JPS6195529A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS6195529A
JPS6195529A JP21628484A JP21628484A JPS6195529A JP S6195529 A JPS6195529 A JP S6195529A JP 21628484 A JP21628484 A JP 21628484A JP 21628484 A JP21628484 A JP 21628484A JP S6195529 A JPS6195529 A JP S6195529A
Authority
JP
Japan
Prior art keywords
pattern
film
substrate
forming
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21628484A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518457B2 (cg-RX-API-DMAC7.html
Inventor
Hideo Akitani
秋谷　秀夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP21628484A priority Critical patent/JPS6195529A/ja
Publication of JPS6195529A publication Critical patent/JPS6195529A/ja
Publication of JPH0518457B2 publication Critical patent/JPH0518457B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP21628484A 1984-10-17 1984-10-17 パタ−ン形成方法 Granted JPS6195529A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21628484A JPS6195529A (ja) 1984-10-17 1984-10-17 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21628484A JPS6195529A (ja) 1984-10-17 1984-10-17 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS6195529A true JPS6195529A (ja) 1986-05-14
JPH0518457B2 JPH0518457B2 (cg-RX-API-DMAC7.html) 1993-03-12

Family

ID=16686119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21628484A Granted JPS6195529A (ja) 1984-10-17 1984-10-17 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS6195529A (cg-RX-API-DMAC7.html)

Also Published As

Publication number Publication date
JPH0518457B2 (cg-RX-API-DMAC7.html) 1993-03-12

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