JPS62115820A - 分子線結晶成長装置 - Google Patents
分子線結晶成長装置Info
- Publication number
- JPS62115820A JPS62115820A JP25508885A JP25508885A JPS62115820A JP S62115820 A JPS62115820 A JP S62115820A JP 25508885 A JP25508885 A JP 25508885A JP 25508885 A JP25508885 A JP 25508885A JP S62115820 A JPS62115820 A JP S62115820A
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- shutter
- beam source
- impurity
- source cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- 239000012535 impurity Substances 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 34
- 239000000126 substance Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000004308 accommodation Effects 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 229910052785 arsenic Inorganic materials 0.000 description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000011109 contamination Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- -1 GaAs compound Chemical class 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25508885A JPS62115820A (ja) | 1985-11-15 | 1985-11-15 | 分子線結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25508885A JPS62115820A (ja) | 1985-11-15 | 1985-11-15 | 分子線結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62115820A true JPS62115820A (ja) | 1987-05-27 |
| JPH022283B2 JPH022283B2 (enrdf_load_stackoverflow) | 1990-01-17 |
Family
ID=17273958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25508885A Granted JPS62115820A (ja) | 1985-11-15 | 1985-11-15 | 分子線結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62115820A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112746318A (zh) * | 2020-12-11 | 2021-05-04 | 湖南烁科晶磊半导体科技有限公司 | 一种三状态分子束外延用束源炉快门 |
-
1985
- 1985-11-15 JP JP25508885A patent/JPS62115820A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112746318A (zh) * | 2020-12-11 | 2021-05-04 | 湖南烁科晶磊半导体科技有限公司 | 一种三状态分子束外延用束源炉快门 |
| CN112746318B (zh) * | 2020-12-11 | 2022-02-18 | 湖南烁科晶磊半导体科技有限公司 | 一种三状态分子束外延用束源炉快门 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH022283B2 (enrdf_load_stackoverflow) | 1990-01-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |