JPS6211782B2 - - Google Patents

Info

Publication number
JPS6211782B2
JPS6211782B2 JP56035025A JP3502581A JPS6211782B2 JP S6211782 B2 JPS6211782 B2 JP S6211782B2 JP 56035025 A JP56035025 A JP 56035025A JP 3502581 A JP3502581 A JP 3502581A JP S6211782 B2 JPS6211782 B2 JP S6211782B2
Authority
JP
Japan
Prior art keywords
temperature
heat treatment
semiconductor device
substrate
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56035025A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57167638A (en
Inventor
Kazunori Imaoka
Hideaki Ozawa
Takao Hiraguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56035025A priority Critical patent/JPS57167638A/ja
Priority to EP82301212A priority patent/EP0060676B1/en
Priority to DE8282301212T priority patent/DE3280219D1/de
Priority to IE559/82A priority patent/IE55966B1/en
Publication of JPS57167638A publication Critical patent/JPS57167638A/ja
Publication of JPS6211782B2 publication Critical patent/JPS6211782B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/90—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP56035025A 1981-03-11 1981-03-11 Manufacture of semiconductor device Granted JPS57167638A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56035025A JPS57167638A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device
EP82301212A EP0060676B1 (en) 1981-03-11 1982-03-10 A method for the production of a semiconductor device comprising annealing a silicon wafer
DE8282301212T DE3280219D1 (de) 1981-03-11 1982-03-10 Verfahren zur herstellung einer halbleiteranordnung mit ausgluehen eines halbleiterkoerpers.
IE559/82A IE55966B1 (en) 1981-03-11 1982-03-11 A method for the production of a semiconductor device comprising annealing a silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56035025A JPS57167638A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57167638A JPS57167638A (en) 1982-10-15
JPS6211782B2 true JPS6211782B2 (cg-RX-API-DMAC10.html) 1987-03-14

Family

ID=12430513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56035025A Granted JPS57167638A (en) 1981-03-11 1981-03-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57167638A (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821829A (ja) * 1981-07-31 1983-02-08 Fujitsu Ltd 半導体装置の製造方法
JP2675011B2 (ja) * 1987-08-12 1997-11-12 株式会社日立製作所 熱処理装置及び熱処理方法
JPH01312840A (ja) * 1988-06-10 1989-12-18 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595330A (en) * 1979-01-12 1980-07-19 Toshiba Corp Preparation of semiconductor device

Also Published As

Publication number Publication date
JPS57167638A (en) 1982-10-15

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