JPS6190161A - 集束イオンビ−ムのビ−ム形状調整方法 - Google Patents

集束イオンビ−ムのビ−ム形状調整方法

Info

Publication number
JPS6190161A
JPS6190161A JP59211675A JP21167584A JPS6190161A JP S6190161 A JPS6190161 A JP S6190161A JP 59211675 A JP59211675 A JP 59211675A JP 21167584 A JP21167584 A JP 21167584A JP S6190161 A JPS6190161 A JP S6190161A
Authority
JP
Japan
Prior art keywords
ion beam
ion
shape
pattern
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59211675A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6319856B2 (enrdf_load_stackoverflow
Inventor
Hideaki Kyogoku
京極 英明
Takashi Minafuji
孝 皆藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP59211675A priority Critical patent/JPS6190161A/ja
Priority to US06/783,247 priority patent/US4704526A/en
Priority to EP85307089A priority patent/EP0178129B1/en
Priority to DE8585307089T priority patent/DE3572889D1/de
Publication of JPS6190161A publication Critical patent/JPS6190161A/ja
Publication of JPS6319856B2 publication Critical patent/JPS6319856B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects
    • G03F1/74Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP59211675A 1984-10-09 1984-10-09 集束イオンビ−ムのビ−ム形状調整方法 Granted JPS6190161A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59211675A JPS6190161A (ja) 1984-10-09 1984-10-09 集束イオンビ−ムのビ−ム形状調整方法
US06/783,247 US4704526A (en) 1984-10-09 1985-10-02 Apparatus of regulating shape of focused ion beams
EP85307089A EP0178129B1 (en) 1984-10-09 1985-10-03 Apparatus for and method of regulating the shape of a focused ion beam
DE8585307089T DE3572889D1 (en) 1984-10-09 1985-10-03 Apparatus for and method of regulating the shape of a focused ion beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59211675A JPS6190161A (ja) 1984-10-09 1984-10-09 集束イオンビ−ムのビ−ム形状調整方法

Publications (2)

Publication Number Publication Date
JPS6190161A true JPS6190161A (ja) 1986-05-08
JPS6319856B2 JPS6319856B2 (enrdf_load_stackoverflow) 1988-04-25

Family

ID=16609728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59211675A Granted JPS6190161A (ja) 1984-10-09 1984-10-09 集束イオンビ−ムのビ−ム形状調整方法

Country Status (4)

Country Link
US (1) US4704526A (enrdf_load_stackoverflow)
EP (1) EP0178129B1 (enrdf_load_stackoverflow)
JP (1) JPS6190161A (enrdf_load_stackoverflow)
DE (1) DE3572889D1 (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63138559U (enrdf_load_stackoverflow) * 1987-03-03 1988-09-12
JPH05251039A (ja) * 1992-03-04 1993-09-28 Ebara Corp 二次イオン質量分析計
FR2823005B1 (fr) * 2001-03-28 2003-05-16 Centre Nat Rech Scient Dispositif de generation d'un faisceau d'ions et procede de reglage de ce faisceau

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3628014A (en) * 1969-12-22 1971-12-14 Boeing Co Scanning electron microscope with color display means
US3772520A (en) * 1972-03-21 1973-11-13 Us Air Force Method for the investigation of thin films on a semiconductor substrate in a scanning electron microscope
US4041311A (en) * 1976-07-12 1977-08-09 Iowa State University Research Foundation, Inc. Scanning electron microscope with color image display
JPS5481075A (en) * 1977-11-24 1979-06-28 Cho Lsi Gijutsu Kenkyu Kumiai Method of detecting article image using electron beam
WO1983000921A1 (en) * 1981-09-01 1983-03-17 Antonovsky, Ariel, David Method and apparatus for image formation
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法
JPS5918555A (ja) * 1982-07-22 1984-01-30 Erionikusu:Kk 荷電粒子線取扱方法および装置
US4588890A (en) * 1984-12-31 1986-05-13 International Business Machines Corporation Apparatus and method for composite image formation by scanning electron beam

Also Published As

Publication number Publication date
DE3572889D1 (en) 1989-10-12
EP0178129B1 (en) 1989-09-06
JPS6319856B2 (enrdf_load_stackoverflow) 1988-04-25
US4704526A (en) 1987-11-03
EP0178129A2 (en) 1986-04-16
EP0178129A3 (en) 1988-01-20

Similar Documents

Publication Publication Date Title
US20210192700A1 (en) Method for detector equalization during the imgaging of objects with a multi-beam particle microscope
KR100669846B1 (ko) 표면 상의 이상을 검사하기 위한 스캐닝 방법 및 시스템
US8928881B2 (en) Cytometer with automatic continuous alignment correction
US6124926A (en) Defect detecting method and device
US4209257A (en) Apparatus for detecting defects in patterns
JPH08261950A (ja) 特に圧延された薄板の表面欠陥の光学的検出用の装置
JPS6190161A (ja) 集束イオンビ−ムのビ−ム形状調整方法
JPH06308046A (ja) 周期性パターン検査装置
JP5531405B2 (ja) 周期性パターンのムラ検査方法及び検査装置
JPH04166709A (ja) 表面性状観測装置
JPH0373451U (enrdf_load_stackoverflow)
JP2698697B2 (ja) 表面疵検査方法
JPH07282769A (ja) 電子線回折装置
JPH08241841A (ja) パターンイオンビーム投射方法およびその装置
JPH03235949A (ja) マスク検査方法
JPH07120619B2 (ja) 電子線描画方法
JPH09199018A (ja) 陰極線管用電子銃の組立方法
JPS62237454A (ja) イオンビ−ムによるフオトマスクの白点欠陥修正方法
JPH097521A (ja) シャドウマスクの検査方法
JPH0120957B2 (enrdf_load_stackoverflow)
JPS62287556A (ja) 荷電ビ−ムの軸合せ方法
JPH0750665B2 (ja) 荷電ビ−ム描画装置
JP3287449B2 (ja) 光ピックアップの不良判定方法及びそれを用いた光ピックアップ検査装置
JPS60146441A (ja) 透過型電子顕微鏡
JPH01146380A (ja) レーザ光の焦点検出方法及びレーザ光の焦点検出装置

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term