JPS6199331A - 微細パタ−ン形成法 - Google Patents
微細パタ−ン形成法Info
- Publication number
- JPS6199331A JPS6199331A JP59220664A JP22066484A JPS6199331A JP S6199331 A JPS6199331 A JP S6199331A JP 59220664 A JP59220664 A JP 59220664A JP 22066484 A JP22066484 A JP 22066484A JP S6199331 A JPS6199331 A JP S6199331A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- etching
- predetermined portion
- resin
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59220664A JPS6199331A (ja) | 1984-10-19 | 1984-10-19 | 微細パタ−ン形成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59220664A JPS6199331A (ja) | 1984-10-19 | 1984-10-19 | 微細パタ−ン形成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6199331A true JPS6199331A (ja) | 1986-05-17 |
| JPH0564338B2 JPH0564338B2 (enrdf_load_stackoverflow) | 1993-09-14 |
Family
ID=16754514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59220664A Granted JPS6199331A (ja) | 1984-10-19 | 1984-10-19 | 微細パタ−ン形成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6199331A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63286843A (ja) * | 1987-05-19 | 1988-11-24 | Nippon Zeon Co Ltd | ポジ型フォトレジスト組成物 |
| JPH02275453A (ja) * | 1989-04-18 | 1990-11-09 | Fuji Photo Film Co Ltd | フオトレジスト組成物 |
| US5963841A (en) * | 1997-08-01 | 1999-10-05 | Advanced Micro Devices, Inc. | Gate pattern formation using a bottom anti-reflective coating |
| KR100433462B1 (ko) * | 2001-03-02 | 2004-05-31 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | 패턴형성방법 및 이 패턴형성방법을 이용한액정표시장치의 제조방법 |
| WO2020255985A1 (ja) * | 2019-06-17 | 2020-12-24 | 日産化学株式会社 | ジシアノスチリル基を含むウェットエッチング可能なレジスト下層膜形成組成物 |
-
1984
- 1984-10-19 JP JP59220664A patent/JPS6199331A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63286843A (ja) * | 1987-05-19 | 1988-11-24 | Nippon Zeon Co Ltd | ポジ型フォトレジスト組成物 |
| JPH02275453A (ja) * | 1989-04-18 | 1990-11-09 | Fuji Photo Film Co Ltd | フオトレジスト組成物 |
| US5963841A (en) * | 1997-08-01 | 1999-10-05 | Advanced Micro Devices, Inc. | Gate pattern formation using a bottom anti-reflective coating |
| KR100433462B1 (ko) * | 2001-03-02 | 2004-05-31 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | 패턴형성방법 및 이 패턴형성방법을 이용한액정표시장치의 제조방법 |
| WO2020255985A1 (ja) * | 2019-06-17 | 2020-12-24 | 日産化学株式会社 | ジシアノスチリル基を含むウェットエッチング可能なレジスト下層膜形成組成物 |
| JPWO2020255985A1 (enrdf_load_stackoverflow) * | 2019-06-17 | 2020-12-24 | ||
| US11977331B2 (en) | 2019-06-17 | 2024-05-07 | Nissan Chemical Corporation | Composition containing a dicyanostyryl group, for forming a resist underlayer film capable of being wet etched |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0564338B2 (enrdf_load_stackoverflow) | 1993-09-14 |
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