JPS6164179A - 圧電装置 - Google Patents
圧電装置Info
- Publication number
- JPS6164179A JPS6164179A JP59187156A JP18715684A JPS6164179A JP S6164179 A JPS6164179 A JP S6164179A JP 59187156 A JP59187156 A JP 59187156A JP 18715684 A JP18715684 A JP 18715684A JP S6164179 A JPS6164179 A JP S6164179A
- Authority
- JP
- Japan
- Prior art keywords
- film
- piezoelectric
- zinc oxide
- insulation
- crystal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 44
- 239000013078 crystal Substances 0.000 claims description 26
- 239000011787 zinc oxide Substances 0.000 claims description 22
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000009413 insulation Methods 0.000 description 19
- 238000009826 distribution Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 244000061508 Eriobotrya japonica Species 0.000 description 1
- 235000009008 Eriobotrya japonica Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- FCOUFRZOMZERRM-UHFFFAOYSA-N [O-2].[Zn+2].[C+4].[O-2].[O-2] Chemical compound [O-2].[Zn+2].[C+4].[O-2].[O-2] FCOUFRZOMZERRM-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/88—Mounts; Supports; Enclosures; Casings
- H10N30/883—Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/02—Forming enclosures or casings
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Transducers For Ultrasonic Waves (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59187156A JPS6164179A (ja) | 1984-09-05 | 1984-09-05 | 圧電装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59187156A JPS6164179A (ja) | 1984-09-05 | 1984-09-05 | 圧電装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6164179A true JPS6164179A (ja) | 1986-04-02 |
| JPH0510837B2 JPH0510837B2 (enExample) | 1993-02-10 |
Family
ID=16201101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59187156A Granted JPS6164179A (ja) | 1984-09-05 | 1984-09-05 | 圧電装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6164179A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63137491A (ja) * | 1986-11-29 | 1988-06-09 | Shimadzu Corp | 圧電素子型センサ |
| JPH04306011A (ja) * | 1991-04-02 | 1992-10-28 | Murata Mfg Co Ltd | 圧電共振子 |
| US5828159A (en) * | 1994-06-17 | 1998-10-27 | Fujitsu Limited | Resonator device adapted for suppression of fluctuation in resonant resistance, and method of producing same |
-
1984
- 1984-09-05 JP JP59187156A patent/JPS6164179A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63137491A (ja) * | 1986-11-29 | 1988-06-09 | Shimadzu Corp | 圧電素子型センサ |
| JPH04306011A (ja) * | 1991-04-02 | 1992-10-28 | Murata Mfg Co Ltd | 圧電共振子 |
| US5828159A (en) * | 1994-06-17 | 1998-10-27 | Fujitsu Limited | Resonator device adapted for suppression of fluctuation in resonant resistance, and method of producing same |
| US6141844A (en) * | 1994-06-17 | 2000-11-07 | Fujitsu Limited | Method of manufacturing a resonator device adapted for suppression of fluctuation in resonant resistance |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0510837B2 (enExample) | 1993-02-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |