JPS6199381A - 電界効果トランジスタ及びその製造方法 - Google Patents

電界効果トランジスタ及びその製造方法

Info

Publication number
JPS6199381A
JPS6199381A JP59221524A JP22152484A JPS6199381A JP S6199381 A JPS6199381 A JP S6199381A JP 59221524 A JP59221524 A JP 59221524A JP 22152484 A JP22152484 A JP 22152484A JP S6199381 A JPS6199381 A JP S6199381A
Authority
JP
Japan
Prior art keywords
channel region
region
effect transistor
field effect
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59221524A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0228254B2 (enrdf_load_stackoverflow
Inventor
Shigeru Okamura
茂 岡村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59221524A priority Critical patent/JPS6199381A/ja
Publication of JPS6199381A publication Critical patent/JPS6199381A/ja
Publication of JPH0228254B2 publication Critical patent/JPH0228254B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/221Channel regions of field-effect devices of FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP59221524A 1984-10-22 1984-10-22 電界効果トランジスタ及びその製造方法 Granted JPS6199381A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59221524A JPS6199381A (ja) 1984-10-22 1984-10-22 電界効果トランジスタ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59221524A JPS6199381A (ja) 1984-10-22 1984-10-22 電界効果トランジスタ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS6199381A true JPS6199381A (ja) 1986-05-17
JPH0228254B2 JPH0228254B2 (enrdf_load_stackoverflow) 1990-06-22

Family

ID=16768059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59221524A Granted JPS6199381A (ja) 1984-10-22 1984-10-22 電界効果トランジスタ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS6199381A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63153817A (ja) * 1986-12-17 1988-06-27 Fujitsu Ltd 半導体装置の製造方法
US5178552A (en) * 1990-08-28 1993-01-12 Yazaki Corporation Connector
US5183410A (en) * 1991-04-01 1993-02-02 Yazaki Corporation Connector assembly
US5206531A (en) * 1990-03-19 1993-04-27 Lockheed Sanders, Inc. Semiconductor device having a control gate with reduced semiconductor contact
EP0709927A2 (en) 1994-10-27 1996-05-01 Sumitomo Electric Industries, Ltd. Connector assembly

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63153817A (ja) * 1986-12-17 1988-06-27 Fujitsu Ltd 半導体装置の製造方法
US5206531A (en) * 1990-03-19 1993-04-27 Lockheed Sanders, Inc. Semiconductor device having a control gate with reduced semiconductor contact
US5178552A (en) * 1990-08-28 1993-01-12 Yazaki Corporation Connector
US5183410A (en) * 1991-04-01 1993-02-02 Yazaki Corporation Connector assembly
EP0709927A2 (en) 1994-10-27 1996-05-01 Sumitomo Electric Industries, Ltd. Connector assembly

Also Published As

Publication number Publication date
JPH0228254B2 (enrdf_load_stackoverflow) 1990-06-22

Similar Documents

Publication Publication Date Title
JPH0260217B2 (enrdf_load_stackoverflow)
JPH0324782B2 (enrdf_load_stackoverflow)
US5227644A (en) Heterojunction field effect transistor with improve carrier density and mobility
JPS6199381A (ja) 電界効果トランジスタ及びその製造方法
JPS61248570A (ja) Mesfet装置およびその製造方法
JPH0212927A (ja) Mes fetの製造方法
JPS6057980A (ja) 半導体装置の製造方法
KR910006751B1 (ko) 반도체 집적회로장치 및 그의 제조방법
JPH04282841A (ja) 半導体装置の製造方法
JPH06232168A (ja) 電界効果トランジスタおよびその製造方法
JPS60257180A (ja) 接合型電界効果型半導体装置の製造方法
JP2906856B2 (ja) 電界効果トランジスタの製造方法
KR950000155B1 (ko) 전계효과 트랜지스터의 제조방법
JP2663480B2 (ja) 半導体装置の製造方法
JPS62247573A (ja) シヨツトキ障壁ゲ−ト電界効果トランジスタの製造方法
JPS59172776A (ja) 半導体装置の製造方法
JPH01208867A (ja) 半導体装置およびその製造方法
JPS5893290A (ja) シヨツトキバリア電界効果トランジスタの製造方法
JPS61276270A (ja) Mes fetの製造方法
JPH01162378A (ja) 半導体装置
JPH01770A (ja) 化合物半導体集積回路
JPH024137B2 (enrdf_load_stackoverflow)
JPS62171165A (ja) 電界効果トランジスタ
JPS59113671A (ja) 電界効果トランジスタの製造方法
JPS6037176A (ja) 電界効果トランジスタの製造方法