JPS6210010B2 - - Google Patents
Info
- Publication number
- JPS6210010B2 JPS6210010B2 JP6425879A JP6425879A JPS6210010B2 JP S6210010 B2 JPS6210010 B2 JP S6210010B2 JP 6425879 A JP6425879 A JP 6425879A JP 6425879 A JP6425879 A JP 6425879A JP S6210010 B2 JPS6210010 B2 JP S6210010B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- electron beam
- pattern
- burrs
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000001514 detection method Methods 0.000 description 7
- 238000000992 sputter etching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910000889 permalloy Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6425879A JPS55156328A (en) | 1979-05-24 | 1979-05-24 | Manufacture for integrated element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6425879A JPS55156328A (en) | 1979-05-24 | 1979-05-24 | Manufacture for integrated element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55156328A JPS55156328A (en) | 1980-12-05 |
JPS6210010B2 true JPS6210010B2 (enrdf_load_stackoverflow) | 1987-03-04 |
Family
ID=13252974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6425879A Granted JPS55156328A (en) | 1979-05-24 | 1979-05-24 | Manufacture for integrated element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55156328A (enrdf_load_stackoverflow) |
-
1979
- 1979-05-24 JP JP6425879A patent/JPS55156328A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55156328A (en) | 1980-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0156316B1 (ko) | 반도체장치의 패턴 형성방법 | |
JPS6210010B2 (enrdf_load_stackoverflow) | ||
JP4039036B2 (ja) | アライメントマーク作製方法 | |
JP3219165B2 (ja) | 金属膜パターン形成方法 | |
JP3468417B2 (ja) | 薄膜形成方法 | |
KR100356014B1 (ko) | 정렬 마크 제조 방법 | |
KR960010726B1 (ko) | 반도체 소자의 레지스트 패턴 형성방법 | |
JPH09246159A (ja) | 位置合せ用マークを用いた半導体装置の製法 | |
JPH0770453B2 (ja) | 半導体装置の製造方法 | |
JP3314832B2 (ja) | パターン形成方法 | |
JPS6210009B2 (enrdf_load_stackoverflow) | ||
JPH0262939B2 (enrdf_load_stackoverflow) | ||
JPS6341020A (ja) | 半導体装置の製造方法 | |
JPH07111231A (ja) | 半導体装置およびその製造方法 | |
JPH08213302A (ja) | 微細加工方法及びこの加工方法に用いる微細加工用フォトマスク | |
JPS63308318A (ja) | アライメントマ−クの形成方法 | |
JPS60224227A (ja) | レジスト膜のパタ−ン形成方法 | |
JPS62193249A (ja) | 半導体装置の製造方法 | |
JPH03142820A (ja) | 半導体装置の製造方法 | |
JPH10312063A (ja) | リフトオフ用フォトレジストパターンの形成方法 | |
JPH05251336A (ja) | 半導体装置の製造方法 | |
JPH04263446A (ja) | Tab用テープキャリア | |
JPH06250395A (ja) | 金属印刷刷版の製造方法 | |
JPH087228A (ja) | アルミナ表面の加工方法 | |
JPS5941832A (ja) | 位置検出用マ−クの形成方法 |