JPS62101242U - - Google Patents

Info

Publication number
JPS62101242U
JPS62101242U JP1986189738U JP18973886U JPS62101242U JP S62101242 U JPS62101242 U JP S62101242U JP 1986189738 U JP1986189738 U JP 1986189738U JP 18973886 U JP18973886 U JP 18973886U JP S62101242 U JPS62101242 U JP S62101242U
Authority
JP
Japan
Prior art keywords
sensor array
image sensor
contact image
array according
control unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1986189738U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS62101242U publication Critical patent/JPS62101242U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024Details of scanning heads ; Means for illuminating the original
    • H04N1/028Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/03Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
    • H04N1/0308Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array characterised by the design of the photodetectors, e.g. shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14665Imagers using a photoconductor layer
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/024Details of scanning heads ; Means for illuminating the original
    • H04N1/028Details of scanning heads ; Means for illuminating the original for picture information pick-up
    • H04N1/03Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array
    • H04N1/031Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a substantially linear array the photodetectors having a one-to-one and optically positive correspondence with the scanned picture elements, e.g. linear contact sensors

Description

【図面の簡単な説明】
第1図は本考案による接触像センサ列の主要部
を断面図で示し、第2図は多数の第1図による接
触像センサ列の配置を示し、第3図は第1図によ
る接触像センサ列を平面図で示し、第4図は上面
にMOS入力保護構造を備えた制御ユニツトを示
し、第5図は第1図による接触像センサ列を備え
たパターンの光学的走査のための装置を示し、第
6図は第2図による装置の変形を示し、第7図お
よび第8図は従来の互いに異なる原理による2つ
のセンサ制御・信号選別回路を示す。 14…制御ユニツト、15…接触部、16…絶
縁層、17…基礎電極、18…光起電体層系、1
9…カバー電極、20…像点、21…MOS入力
保護構造。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 光電式センサ15〜19の列とこのセンサ
    列にそれぞれ付属した制御ユニツト14とを備え
    た光学情報読取用の接触像センサ列において、集
    積回路として構成された前記制御ユニツト14は
    前記センサ15〜19のための基板をなし、前記
    センサ15〜19は絶縁層16によつて分離され
    てその基板と接触させられていて、センサ列は直
    列配置された多数の構成ユニツト14〜19から
    構成されていることを特徴とする接触像センサ列
    。 (2) 多数の構成ユニツト14は互いにずらされ
    て並べられていることを特徴とする実用新案登録
    請求の範囲第1項記載の接触像センサ列。 (3) 各構成ユニツト14は、早数の平行なセン
    サ列A,B,Cを有することを特徴とする実用新
    案登録請求の範囲第1項または第2項記載の接触
    像センサ列。 (4) 制御ユニツト14の試験時に存在する保護
    構造21が後で分離されることを特徴とする実用
    新案登録請求の範囲第1項記載の接触像センサ列
    。 (5) 全部の構造が1つのウエーハ上で行われる
    ことを特徴とする実用新案登録請求の範囲第1項
    記載の接触像センサ列。
JP1986189738U 1985-12-13 1986-12-09 Pending JPS62101242U (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853544182 DE3544182A1 (de) 1985-12-13 1985-12-13 Kontaktbildsensorzeile

Publications (1)

Publication Number Publication Date
JPS62101242U true JPS62101242U (ja) 1987-06-27

Family

ID=6288402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986189738U Pending JPS62101242U (ja) 1985-12-13 1986-12-09

Country Status (4)

Country Link
US (1) US4775895A (ja)
EP (1) EP0225559B1 (ja)
JP (1) JPS62101242U (ja)
DE (2) DE3544182A1 (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6415970A (en) * 1987-07-09 1989-01-19 Canon Kk Image reading equipment
GB2228366B (en) * 1989-02-21 1993-09-29 Canon Kk Photoelectric converter and image reading apparatus mounting the same
US4974928A (en) * 1989-04-03 1990-12-04 Polaroid Corporation Integral fiber optic printhead
JPH03289759A (ja) * 1990-03-08 1991-12-19 Toshiba Corp 半導体装置
US5065245A (en) * 1990-04-30 1991-11-12 Eastman Kodak Company Modular image sensor array
DE19546423C1 (de) * 1995-12-12 1997-02-20 Siemens Ag Strahlungsempfindlicher Wandler
DE19710958C1 (de) * 1997-03-17 1998-08-20 Siemens Ag Strahlungsempfindlicher Wandler
JP3181874B2 (ja) * 1998-02-02 2001-07-03 セイコーインスツルメンツ株式会社 イメージセンサー
US6512221B2 (en) * 2001-03-13 2003-01-28 Cmos Sensor, Inc. Image sensor chip with an integrated operational amplifier and its application in a CIS module
CN1922732B (zh) * 2004-02-25 2010-06-09 S.O.I.Tec绝缘体上硅技术公司 光电检测装置
US7991242B2 (en) 2005-05-11 2011-08-02 Optosecurity Inc. Apparatus, method and system for screening receptacles and persons, having image distortion correction functionality
CA2608119A1 (en) 2005-05-11 2006-11-16 Optosecurity Inc. Method and system for screening luggage items, cargo containers or persons
US7899232B2 (en) 2006-05-11 2011-03-01 Optosecurity Inc. Method and apparatus for providing threat image projection (TIP) in a luggage screening system, and luggage screening system implementing same
US8494210B2 (en) 2007-03-30 2013-07-23 Optosecurity Inc. User interface for use in security screening providing image enhancement capabilities and apparatus for implementing same
KR101973221B1 (ko) 2011-09-07 2019-04-26 라피스캔 시스템스, 인코포레이티드 적하목록 데이터를 이미징/검출 프로세싱에 통합시키는 x-선 검사시스템
KR20140006152A (ko) * 2012-06-26 2014-01-16 삼성전자주식회사 전극 및 그 형성 방법과 상기 전극을 포함하는 전자 소자
GB2564038B (en) 2016-02-22 2021-11-10 Rapiscan Systems Inc Systems and methods for detecting threats and contraband in cargo
DE102019006358A1 (de) * 2019-09-09 2021-03-11 Giesecke+Devrient Currency Technology Gmbh Zeilensensor, Zeilensensoranordnung, Wertdokumentbearbeitungssystem und Verfahren zur Herstellung von Zeilsensoren

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165066A (en) * 1979-06-11 1980-12-23 Canon Inc Photoelectric conversion unit
JPS57129065A (en) * 1981-02-02 1982-08-10 Ricoh Co Ltd Image sensor
JPS5965474A (ja) * 1982-09-08 1984-04-13 テキサス・インスツルメンツ・インコ−ポレイテツド 集積された検出器アレイと信号処理器
JPS601077B2 (ja) * 1981-03-28 1985-01-11 日本フア−ネス工業株式会社 下水汚泥の蒸発濃縮器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303936A (en) * 1978-12-26 1981-12-01 Shaw Daniel L Structure for and method of reproduction
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
JPS56125156A (en) * 1980-02-26 1981-10-01 Asahi Optical Co Ltd Synthetic circuit of video signal
JPS5928065B2 (ja) * 1980-03-26 1984-07-10 株式会社日立製作所 固体撮像素子の製造方法
JPS5710273A (en) * 1980-06-20 1982-01-19 Hitachi Ltd Photosensor array device
EP0053946B1 (en) * 1980-12-10 1988-06-01 Fuji Xerox Co., Ltd. Elongate thin-film reader
US4438457A (en) * 1981-07-20 1984-03-20 Xerox Corporation High resolution imager employing staggered sensor structure
DE3138314A1 (de) * 1981-09-25 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor hoher packungsdichte mit fotoleiterschicht
JPS59108457A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像素子
JPS6051816A (ja) * 1983-08-31 1985-03-23 Toshiba Corp 読取装置
KR900002808B1 (ko) * 1984-07-26 1990-04-30 가부시끼 가이샤 도시바 화상 판독 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165066A (en) * 1979-06-11 1980-12-23 Canon Inc Photoelectric conversion unit
JPS57129065A (en) * 1981-02-02 1982-08-10 Ricoh Co Ltd Image sensor
JPS601077B2 (ja) * 1981-03-28 1985-01-11 日本フア−ネス工業株式会社 下水汚泥の蒸発濃縮器
JPS5965474A (ja) * 1982-09-08 1984-04-13 テキサス・インスツルメンツ・インコ−ポレイテツド 集積された検出器アレイと信号処理器

Also Published As

Publication number Publication date
EP0225559A1 (de) 1987-06-16
DE3544182A1 (de) 1987-06-19
EP0225559B1 (de) 1991-06-05
DE3679641D1 (de) 1991-07-11
US4775895A (en) 1988-10-04

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