JPS6166696A - レ−ザ−記録媒体 - Google Patents
レ−ザ−記録媒体Info
- Publication number
- JPS6166696A JPS6166696A JP59188920A JP18892084A JPS6166696A JP S6166696 A JPS6166696 A JP S6166696A JP 59188920 A JP59188920 A JP 59188920A JP 18892084 A JP18892084 A JP 18892084A JP S6166696 A JPS6166696 A JP S6166696A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording medium
- recording
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910001245 Sb alloy Inorganic materials 0.000 claims abstract description 4
- 229910001152 Bi alloy Inorganic materials 0.000 claims abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract description 18
- 229910052797 bismuth Inorganic materials 0.000 abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002985 plastic film Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 66
- 239000010408 film Substances 0.000 description 43
- 238000002425 crystallisation Methods 0.000 description 15
- 230000008025 crystallization Effects 0.000 description 15
- 230000003287 optical effect Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 9
- 239000000956 alloy Substances 0.000 description 9
- 229910001020 Au alloy Inorganic materials 0.000 description 7
- -1 PbFz Inorganic materials 0.000 description 7
- 238000005280 amorphization Methods 0.000 description 7
- 239000003353 gold alloy Substances 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000005191 phase separation Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- VXKWYPOMXBVZSJ-UHFFFAOYSA-N tetramethyltin Chemical compound C[Sn](C)(C)C VXKWYPOMXBVZSJ-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229910020187 CeF3 Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005534 GaO2 Inorganic materials 0.000 description 1
- 229910013830 M2O3 Inorganic materials 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- FPHIOHCCQGUGKU-UHFFFAOYSA-L difluorolead Chemical compound F[Pb]F FPHIOHCCQGUGKU-UHFFFAOYSA-L 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- GNBHRKFJIUUOQI-UHFFFAOYSA-N fluorescein Chemical compound O1C(=O)C2=CC=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 GNBHRKFJIUUOQI-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 239000000382 optic material Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M5/00—Duplicating or marking methods; Sheet materials for use therein
- B41M5/26—Thermography ; Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Duplication Or Marking (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59188920A JPS6166696A (ja) | 1984-09-11 | 1984-09-11 | レ−ザ−記録媒体 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59188920A JPS6166696A (ja) | 1984-09-11 | 1984-09-11 | レ−ザ−記録媒体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6166696A true JPS6166696A (ja) | 1986-04-05 |
| JPH0522592B2 JPH0522592B2 (enrdf_load_stackoverflow) | 1993-03-30 |
Family
ID=16232194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59188920A Granted JPS6166696A (ja) | 1984-09-11 | 1984-09-11 | レ−ザ−記録媒体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6166696A (enrdf_load_stackoverflow) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63225934A (ja) * | 1986-09-22 | 1988-09-20 | Matsushita Electric Ind Co Ltd | 光学的情報記録媒体 |
| JPH01277336A (ja) * | 1988-04-28 | 1989-11-07 | Matsushita Electric Ind Co Ltd | 光学情報記録再生消去部材と光ディスク |
