JPS642437Y2 - - Google Patents
Info
- Publication number
- JPS642437Y2 JPS642437Y2 JP3198687U JP3198687U JPS642437Y2 JP S642437 Y2 JPS642437 Y2 JP S642437Y2 JP 3198687 U JP3198687 U JP 3198687U JP 3198687 U JP3198687 U JP 3198687U JP S642437 Y2 JPS642437 Y2 JP S642437Y2
- Authority
- JP
- Japan
- Prior art keywords
- source unit
- evaporation source
- substrate
- electron gun
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 30
- 230000008020 evaporation Effects 0.000 claims description 29
- 238000001704 evaporation Methods 0.000 claims description 29
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 11
- 230000005484 gravity Effects 0.000 claims description 9
- 239000007788 liquid Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 230000001154 acute effect Effects 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3198687U JPS642437Y2 (enrdf_load_stackoverflow) | 1987-03-06 | 1987-03-06 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3198687U JPS642437Y2 (enrdf_load_stackoverflow) | 1987-03-06 | 1987-03-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62147334U JPS62147334U (enrdf_load_stackoverflow) | 1987-09-17 |
JPS642437Y2 true JPS642437Y2 (enrdf_load_stackoverflow) | 1989-01-20 |
Family
ID=30838233
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3198687U Expired JPS642437Y2 (enrdf_load_stackoverflow) | 1987-03-06 | 1987-03-06 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS642437Y2 (enrdf_load_stackoverflow) |
-
1987
- 1987-03-06 JP JP3198687U patent/JPS642437Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS62147334U (enrdf_load_stackoverflow) | 1987-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5009923A (en) | Method of forming diamond film | |
JPS642437Y2 (enrdf_load_stackoverflow) | ||
JPS61141697A (ja) | 分子線結晶成長装置用分子線源 | |
JPH05263221A (ja) | 真空薄膜製造装置 | |
JPH05345970A (ja) | 真空蒸着装置 | |
JPH0519330Y2 (enrdf_load_stackoverflow) | ||
JPH0665466U (ja) | イオンプレーティング装置 | |
JPH0532468B2 (enrdf_load_stackoverflow) | ||
JP3500172B2 (ja) | 分子線エピタキシー装置 | |
JPS63282190A (ja) | 分子線結晶成長装置 | |
JP2595805Y2 (ja) | 真空蒸着装置 | |
JPH057249Y2 (enrdf_load_stackoverflow) | ||
JPS63224319A (ja) | 分子線エピタキシ−装置 | |
JPS60257126A (ja) | 分子線エピタキシ−装置 | |
JPH02258971A (ja) | 真空蒸着源 | |
JPH0325401Y2 (enrdf_load_stackoverflow) | ||
JPS62115820A (ja) | 分子線結晶成長装置 | |
JPH0360913B2 (enrdf_load_stackoverflow) | ||
JPH0352434B2 (enrdf_load_stackoverflow) | ||
JPS6294920A (ja) | 分子線発生源 | |
JPS63202907A (ja) | クライオパネル | |
JP2820471B2 (ja) | 薄膜形成装置 | |
JPH0572095B2 (enrdf_load_stackoverflow) | ||
JPS63224320A (ja) | 分子線エピタキシ−装置 | |
JPH06272028A (ja) | 薄膜作製方法およびその装置 |