JPS603155A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent a short circuit between gate and cathode electrodes and a positional displacement between an element and a contact electrode plate by bonding a relieving section from the gate electrode and the contact electrode plate, to one part of an outer circumference thereof a projection is formed, with a semiconductor substrate with the electrodes by a projecting section. CONSTITUTION:The main surface of an Si substrate 1 is not machined in an irregular manner, and a through-hole 20 (or a groove), which is slightly larger than a gate electrode 2 and has the same contour as the gate electrode, is formed where a contact electrode plate 6 being in contact with a cathode electrode 3 is opposed to the gate electrode 2. A plurality of projections 22 are formed to the outer circumference of the contact plate 6, and a detaining section 24 for adhesives 23 is shaped on the whole circumference in the vicinity of the inside of the projections. The detaining section 24 is made larger than the outer diameter of an electrode 8. According to the constitution, a positional displacement between a semiconductor element and the contact electrode plate and the accidents of short circuits by the contact plate 6 of the gate electrode and the cathode electrode are not generated by the projecting sections 22, the permeation of adhesives 23 is prevented by the detaining section 24, an effective electrode area is not obstructed, and a device having high reliability is obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field to Which the Invention Pertains] The present invention relates to an assembly structure of a semiconductor device having a complex-shaped gate electrode, such as a high-speed Zyristor.

[Prior art and its problems]

FIG. 1 is a plan view showing the surface shape of a high-speed Zyristor element, and FIG. 2 is an enlarged sectional view taken along the line AA in FIG. 1, in which main parts are shaded.

In FIGS. 1 and 2, a semiconductor substrate 1 has a complex-shaped gate electrode 2 and a cathode electrode 3 on its main surface.
In order to maintain normal operation of such a high-speed Zyristor resistor, the gate electrode 2 and the tunnel electrode 3 are usually arranged separately from each other so that they are not permanently short-circuited. It is. 4 is a first stage gate electrode. A flat-type high-speed Zyristor device in which a semiconductor element having such a semiconductor substrate is sealed in a container (a top view is shown in FIG. 3, but the same symbols as in FIGS. 1 and 2 are the same names as in Table 1')
are doing. As shown in FIG. 3, the semiconductor substrate 1 is fixed to a support plate 5 made of molybdenum or tungsten to form a semiconductor element, and the cathode electrode 3 of the semi-structured substrate 1 has a smooth surface. A contact electrode plate 6 made of a conductive metal 1 such as molybdenum is abutted. The means for arranging the gate electrode 2 and the cathode electrode 3 so that no electrical short circuit occurs can be found in FIGS. A gate electrode 2 made of an aluminum vapor-deposited film is formed on the four parts of the silicon substrate 1 by etching to form a step.
This is accomplished by providing a cathode electrode 3 made of an aluminum vapor-deposited film on the outermost main surface of the silicon substrate 1.

In this way, due to the difference in height of the uneven surface provided on the main surface of the silicon substrate 1, a space insulation part is created between the gate electrode &2 and the contact electrode plate 6, and the gate electrode 2 comes into contact with the contact electrode plate 6. An electrically insulated state from the cathode electrode 3 is maintained.

To explain the assembly procedure of the flat semiconductor device shown in FIG.
The spring member 1o and the insulating member 11, as well as the gate lead wire 12 passed through them, are placed in a container consisting of a spring member 1o, an insulating member 11, and a gate lead wire 12 at a location where the tip thereof is to be in contact with the first stage gate electrode 4 of the silicon substrate 1. The other end of the lead wire 12 is inserted into a tube 13 passing through the mulberry ring 9, and the ends are crushed together with the tube 13 to seal them together. Next, a space ring 14 made of, for example, Teflon is inserted into the container.
A cut is made at the point where the lead wire 12 intersects so that the lead wire 12 does not get in the way. Thereafter, a semiconductor element consisting of a contact 1L electrode plate 6, a silicon substrate J whose main surface has been previously processed to have irregularities as shown in FIG. 2, and a support plate 5 is arranged as shown in FIG. 3, and finally the container is An electrode 16 having a flange 15 to be attached is attached to the -EK side of a semiconductor element,
The flange 15 and the flange 17 provided on the insulating ring 9 are edge arc welded around the entire circumference of the container to complete the assembly of this flat semiconductor device.

However, due to the spiral structure described above,
This flat semiconductor device inevitably has the following drawbacks.

One of the problems is that the depth dimension of the recess formed on the main surface of the silicon substrate 1 must be controlled to 0.02±001, which is difficult in processing. 4th diagram An enlarged diagram showing the relationship between the gate electrode 2 and the cathode electrode 3 of the silicon substrate 1 whose main surface is roughened according to the symbols in FIGS. 1 to 3, and the electrode plate 6. If the cross section is 1 or, for example, if the machining depth of the recess on the main surface of the silicon substrate 1 is too deep than the specified dimension, i'r4
As shown in the figure, if a protrusion 18 is formed on the gate electrode 2 due to the precision of the photomask, this protrusion 18 will come into contact with the contact electrode plate 6, and the result will be an accident. This leads to an electrical short circuit between the gate electrode 2 and the cathode electrode 3. Figure 5 ← 1 This is a cross-sectional view similar to Figure 4, but in this case, it is assumed that foreign matter such as fine metal particles was deposited in the recess formed on the main surface of the V-silicon substrate 1 during the manufacturing process. Due to the contamination of 19, a foreign substance 19 with conductivity of
This indicates that the contact between the gate electrode 2 and the bar plate 6 causes a force to be entangled between the gate and cathode electrodes.

