JPS6211793B2 - - Google Patents

Info

Publication number
JPS6211793B2
JPS6211793B2 JP56178287A JP17828781A JPS6211793B2 JP S6211793 B2 JPS6211793 B2 JP S6211793B2 JP 56178287 A JP56178287 A JP 56178287A JP 17828781 A JP17828781 A JP 17828781A JP S6211793 B2 JPS6211793 B2 JP S6211793B2
Authority
JP
Japan
Prior art keywords
layer
ohmic contact
electrode
alloy
diffusion barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56178287A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5880872A (ja
Inventor
Shuichi Kanamori
Yoshiki Wada
Tadashi Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56178287A priority Critical patent/JPS5880872A/ja
Publication of JPS5880872A publication Critical patent/JPS5880872A/ja
Publication of JPS6211793B2 publication Critical patent/JPS6211793B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP56178287A 1981-11-09 1981-11-09 半導体装置 Granted JPS5880872A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56178287A JPS5880872A (ja) 1981-11-09 1981-11-09 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56178287A JPS5880872A (ja) 1981-11-09 1981-11-09 半導体装置

Publications (2)

Publication Number Publication Date
JPS5880872A JPS5880872A (ja) 1983-05-16
JPS6211793B2 true JPS6211793B2 (cs) 1987-03-14

Family

ID=16045824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56178287A Granted JPS5880872A (ja) 1981-11-09 1981-11-09 半導体装置

Country Status (1)

Country Link
JP (1) JPS5880872A (cs)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60120560A (ja) * 1983-12-05 1985-06-28 Fujitsu Ltd 半導体装置
JPS60242619A (ja) * 1984-05-16 1985-12-02 Nippon Telegr & Teleph Corp <Ntt> 半導体オ−ム性電極の形成方法
JPS6360526A (ja) * 1986-08-30 1988-03-16 Sharp Corp 半導体装置の製造方法
WO2013126458A1 (en) * 2012-02-24 2013-08-29 Skyworks Solutions, Inc. Improved structures, devices and methods releated to copper interconnects for compound semiconductors

Also Published As

Publication number Publication date
JPS5880872A (ja) 1983-05-16

Similar Documents

Publication Publication Date Title
US6043513A (en) Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact
JPH0799169A (ja) 炭化けい素電子デバイスの製造方法
JPS6211793B2 (cs)
US3942244A (en) Semiconductor element
US3987217A (en) Metallization system for semiconductor devices, devices utilizing such metallization system and method for making devices and metallization system
US3945111A (en) Metallization system for semiconductor devices, devices utilizing such metallization system and method for making devices and metallization system
JPH0139222B2 (cs)
JPH0864801A (ja) 炭化けい素半導体素子およびその製造方法
US3985515A (en) Metallization system for semiconductor devices, devices utilizing such metallization system and method for making devices and metallization system
US5045497A (en) Method of making a schottky electrode
US4077045A (en) Metallization system for semiconductive devices, devices utilizing such metallization system and method for making devices and metallization system
JPH01166556A (ja) ｎ型ＧａＡｓオーム性電極およびその形成方法
JPS61183961A (ja) 電極の製造方法
JPH0231507B2 (cs)
JPS5860535A (ja) 多層電極の製造方法
JPS5873136A (ja) 半導体デバイスの製造方法
JPS6016463A (ja) オ−ム性電極
JPH05335348A (ja) 半導体装置
JPS61203672A (ja) 電極の形成方法
JPS63299364A (ja) 半導体装置の製造方法
KR100203303B1 (ko) 반도체 소자의 금속 배선 형성방법
NL8103021A (nl) Halfgeleiderinrichting met schottky-diode en werkwijze voor het vervaardigen daarvan.
JPS63305555A (ja) パワー半導体デバイス
JP3142592B2 (ja) 合金電極形成方法
JPS6232656A (ja) 半導体装置及びその製造方法