JPS62135452U - - Google Patents
Info
- Publication number
- JPS62135452U JPS62135452U JP2392886U JP2392886U JPS62135452U JP S62135452 U JPS62135452 U JP S62135452U JP 2392886 U JP2392886 U JP 2392886U JP 2392886 U JP2392886 U JP 2392886U JP S62135452 U JPS62135452 U JP S62135452U
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- oxide film
- film
- gate oxide
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
Description
第１図は本案品の断面構造図、第２図は従来品
の断面構造図である。
１……シリコン基板、２……ソース、３……ド
レイン、４……ゲート酸化膜、５，６……モリブ
デン膜、５ａ，６ａ……モリブデン酸化膜、５ａ
，６ｂ……モリブデン膜、７……絶縁膜、８ａ，
８ｂ，８ｃ……コンタクトホール、９……コント
ロールゲート、１０ａ，１０ｂ，１０ｃ……コン
タクト部材。
FIG. 1 is a cross-sectional structural diagram of the proposed product, and FIG. 2 is a cross-sectional structural diagram of the conventional product. DESCRIPTION OF SYMBOLS 1... Silicon substrate, 2... Source, 3... Drain, 4... Gate oxide film, 5, 6... Molybdenum film, 5a, 6a... Molybdenum oxide film, 5a
, 6b... Molybdenum film, 7... Insulating film, 8a,
8b, 8c...Contact hole, 9...Control gate, 10a, 10b, 10c...Contact member.
Claims (1)
ン膜のフローテイングゲートを備えた不揮発性メ
モリにおいて、前記モリブデン膜とゲート酸化膜
との間にのみモリブデン酸化膜を形成したことを
特徴とする不揮発性半導体メモリ。 A nonvolatile memory comprising a floating gate of a molybdenum film on a gate oxide film on a main surface of a silicon substrate, characterized in that a molybdenum oxide film is formed only between the molybdenum film and the gate oxide film. memory.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2392886U JPS62135452U (en) | 1986-02-20 | 1986-02-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2392886U JPS62135452U (en) | 1986-02-20 | 1986-02-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62135452U true JPS62135452U (en) | 1987-08-26 |
Family
ID=30822688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2392886U Pending JPS62135452U (en) | 1986-02-20 | 1986-02-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62135452U (en) |
-
1986
- 1986-02-20 JP JP2392886U patent/JPS62135452U/ja active Pending
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