The second drawback is that in the flat structure of the flat Zyristor shown in FIG. Since neither the element nor the contact electrode plate 6 is always restrained, such a flat silicon risk is caused by the rotational force of the semiconductor element sealed in the container or the contact electrode plate 6 during handling, causing the cathode electrode film to 3 is not only scratched and damaged, but also may cause a short circuit between the gate and cathode electrodes.

[Purpose of the invention]

An object of the present invention is to eliminate the above-mentioned drawbacks, and to provide a semiconductor device in which a gate electrode and a cathode electrode do not create a smoke path through a contact electrode plate, and in which misalignment between a semiconductor element and a contact electrode plate is prevented. It's about doing.

[Key points of the invention]

The semiconductor device of the present invention has a semiconductor substrate in which both a gate electrode and a cathode electrode are arranged without providing any unevenness on the main surface, and a relief portion from the groove such as a through hole or a vortex; A contact electrode plate with a protrusion on a part of its outer periphery is attached to the semiconductor element using adhesive at the protrusion, thereby aligning the relative positions of the contact electrode plate and the semiconductor element. It is.

[Embodiments of the invention]

The present invention will be explained below based on examples.

The apparatus of the present invention and its assembly procedure are shown in FIG.

Since t and t are the same, the 4K rff emitted from zero
Only the connection part B will be described. The J force of the semiconductor device of the present invention is different from that shown in FIG. Contact tb plug plate 6
These are the shape of the contact electrode plate 6 and the fixing structure of the contact electrode plate 6 to the silicon substrate 1. To describe these points in detail using the same symbols and names as in FIGS. 1 to 5, as shown in FIG. In order to prevent a short circuit between the gate and cathode electrodes without any processing, the cathode ♂41.
A through hole 20 having the same outline shape, which is slightly larger than the gate electrode 2, is provided at a portion of the contact electrode plate 6 that contacts the pole 3 and faces the gate electrode 2, or in place of the through hole 20, It is necessary to provide grooves 21 as shown in FIG. In order to avoid the contact electrode plate 6 from coming into contact with the gate electrode 2, by providing relief parts such as through holes 20 and grooves 21 on the side of the contact electrode plate 6, the silicon substrate 1 It is no longer necessary to arrange the gate Tt
lj2] Since the size of each relief section can be set to 0.1 to 0.5 M, this value is determined by the height M002 of the unevenness provided on the main surface of the silicon substrate 1, which has been considered a conventional drawback.
-to, o It is much larger than the gate button 1, and even if the gate electrode 2 is contaminated with the protrusion 18 shown in FIG. 4 or the foreign matter 19 shown in FIG. Dimensions (sufficient for the 1.02 system, i.e. game) Since the TIN 2 and the contact electrode plate 6 do not come into direct contact, the gate electrode 2 and the cathode electrode 3 are connected via the contact electrode plate 6. This eliminates the phenomenon of short circuits.

However, this is only the case where the semiconductor substrate 1 and the 4iH contact electrode plate 6 are always maintained in the correct position and aligned, and as mentioned above, the relative positions of the semiconductor substrate 1 and the contact electrode plate 6 are different from each other. If it is misaligned due to rotation, etc., the rotation may generate abrasion powder of the cathode electrode, which may cause a short circuit. Therefore, it is necessary to fix the semiconductor substrate 1 and the contact electrode plate 6 and to provide a mechanism to prevent them from rotating.

FIG. 8 is a plan view of a contact electrode plate 6 having a through hole 20 used in the present invention, with an 8. Several protrusions 22 are provided. FIG. 9 is a 1:IX enlarged cross-sectional view showing this contact electrode plate fixed to the silicon substrate 1 using an adhesive 23 such as silicone rubber. As shown in FIG.
Since the contact electrode plate 6, the silicon substrate 1, and the semiconductor element consisting of the support &5 are properly aligned relative to each other, they will not move independently due to their fixation. If only the contact WiIIIO2 semiconductor element is to be fixed, the outer diameter of the contact electrode plate may be increased and the space between the outer edge and the silicon substrate is fixed with adhesive 23, but the contact electrode plate 6 Alternatively, in order to reliably prevent rotation against the rotational force of the semiconductor element, a plurality of protrusions 22 are provided as shown in FIG. 8, and their side surfaces are utilized. Note that the protrusion 22 is 4 in the example shown in FIG.
Although it is provided at several locations, if the number of the protrusions is increased, the rotation can be prevented even more strongly, and the width of the protrusion 22 can also be set arbitrarily, but these things are as follows.
It may be determined according to the actual situation when using this semiconductor device. An example of this is a case where several small protrusions are collected and placed in several locations as shown in FIG.

