JPS616199A - ダイヤモンドの気相合成方法とその装置 - Google Patents

ダイヤモンドの気相合成方法とその装置

Info

Publication number
JPS616199A
JPS616199A JP59127776A JP12777684A JPS616199A JP S616199 A JPS616199 A JP S616199A JP 59127776 A JP59127776 A JP 59127776A JP 12777684 A JP12777684 A JP 12777684A JP S616199 A JPS616199 A JP S616199A
Authority
JP
Japan
Prior art keywords
diamond
substrate
reaction tube
plasma
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59127776A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518798B2 (enExample
Inventor
Kazutaka Fujii
和隆 藤井
Nobuaki Shohata
伸明 正畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59127776A priority Critical patent/JPS616199A/ja
Publication of JPS616199A publication Critical patent/JPS616199A/ja
Publication of JPH0518798B2 publication Critical patent/JPH0518798B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59127776A 1984-06-21 1984-06-21 ダイヤモンドの気相合成方法とその装置 Granted JPS616199A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59127776A JPS616199A (ja) 1984-06-21 1984-06-21 ダイヤモンドの気相合成方法とその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59127776A JPS616199A (ja) 1984-06-21 1984-06-21 ダイヤモンドの気相合成方法とその装置

Publications (2)

Publication Number Publication Date
JPS616199A true JPS616199A (ja) 1986-01-11
JPH0518798B2 JPH0518798B2 (enExample) 1993-03-12

Family

ID=14968404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59127776A Granted JPS616199A (ja) 1984-06-21 1984-06-21 ダイヤモンドの気相合成方法とその装置

Country Status (1)

Country Link
JP (1) JPS616199A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120738A (ja) * 1985-11-20 1987-06-02 Nec Corp パイロツト信号送受信装置
US4940015A (en) * 1988-07-30 1990-07-10 Kabushiki Kaisha Kobe Seiko Sho Plasma reactor for diamond synthesis
JPH04182388A (ja) * 1990-11-13 1992-06-29 Japan Steel Works Ltd:The ダイヤモンドの合成方法
WO1994026952A1 (en) * 1993-05-14 1994-11-24 Modular Process Technology Corporation Apparatus and method for depositing diamond and refractory materials
US5925413A (en) * 1996-03-25 1999-07-20 Electrovac, Fabrikation Elektrotechnischer Spezialartikel Gesellschaft M.B.H. Method of depositing a polycrystalline diamond layer on a nitride substrate
US6660342B1 (en) 1990-09-25 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Pulsed electromagnetic energy method for forming a film

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62120738A (ja) * 1985-11-20 1987-06-02 Nec Corp パイロツト信号送受信装置
US4940015A (en) * 1988-07-30 1990-07-10 Kabushiki Kaisha Kobe Seiko Sho Plasma reactor for diamond synthesis
US6660342B1 (en) 1990-09-25 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Pulsed electromagnetic energy method for forming a film
US7125588B2 (en) 1990-09-25 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Pulsed plasma CVD method for forming a film
JPH04182388A (ja) * 1990-11-13 1992-06-29 Japan Steel Works Ltd:The ダイヤモンドの合成方法
WO1994026952A1 (en) * 1993-05-14 1994-11-24 Modular Process Technology Corporation Apparatus and method for depositing diamond and refractory materials
US5387288A (en) * 1993-05-14 1995-02-07 Modular Process Technology Corp. Apparatus for depositing diamond and refractory materials comprising rotating antenna
US5925413A (en) * 1996-03-25 1999-07-20 Electrovac, Fabrikation Elektrotechnischer Spezialartikel Gesellschaft M.B.H. Method of depositing a polycrystalline diamond layer on a nitride substrate

Also Published As

Publication number Publication date
JPH0518798B2 (enExample) 1993-03-12

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