JPS6184862A - 光電変換装置の製造方法 - Google Patents

光電変換装置の製造方法

Info

Publication number
JPS6184862A
JPS6184862A JP59207348A JP20734884A JPS6184862A JP S6184862 A JPS6184862 A JP S6184862A JP 59207348 A JP59207348 A JP 59207348A JP 20734884 A JP20734884 A JP 20734884A JP S6184862 A JPS6184862 A JP S6184862A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
light
conversion device
conversion element
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59207348A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564468B2 (enrdf_load_stackoverflow
Inventor
Takahiro Nishikura
西倉　孝弘
Noriko Kojima
小島　徳子
Kiyotaka Wasa
清孝 和佐
Noboru Yoshigami
由上　登
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59207348A priority Critical patent/JPS6184862A/ja
Publication of JPS6184862A publication Critical patent/JPS6184862A/ja
Publication of JPH0564468B2 publication Critical patent/JPH0564468B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Light Receiving Elements (AREA)
JP59207348A 1984-10-02 1984-10-02 光電変換装置の製造方法 Granted JPS6184862A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59207348A JPS6184862A (ja) 1984-10-02 1984-10-02 光電変換装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59207348A JPS6184862A (ja) 1984-10-02 1984-10-02 光電変換装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6184862A true JPS6184862A (ja) 1986-04-30
JPH0564468B2 JPH0564468B2 (enrdf_load_stackoverflow) 1993-09-14

Family

ID=16538246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59207348A Granted JPS6184862A (ja) 1984-10-02 1984-10-02 光電変換装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6184862A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128748A (ja) * 1986-11-19 1988-06-01 Ricoh Co Ltd 密着型イメ−ジセンサ
US4940888A (en) * 1988-03-14 1990-07-10 Hitachi, Ltd. Direct-contact-type image sensor and image sensor assembly
US5162644A (en) * 1988-03-14 1992-11-10 Hitachi, Ltd. Contact type image sensor having photoelectric conversion elements to reduce signal variation caused by luminous intensity variation of light source
GB2353140A (en) * 1999-07-19 2001-02-14 Agilent Technologies Inc Tungsten or titanium-tungsten optical barrier in dark pixel

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840856A (ja) * 1981-09-03 1983-03-09 Nippon Telegr & Teleph Corp <Ntt> 光センサアレイ
JPS5856363A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd 受光素子
JPS59151456A (ja) * 1983-02-17 1984-08-29 Nec Corp 混成集積化光センサ用光電変換素子とその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840856A (ja) * 1981-09-03 1983-03-09 Nippon Telegr & Teleph Corp <Ntt> 光センサアレイ
JPS5856363A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd 受光素子
JPS59151456A (ja) * 1983-02-17 1984-08-29 Nec Corp 混成集積化光センサ用光電変換素子とその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128748A (ja) * 1986-11-19 1988-06-01 Ricoh Co Ltd 密着型イメ−ジセンサ
US4940888A (en) * 1988-03-14 1990-07-10 Hitachi, Ltd. Direct-contact-type image sensor and image sensor assembly
US4977313A (en) * 1988-03-14 1990-12-11 Hitachi, Ltd. Facsimile equipment with direct-contact-type image sensor
US5162644A (en) * 1988-03-14 1992-11-10 Hitachi, Ltd. Contact type image sensor having photoelectric conversion elements to reduce signal variation caused by luminous intensity variation of light source
GB2353140A (en) * 1999-07-19 2001-02-14 Agilent Technologies Inc Tungsten or titanium-tungsten optical barrier in dark pixel
US6326601B1 (en) 1999-07-19 2001-12-04 Agilent Technologies, Inc. Optical barrier

Also Published As

Publication number Publication date
JPH0564468B2 (enrdf_load_stackoverflow) 1993-09-14

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees