JPS6193633A - 半導体基板用モリブデン板の製造方法 - Google Patents
半導体基板用モリブデン板の製造方法Info
- Publication number
- JPS6193633A JPS6193633A JP59214099A JP21409984A JPS6193633A JP S6193633 A JPS6193633 A JP S6193633A JP 59214099 A JP59214099 A JP 59214099A JP 21409984 A JP21409984 A JP 21409984A JP S6193633 A JPS6193633 A JP S6193633A
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- plate
- thickness
- punching
- clearance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
Landscapes
- Punching Or Piercing (AREA)
- Die Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59214099A JPS6193633A (ja) | 1984-10-15 | 1984-10-15 | 半導体基板用モリブデン板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59214099A JPS6193633A (ja) | 1984-10-15 | 1984-10-15 | 半導体基板用モリブデン板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6193633A true JPS6193633A (ja) | 1986-05-12 |
| JPH0574935B2 JPH0574935B2 (ref) | 1993-10-19 |
Family
ID=16650205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59214099A Granted JPS6193633A (ja) | 1984-10-15 | 1984-10-15 | 半導体基板用モリブデン板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6193633A (ref) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513056U (ja) * | 1991-07-26 | 1993-02-19 | 京セラ株式会社 | 半導体素子収納用パツケージ |
-
1984
- 1984-10-15 JP JP59214099A patent/JPS6193633A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0513056U (ja) * | 1991-07-26 | 1993-02-19 | 京セラ株式会社 | 半導体素子収納用パツケージ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0574935B2 (ref) | 1993-10-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2856030B2 (ja) | 結合ウエーハの製造方法 | |
| US3856472A (en) | Apparatus for the gettering of semiconductors | |
| KR960005898A (ko) | 반도체기판 및 반도체기판의 제조방법 | |
| JPS60176981A (ja) | セラミツクスの強化方法 | |
| JPS6193633A (ja) | 半導体基板用モリブデン板の製造方法 | |
| US2493951A (en) | Process of hardening alloys by indiffusion of a metalloid | |
| JPS64817B2 (ref) | ||
| CN112251692A (zh) | 一种高纯钽板及其热处理方法 | |
| Hamada et al. | Hall-effect mobility enhancement of sputtered MoS2 film by sulfurization even through Al2O3 passivation film simultaneously preventing oxidation | |
| JPH10114532A (ja) | 石英ガラス質半導体熱処理用治具の製造方法 | |
| JPH0712017B2 (ja) | X線リソグラフィー用SiC/Si▲下3▼N▲下4▼膜の成膜方法 | |
| JP2854038B2 (ja) | 半導体素子 | |
| JPS6046345A (ja) | モリブデン板及びその製造方法 | |
| JPS5943973B2 (ja) | Agメッキ用リ−ドフレ−ム素材の製法 | |
| JPS6292329A (ja) | 絶縁膜形成方法 | |
| JPH04120721A (ja) | 半導体装置およびその製造方法 | |
| TW200534398A (en) | Method for monitoring low-temperature and fast annealing process | |
| JP2740675B2 (ja) | 半導体装置 | |
| JPH05144745A (ja) | 半導体基板の製造方法 | |
| JPS6344722A (ja) | 半導体装置の製造方法 | |
| JPH02148790A (ja) | 電気回路用基板およびその製造方法 | |
| KR20240098333A (ko) | 표면 전도성 및 내구성이 우수한 연료전지 분리판용 티타늄 판재 및 이의 제조방법 | |
| JPS62146235A (ja) | タングステン部材とその製造方法 | |
| JPS6137944A (ja) | モリブデン板及びその製造方法 | |
| JPH06283693A (ja) | Soiウェーハの作製方法 |