However, if such a contact electrode plate 6 is used as a silicon plate 1,
9, the adhesive 23 flows into the minute gap existing between the contact plate 6 and the cathode electrode 3 by capillary action, and the contact 'r43 ．． This may damage the electrical contact between the electrode plate 6 and the silicon substrate 1. In order to prevent this, for example, as shown in FIG. (Due to the shape, as shown in FIG. 12, a retention portion 24 for the adhesive 23 is provided around the entire circumference near the inside of the protrusion 220.

The contact 1 has a protrusion 22 with a retention portion 24 for the adhesive 23 (the five-electrode plate 6 is attached to a semiconductor element), and also includes a rib coil 38 and a lower electrode 16. In a pressurized contact flat semiconductor element, an adhesive is provided on the electrodes 8 and 1G so that the outer diameter is smaller than that of the cathode electrode 3 so that the pressurizing force is evenly transmitted and there is no one-sided push. The position of the retention portion 24 of 23 must be at least larger than the outer diameter of the FLL pin 8 and within a smaller range than the outer diameter of the contact electrode plate 6. In this way, the tangent angle is J7. When the Lt electrode plate and the silicon substrate 1 are firmly separated with the adhesive 23, even if the adhesive 1] 23 penetrates inside, it will be caught in the retention part 24, so the effective luminescence of the cathode electrode @3 will be reduced. , up to the pole area m: does not impair the gas contact state and does not affect the electrical performance of this semiconductor device.

〔Effect of the invention〕

As explained above, according to the present invention, it is no longer necessary to provide a recess on the main surface of the silicon substrate, which is extremely complicated and difficult to precisely define the depth, and to arrange the gate electrode. The semiconductor device can be operated stably for a long period of time without short circuits occurring between the gate electrode, the cathode electrode, and the cathode electrode.

This effect can be obtained at the position opposite to the gate 'iE+ and the center, and when both the gate and cathode 'iE+ are connected to the contact electrode plate.
l'i: A relief part is provided to prevent short circuit between the poles,
This is because the gate electrode and the contact electrode plate are properly rubbed together, but if this relative positional relationship cannot be maintained for some reason, a short circuit problem will occur. In contrast, the device of the present invention? At (dl), a plurality of protrusions are provided on the outer periphery of the contact electrode plate, and the protrusions and the semiconductor substrate are brought into contact with f'J,'l! Since the lli surface portion of the protrusion having the thickness of the 711 electrode plate is fixed with any adhesive such as silicone rubber, movement of the contact electrode plate and the semiconductor element including the direction of rotation can be prevented. In addition, when applying adhesive to the contact electrode plate, there is a possibility that it may penetrate into the gap between the contact electrode plate and the silicon plate, impairing the conductivity of the semiconductor element. An adhesive retention portion is provided to prevent the adhesive from penetrating any further, and the characteristics of this semiconductor device are maintained without reducing the effective electrode area.

[Brief explanation of the drawing]

Fig. 1 is a plan view showing the market price distribution f+I< of a high-speed Zyristor element, Fig. 2 is a partially enlarged sectional view of the same, and Fig. 3 is a conventional flat type semi-circular sectional view. Figures 4 and 5 are partially enlarged cross-sectional views showing the short-circuited state of the electrodes, and Figures 6 and 7 show the first structure of the present invention. 8, 10, *! 11, and 12 are rectangular J views showing the shape of the contact electrode plate according to the present invention, and FIGS. 9 and 13 are the contact electrodes of the present invention. It is a partially enlarged cross-sectional view showing the fixed state of the plate and the half-layer substrate. 1...Silicon substrate, 2...Gate electric current fully returned, 3...Cathode Electrode, 5...Support plate, 6...River/contact M+box electrode plate, 20...Through hole, 21...Groove, 22...Curved protrusion, 23・・・
...Adhesive, 24...Adhesive retention part. 71 Figure 1 22 Figure 5 Port 6 Port 77 Figure 78 Figure f9 Figure i10 Figure 771 Figure 12 Figure 713 Figure 228-

Claims (1)

[Scope of Claims] 1) In a semiconductor substrate having a first electrode layer connected to a contact electrode plate and a second electrode layer not connected to the contact electrode plate on the main surface of the semiconductor substrate, the contact electrode plate includes: a contact surface that contacts the first electrode layer; a relief portion from the contact surface that is provided at a location facing the second electrode layer and has a slightly larger outline than the second electrode layer; and an outer peripheral side surface. a protrusion provided at a plurality of locations, and a side surface of the protrusion and the semiconductor substrate are fixed to each other with an adhesive, thereby fixing a relative position with respect to the semiconductor substrate. Device. 2. A semiconductor device according to claim 1, characterized in that an adhesive retention portion is provided near the outer periphery of the contact electrode plate or on the protrusion.