JPS6167922A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS6167922A
JPS6167922A JP59190817A JP19081784A JPS6167922A JP S6167922 A JPS6167922 A JP S6167922A JP 59190817 A JP59190817 A JP 59190817A JP 19081784 A JP19081784 A JP 19081784A JP S6167922 A JPS6167922 A JP S6167922A
Authority
JP
Japan
Prior art keywords
upper electrode
plasma treating
insulator
jetting ports
jetting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59190817A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0520898B2 (enExample
Inventor
Kenji Koyama
小山　堅二
Kanetake Takasaki
高崎　金剛
Atsuhiro Tsukune
敦弘 筑根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59190817A priority Critical patent/JPS6167922A/ja
Publication of JPS6167922A publication Critical patent/JPS6167922A/ja
Publication of JPH0520898B2 publication Critical patent/JPH0520898B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Drying Of Semiconductors (AREA)
JP59190817A 1984-09-12 1984-09-12 プラズマ処理装置 Granted JPS6167922A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59190817A JPS6167922A (ja) 1984-09-12 1984-09-12 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59190817A JPS6167922A (ja) 1984-09-12 1984-09-12 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS6167922A true JPS6167922A (ja) 1986-04-08
JPH0520898B2 JPH0520898B2 (enExample) 1993-03-22

Family

ID=16264244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59190817A Granted JPS6167922A (ja) 1984-09-12 1984-09-12 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS6167922A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01279784A (ja) * 1988-05-02 1989-11-10 Tokyo Electron Ltd エッチング装置
JPH0245631U (enExample) * 1988-09-24 1990-03-29
US4954201A (en) * 1988-10-15 1990-09-04 Leybold Aktiengesellschaft Apparatus for etching substrates with a luminous discharge
US5324411A (en) * 1991-09-20 1994-06-28 Toshiba Ceramics Co., Ltd. Electrode plate for plasma etching
US5643394A (en) * 1994-09-16 1997-07-01 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
WO1998046808A1 (en) * 1997-04-11 1998-10-22 Tokyo Electron Limited Processor
WO2005052980A1 (en) * 2003-11-13 2005-06-09 Oxford Instruments Plasma Technology Limited Gas port assembly
JP2013251367A (ja) * 2012-05-31 2013-12-12 Shimadzu Corp プラズマｃｖｄ成膜装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01279784A (ja) * 1988-05-02 1989-11-10 Tokyo Electron Ltd エッチング装置
JPH0245631U (enExample) * 1988-09-24 1990-03-29
US4954201A (en) * 1988-10-15 1990-09-04 Leybold Aktiengesellschaft Apparatus for etching substrates with a luminous discharge
US5324411A (en) * 1991-09-20 1994-06-28 Toshiba Ceramics Co., Ltd. Electrode plate for plasma etching
US5643394A (en) * 1994-09-16 1997-07-01 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US6334983B1 (en) 1997-04-11 2002-01-01 Tokyo Electron Limited Processing system
WO1998046808A1 (en) * 1997-04-11 1998-10-22 Tokyo Electron Limited Processor
USRE39939E1 (en) 1997-04-11 2007-12-18 Tokyo Electron Limited Processing system
USRE39969E1 (en) 1997-04-11 2008-01-01 Tokyo Electron Limited Processing system
USRE40046E1 (en) 1997-04-11 2008-02-12 Tokyo Electron Limited Processing system
WO2005052980A1 (en) * 2003-11-13 2005-06-09 Oxford Instruments Plasma Technology Limited Gas port assembly
US7651552B2 (en) 2003-11-13 2010-01-26 Oxford Instruments Plasma Technology Limited Gas port assembly
JP2013251367A (ja) * 2012-05-31 2013-12-12 Shimadzu Corp プラズマｃｖｄ成膜装置

Also Published As

Publication number Publication date
JPH0520898B2 (enExample) 1993-03-22

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