JPS6211016Y2 - - Google Patents
Info
- Publication number
- JPS6211016Y2 JPS6211016Y2 JP8613480U JP8613480U JPS6211016Y2 JP S6211016 Y2 JPS6211016 Y2 JP S6211016Y2 JP 8613480 U JP8613480 U JP 8613480U JP 8613480 U JP8613480 U JP 8613480U JP S6211016 Y2 JPS6211016 Y2 JP S6211016Y2
- Authority
- JP
- Japan
- Prior art keywords
- floating gate
- gate
- channel region
- region
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005468 ion implantation Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8613480U JPS6211016Y2 (forum.php) | 1980-06-18 | 1980-06-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8613480U JPS6211016Y2 (forum.php) | 1980-06-18 | 1980-06-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5710750U JPS5710750U (forum.php) | 1982-01-20 |
| JPS6211016Y2 true JPS6211016Y2 (forum.php) | 1987-03-16 |
Family
ID=29448337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8613480U Expired JPS6211016Y2 (forum.php) | 1980-06-18 | 1980-06-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6211016Y2 (forum.php) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5882571A (ja) * | 1981-11-10 | 1983-05-18 | Matsushita Electronics Corp | 半導体装置 |
| JPH0543851Y2 (forum.php) * | 1986-11-11 | 1993-11-05 |
-
1980
- 1980-06-18 JP JP8613480U patent/JPS6211016Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5710750U (forum.php) | 1982-01-20 |
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