| JPH025237A (ja) * | 1988-06-22 | 1990-01-10 | Matsushita Electric Ind Co Ltd | 光学情報記録再生消去部材の記録再生消去方法 |
| JPH0376684A (ja) * | 1989-08-21 | 1991-04-02 | Hisankabutsu Glass Kenkyu Kaihatsu Kk | 書換え型光情報記録媒体 |
| JPH03259437A (ja) * | 1990-03-08 | 1991-11-19 | Matsushita Electric Ind Co Ltd | 光学情報記録部材 |
| JPH03295040A (ja) * | 1990-04-12 | 1991-12-26 | Matsushita Electric Ind Co Ltd | 光学的情報記録方法、再生方法及び消去方法 |
| JPH04134642A (ja) * | 1990-09-25 | 1992-05-08 | Matsushita Electric Ind Co Ltd | 光学的情報記録媒体 |
| JPH04134644A (ja) * | 1990-09-25 | 1992-05-08 | Matsushita Electric Ind Co Ltd | 光学情報記録部材 |
| JPH04134645A (ja) * | 1990-09-25 | 1992-05-08 | Matsushita Electric Ind Co Ltd | 光学情報記録部材 |
| JPH04146188A (ja) * | 1990-10-09 | 1992-05-20 | Matsushita Electric Ind Co Ltd | 光学的情報記録媒体および光学的情報記録再生方法 |
-
1984
- 1984-09-11 JP JP59188920A patent/JPS6166696A/ja active Granted
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63225934A (ja) * | 1986-09-22 | 1988-09-20 | Matsushita Electric Ind Co Ltd | 光学的情報記録媒体 |
| JPH0845074A (ja) * | 1986-09-22 | 1996-02-16 | Matsushita Electric Ind Co Ltd | 光学的可逆記録方法 |
| JPH01277336A (ja) * | 1988-04-28 | 1989-11-07 | Matsushita Electric Ind Co Ltd | 光学情報記録再生消去部材と光ディスク |
| JPH025237A (ja) * | 1988-06-22 | 1990-01-10 | Matsushita Electric Ind Co Ltd | 光学情報記録再生消去部材の記録再生消去方法 |
| JPH0376684A (ja) * | 1989-08-21 | 1991-04-02 | Hisankabutsu Glass Kenkyu Kaihatsu Kk | 書換え型光情報記録媒体 |
| JPH03259437A (ja) * | 1990-03-08 | 1991-11-19 | Matsushita Electric Ind Co Ltd | 光学情報記録部材 |
| JPH03295040A (ja) * | 1990-04-12 | 1991-12-26 | Matsushita Electric Ind Co Ltd | 光学的情報記録方法、再生方法及び消去方法 |
| JPH04134642A (ja) * | 1990-09-25 | 1992-05-08 | Matsushita Electric Ind Co Ltd | 光学的情報記録媒体 |
| JPH04134644A (ja) * | 1990-09-25 | 1992-05-08 | Matsushita Electric Ind Co Ltd | 光学情報記録部材 |
| JPH04134645A (ja) * | 1990-09-25 | 1992-05-08 | Matsushita Electric Ind Co Ltd | 光学情報記録部材 |
| JPH04146188A (ja) * | 1990-10-09 | 1992-05-20 | Matsushita Electric Ind Co Ltd | 光学的情報記録媒体および光学的情報記録再生方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0522592B2 (enrdf_load_stackoverflow) | 1993-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5346740A (en) | Optical information recording medium | |
| JP2512087B2 (ja) | 光記録媒体および光記録方法 | |
| TWI221281B (en) | Optical recording medium and optical recording method therefor | |
| JP3011200B2 (ja) | 光記録媒体 | |
| JPH01303643A (ja) | レーザ記録媒体 | |
| US6660451B1 (en) | Optical information recording medium | |
| JPS6166696A (ja) | レ−ザ−記録媒体 | |
| JP2003182237A (ja) | ライト・ワンスアプリケーション用の相変化記録素子 | |
| JPH01277338A (ja) | 光記録媒体 | |
| JP2003051137A (ja) | 情報記録媒体 | |
| JPS62222442A (ja) | 書換型光記録媒体 | |
| JP2834131B2 (ja) | 情報記録用薄膜 | |
| US5389417A (en) | Optical recording medium | |
| JP2553736B2 (ja) | 光記録媒体と光記録媒体の製造方法 | |
| JPS6144692A (ja) | レ−ザビ−ム記録部材 | |
| WO2005015555A1 (ja) | 光学情報記録媒体及びその製造方法 | |
| JP2000190637A (ja) | 光学的情報記録媒体 | |
| JP3151848B2 (ja) | 光学情報記録媒体 | |
| JPH04232780A (ja) | 相変化光学式記録用媒体 | |
| KR20050094279A (ko) | 초해상층을 갖는 광 정보저장 매체 | |
| JP2002117577A (ja) | 光記録媒体および光学的情報記録方法 | |
| JP2962050B2 (ja) | 光学情報記録媒体 | |
| JPS62102438A (ja) | 光学記録用部材 | |
| JP2991725B2 (ja) | 光学情報記録媒体 | |
| JP2766276B2 (ja) | 書き替え可能な相変化型光メモリ媒体 |