make it a single piece.

Similarly, FIG. 8 also shows only the configuration of the semiconductor element and the contact electrode plate, and in this case, the relief part 2 of the contact electrode plate 6 is also shown.
0 is a through hole, but the difference from FIG. 7 is that the contact field board 6 and the semiconductor element are fixed by brazing with a brazing material 24 on the joint surface of the two. Yes, but
Instead of brazing filler metal: A pressure welding material such as I4 may be used to secure the parts by pressure welding.

In addition, in FIGS. 7 and 8, it goes without saying that the relief portion 20 may be formed into a groove shape as shown in FIG. 6 instead of being a through hole. The assembly of the semiconductor device shown in FIG. 7 and FIG.
(You can follow 'i, but it is not necessary to use a fixing pin.

〔Effect of the invention〕

As explained above, according to the present invention, it is no longer necessary to provide a recess on the main surface of a silicon substrate, which is extremely time-consuming and troublesome, and whose depth is difficult to control, and to arrange a gate electrode. The semiconductor device can be operated stably for a long period of time without short circuits occurring between the semiconductor devices.

This effect is achieved because the contact electrode plate is provided with a relief part at a position facing the gate electrode to prevent short circuits between the gate and cathode electrodes, and the positional relationship between the gate electrode and the contact electrode plate is If the relative position (H) cannot be maintained for some reason, the problem of short circuit will occur again.The most likely cause of this problem is In contrast to the rotation of the contact electrode plate and the semiconductor element during subsequent handling, in the apparatus of the present invention, the contact electrode plate and the semiconductor element are fixed together using a pin or a fixing body. Therefore, it is impossible for these to rotate independently in any case.In other words, the contact electrode plate and the semiconductor element can accurately maintain a constant relative positional relationship that does not cause short circuits. , this semiconductor device can always be in a stable operating state.

On the other hand, in order to prevent the semiconductor element from rotating, it is possible to make the contact electrode plate considerably thicker or to provide a separate reinforcing plate in order to achieve a weight effect, but this not only increases the material cost but also reduces the characteristics. Also electrical.

In contrast, in the present invention, the contact ε and the electrode plate thickness of about 0.1 to 1 mm can effectively achieve the purpose.

As described above, the semiconductor device of the present invention solves the problems of short-circuiting of electrical elements and rotation of elements during handling, and has great effects especially when used as a flat semiconductor device. It will be done.

[Brief explanation of drawings]

Figure 1 is a plan view showing the electrode arrangement of a high-speed Zyristor element;
2 is an enlarged partial sectional view, FIG. 143 is a sectional view of a conventional flat semiconductor device, FIGS. 4 and 5 are enlarged partial sectional views showing the state of intertwining of electrodes, and FIG. 7 and 8 are enlarged partial sectional views showing fixing of a semiconductor element and a contact electrodeposition plate in an embodiment different from that shown in FIG. 6. 1...Silicon substrate, 2...Gate type single pole, 3...
- Cathode electrode, 5... Support plate, 6... Connection electrode plate, 20... Relief part, 21.22... Pin, 23...
- Insulating material, 24... brazing material. Figure 1 Figure 2 Figure 3 Figure 4 @Figure 5

Claims (1)

[Claims] 1) In a semiconductor substrate having a first electrode layer connected to a contact electrode plate and a second electrode layer not connected to the contact electrode plate on the main surface of the semiconductor substrate, the contact electrode plate is , a contact surface in contact with the first electrode layer. A relief portion from the contact surface is provided at a location facing the second electrode layer and has a slightly larger outline than the second electrode layer, and the relative position with respect to the semiconductor substrate is fixed. semiconductor devices. 2. A semiconductor device according to claim 1, wherein the semiconductor element and the contact electrode plate are each fixed to the container by pins, thereby fixing their relative positions. 3) A semiconductor device according to claim 1, wherein the semiconductor element and the contact electrode plate are fixed to each other by an insulating material, so that their relative positions are fixed. 4) A semiconductor device according to claim 1, wherein the semiconductor element and the contact electrode plate are fixed to each other by soldering or pressure welding, thereby fixing their relative positions.