JPS6211221A - 分子線エピタキシヤル成長方法 - Google Patents

分子線エピタキシヤル成長方法

Info

Publication number
JPS6211221A
JPS6211221A JP15192285A JP15192285A JPS6211221A JP S6211221 A JPS6211221 A JP S6211221A JP 15192285 A JP15192285 A JP 15192285A JP 15192285 A JP15192285 A JP 15192285A JP S6211221 A JPS6211221 A JP S6211221A
Authority
JP
Japan
Prior art keywords
substrate
gaas
molecular beam
growth
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15192285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0360173B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Toshiaki Kinosada
紀之定　俊明
Tatsuya Yamashita
山下　達哉
Koji Tomita
孝司 富田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP15192285A priority Critical patent/JPS6211221A/ja
Publication of JPS6211221A publication Critical patent/JPS6211221A/ja
Publication of JPH0360173B2 publication Critical patent/JPH0360173B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP15192285A 1985-07-08 1985-07-08 分子線エピタキシヤル成長方法 Granted JPS6211221A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15192285A JPS6211221A (ja) 1985-07-08 1985-07-08 分子線エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15192285A JPS6211221A (ja) 1985-07-08 1985-07-08 分子線エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS6211221A true JPS6211221A (ja) 1987-01-20
JPH0360173B2 JPH0360173B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-09-12

Family

ID=15529129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15192285A Granted JPS6211221A (ja) 1985-07-08 1985-07-08 分子線エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS6211221A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01125918A (ja) * 1987-11-11 1989-05-18 Sony Corp 半導体基板
US5459331A (en) * 1993-05-10 1995-10-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device, heterojunction bipolar transistor, and high electron mobility transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01125918A (ja) * 1987-11-11 1989-05-18 Sony Corp 半導体基板
US5459331A (en) * 1993-05-10 1995-10-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device, heterojunction bipolar transistor, and high electron mobility transistor

Also Published As

Publication number Publication date
JPH0360173B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-09-12

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