JPS6212671B2 - - Google Patents
Info
- Publication number
- JPS6212671B2 JPS6212671B2 JP55177019A JP17701980A JPS6212671B2 JP S6212671 B2 JPS6212671 B2 JP S6212671B2 JP 55177019 A JP55177019 A JP 55177019A JP 17701980 A JP17701980 A JP 17701980A JP S6212671 B2 JPS6212671 B2 JP S6212671B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- transparent
- tin oxide
- silicon
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 15
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 13
- 229910001887 tin oxide Inorganic materials 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- FUWMBNHWYXZLJA-UHFFFAOYSA-N [Si+4].[O-2].[Ti+4].[O-2].[O-2].[O-2] Chemical compound [Si+4].[O-2].[Ti+4].[O-2].[O-2].[O-2] FUWMBNHWYXZLJA-UHFFFAOYSA-N 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Liquid Crystal (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55177019A JPS57100766A (en) | 1980-12-15 | 1980-12-15 | Thin film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55177019A JPS57100766A (en) | 1980-12-15 | 1980-12-15 | Thin film transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57100766A JPS57100766A (en) | 1982-06-23 |
| JPS6212671B2 true JPS6212671B2 (en, 2012) | 1987-03-19 |
Family
ID=16023730
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55177019A Granted JPS57100766A (en) | 1980-12-15 | 1980-12-15 | Thin film transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57100766A (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5965882A (ja) * | 1982-10-06 | 1984-04-14 | ホシデン株式会社 | 液晶表示器 |
-
1980
- 1980-12-15 JP JP55177019A patent/JPS57100766A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57100766A (en) | 1982-06-23 |
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