JPS6195529A - パタ−ン形成方法 - Google Patents
パタ−ン形成方法Info
- Publication number
- JPS6195529A JPS6195529A JP59216284A JP21628484A JPS6195529A JP S6195529 A JPS6195529 A JP S6195529A JP 59216284 A JP59216284 A JP 59216284A JP 21628484 A JP21628484 A JP 21628484A JP S6195529 A JPS6195529 A JP S6195529A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- film
- substrate
- forming
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P50/00—
Landscapes
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59216284A JPS6195529A (ja) | 1984-10-17 | 1984-10-17 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59216284A JPS6195529A (ja) | 1984-10-17 | 1984-10-17 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6195529A true JPS6195529A (ja) | 1986-05-14 |
| JPH0518457B2 JPH0518457B2 (cg-RX-API-DMAC10.html) | 1993-03-12 |
Family
ID=16686119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59216284A Granted JPS6195529A (ja) | 1984-10-17 | 1984-10-17 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6195529A (cg-RX-API-DMAC10.html) |
-
1984
- 1984-10-17 JP JP59216284A patent/JPS6195529A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0518457B2 (cg-RX-API-DMAC10.html) | 1993-03-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH03270227A (ja) | 微細パターンの形成方法 | |
| US5563079A (en) | Method of making a field effect transistor | |
| US20090170310A1 (en) | Method of forming a metal line of a semiconductor device | |
| US5376227A (en) | Multilevel resist process | |
| JPH09270464A (ja) | 微細空中配線の作製方法 | |
| JPS6195529A (ja) | パタ−ン形成方法 | |
| JPH05249649A (ja) | フォトマスクおよびその製造方法 | |
| KR100228765B1 (ko) | 셀 어퍼처 마스크 제조방법 | |
| JP3116369B2 (ja) | 多層レジストドライエッチング方法 | |
| JPH01119028A (ja) | 半導体装置の製造方法 | |
| JPS60254733A (ja) | パタ−ン形成法 | |
| JPH0117253B2 (cg-RX-API-DMAC10.html) | ||
| JPH05206085A (ja) | 微細パターンの形成方法 | |
| JPH01110727A (ja) | 半導体装置の製造方法 | |
| JPH0239551A (ja) | 半導体装置の製造方法 | |
| JP2723384B2 (ja) | 半導体装置の製造方法 | |
| US20220013360A1 (en) | Method for forming self-aligned double pattern and semiconductor structures | |
| JPS63226930A (ja) | 半導体装置の製造方法 | |
| KR20010060984A (ko) | 반도체 장치의 콘택홀 형성방법 | |
| KR100255164B1 (ko) | 반도체 소자의 폴리실리콘/옥사이드 식각방법 | |
| JPH05343514A (ja) | 第1材料層に狭い溝を形成する方法 | |
| KR950006980B1 (ko) | 미세 패턴 형성을 위한 삼층 감광막 제조방법 | |
| JPS61296722A (ja) | 半導体装置の製造方法 | |
| JP2994644B2 (ja) | 電極の形成方法 | |
| JPS59106122A (ja) | 半導体装置の製造方法 |