JPS616556B2 - - Google Patents

Info

Publication number
JPS616556B2
JPS616556B2 JP52029741A JP2974177A JPS616556B2 JP S616556 B2 JPS616556 B2 JP S616556B2 JP 52029741 A JP52029741 A JP 52029741A JP 2974177 A JP2974177 A JP 2974177A JP S616556 B2 JPS616556 B2 JP S616556B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52029741A
Other languages
Japanese (ja)
Other versions
JPS52122471A (en
Inventor
Emiru Kaaruson Deebitsudo
Rooman Uronsuki Kurisutofua
Robaato Toriano Junia Arufuretsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/710,186 external-priority patent/US4142195A/en
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS52122471A publication Critical patent/JPS52122471A/ja
Publication of JPS616556B2 publication Critical patent/JPS616556B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02474—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2974177A 1976-03-22 1977-03-16 Schottky barier semiconductor device Granted JPS52122471A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66890876A 1976-03-22 1976-03-22
US05/710,186 US4142195A (en) 1976-03-22 1976-07-30 Schottky barrier semiconductor device and method of making same

Publications (2)

Publication Number Publication Date
JPS52122471A JPS52122471A (en) 1977-10-14
JPS616556B2 true JPS616556B2 (en, 2012) 1986-02-27

Family

ID=27100017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2974177A Granted JPS52122471A (en) 1976-03-22 1977-03-16 Schottky barier semiconductor device

Country Status (6)

Country Link
JP (1) JPS52122471A (en, 2012)
CA (1) CA1078078A (en, 2012)
DE (1) DE2711365A1 (en, 2012)
FR (1) FR2345810A1 (en, 2012)
GB (1) GB1572846A (en, 2012)
HK (1) HK72084A (en, 2012)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
CA1123525A (en) * 1977-10-12 1982-05-11 Stanford R. Ovshinsky High temperature amorphous semiconductor member and method of making same
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
JPS54145537A (en) * 1978-05-04 1979-11-13 Canon Inc Preparation of electrophotographic image forming material
DE2836911C2 (de) * 1978-08-23 1986-11-06 Siemens AG, 1000 Berlin und 8000 München Passivierungsschicht für Halbleiterbauelemente
DE2904171A1 (de) * 1979-02-05 1980-08-14 Siemens Ag Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung
US4200473A (en) * 1979-03-12 1980-04-29 Rca Corporation Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
AU535443B2 (en) * 1979-03-20 1984-03-22 Sanyo Electric Co., Ltd. Sunlight into energy conversion apparatus
US4226643A (en) * 1979-07-16 1980-10-07 Rca Corporation Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film
FR2462782A1 (fr) * 1979-08-03 1981-02-13 Thomson Csf Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede
FR2463508A1 (fr) * 1979-08-16 1981-02-20 Anvar Procede de realisation de contacts ohmiques sur une couche active de silicium amorphe hydrogene
DE2946108C2 (de) * 1979-11-15 1985-02-14 Koch & Sterzel Gmbh & Co, 4300 Essen Strahlendetektor
JPS5728368A (en) * 1980-07-28 1982-02-16 Hitachi Ltd Manufacture of semiconductor film
US4412900A (en) * 1981-03-13 1983-11-01 Hitachi, Ltd. Method of manufacturing photosensors
JPS604273A (ja) * 1983-06-22 1985-01-10 Toshiba Corp 光電変換部材
JPS604274A (ja) * 1983-06-22 1985-01-10 Toshiba Corp 光電変換部材
JPS6088955A (ja) * 1983-10-21 1985-05-18 Stanley Electric Co Ltd プラズマｃｖｄ装置
JPS62142374A (ja) * 1986-11-29 1987-06-25 Shunpei Yamazaki 光電変換半導体装置作製方法
JP2704569B2 (ja) * 1991-06-28 1998-01-26 株式会社半導体エネルギー研究所 半導体装置作製方法
JPH077168A (ja) * 1994-04-15 1995-01-10 Semiconductor Energy Lab Co Ltd 光電変換半導体装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
AMORPHOUS AND LIGVID SEMICONDVCTORS=1974 *
APPLIED PHYSICS LETTERS=1976 *
JOURNAL OF APPLIED PHYSICS=1974 *

Also Published As

Publication number Publication date
DE2711365C2 (en, 2012) 1988-09-01
DE2711365A1 (de) 1977-09-29
FR2345810B1 (en, 2012) 1982-04-09
HK72084A (en) 1984-09-28
CA1078078A (en) 1980-05-20
GB1572846A (en) 1980-08-06
FR2345810A1 (fr) 1977-10-21
JPS52122471A (en) 1977-10-14

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