JPS6161533B2 - - Google Patents
Info
- Publication number
- JPS6161533B2 JPS6161533B2 JP55005817A JP581780A JPS6161533B2 JP S6161533 B2 JPS6161533 B2 JP S6161533B2 JP 55005817 A JP55005817 A JP 55005817A JP 581780 A JP581780 A JP 581780A JP S6161533 B2 JPS6161533 B2 JP S6161533B2
- Authority
- JP
- Japan
- Prior art keywords
- glass
- semiconductor wafer
- slurry
- film
- organic substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3178—Coating or filling in grooves made in the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP581780A JPS56104443A (en) | 1980-01-23 | 1980-01-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP581780A JPS56104443A (en) | 1980-01-23 | 1980-01-23 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56104443A JPS56104443A (en) | 1981-08-20 |
| JPS6161533B2 true JPS6161533B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-12-26 |
Family
ID=11621629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP581780A Granted JPS56104443A (en) | 1980-01-23 | 1980-01-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56104443A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61164045U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1986-03-20 | 1986-10-11 | ||
| US5448111A (en) * | 1993-09-20 | 1995-09-05 | Fujitsu Limited | Semiconductor device and method for fabricating the same |
| BRPI0720570A2 (pt) | 2006-12-21 | 2014-02-04 | Johnson Diversey Inc | Montagem e método de aplicação de acabamento de piso |
| JP5184717B1 (ja) * | 2012-01-31 | 2013-04-17 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物、半導体装置の製造方法及び半導体装置 |
| JP5827398B2 (ja) * | 2012-05-08 | 2015-12-02 | 新電元工業株式会社 | 半導体接合保護用ガラス組成物の製造方法、半導体装置の製造方法及び半導体装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS491611A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-04-19 | 1974-01-09 | ||
| JPS5128813A (ja) * | 1974-09-04 | 1976-03-11 | Hitachi Ltd | Handotaisochihifukuyogarasu no seizohoho |
-
1980
- 1980-01-23 JP JP581780A patent/JPS56104443A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56104443A (en) | 1981-08-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US2794846A (en) | Fabrication of semiconductor devices | |
| US5698451A (en) | Method of fabricating contacts for solar cells | |
| US4097834A (en) | Non-linear resistors | |
| US4202916A (en) | Surfacing process for the stabilization of semiconductor bodies employing glass containing quartz passivating layer | |
| JPH0364964B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPS6161533B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| TWI612567B (zh) | 半導體裝置的製造方法 | |
| TWI657512B (zh) | 半導體裝置的製造方法 | |
| WO2013011986A1 (ja) | ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法 | |
| JPS6396809A (ja) | 導電ペ−スト | |
| CN117174760B (zh) | 一种场环结构的tvs芯片及其制作方法 | |
| US3432405A (en) | Selective masking method of silicon during anodization | |
| CN114823506A (zh) | 一种新型集成的低漏流稳压管的制备方法 | |
| KR20140019473A (ko) | n 형 확산층 형성 조성물, n 형 확산층의 제조 방법 및 태양 전지 소자의 제조 방법 | |
| JPS6018152B2 (ja) | 太陽電池装置の作製方法 | |
| JP6582747B2 (ja) | ｎ型拡散層形成用組成物、ｎ型拡散層を有する半導体基板の製造方法、及び太陽電池セルの製造方法 | |
| JP2643001B2 (ja) | 半導体装置の製造方法 | |
| JP2017139419A (ja) | ｐ型拡散層形成組成物、ｐ型拡散層付き半導体基板の製造方法、太陽電池素子の製造方法、及び太陽電池素子 | |
| JPS5846058B2 (ja) | 半導体装置の製造方法 | |
| JPS6246505B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| JPH0730138A (ja) | ＣｄＳ焼結膜の製造方法 | |
| JP2017028121A (ja) | ｎ型拡散層形成組成物、ｎ型拡散層付き半導体基板の製造方法、太陽電池素子の製造方法及び太陽電池素子 | |
| JP2017028122A (ja) | ｎ型拡散層形成組成物、ｎ型拡散層付き半導体基板の製造方法、太陽電池素子の製造方法及び太陽電池素子 | |
| JPS5984431A (ja) | 半導体装置の製造方法 | |
| JPS59132135A (ja) | 半導体素子の接合表面安定化方法 |