JPS6160588B2 - - Google Patents

Info

Publication number
JPS6160588B2
JPS6160588B2 JP55141713A JP14171380A JPS6160588B2 JP S6160588 B2 JPS6160588 B2 JP S6160588B2 JP 55141713 A JP55141713 A JP 55141713A JP 14171380 A JP14171380 A JP 14171380A JP S6160588 B2 JPS6160588 B2 JP S6160588B2
Authority
JP
Japan
Prior art keywords
source
mosi
silicon layer
wiring
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55141713A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5766672A (en
Inventor
Tooru Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55141713A priority Critical patent/JPS5766672A/ja
Publication of JPS5766672A publication Critical patent/JPS5766672A/ja
Publication of JPS6160588B2 publication Critical patent/JPS6160588B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP55141713A 1980-10-09 1980-10-09 Semiconductor device Granted JPS5766672A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55141713A JPS5766672A (en) 1980-10-09 1980-10-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55141713A JPS5766672A (en) 1980-10-09 1980-10-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5766672A JPS5766672A (en) 1982-04-22
JPS6160588B2 true JPS6160588B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-12-22

Family

ID=15298461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55141713A Granted JPS5766672A (en) 1980-10-09 1980-10-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5766672A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190662U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1984-11-20 1986-06-12

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6279617A (ja) * 1985-10-03 1987-04-13 Hitachi Ltd 半導体装置およびその製造方法
JPH01307270A (ja) * 1988-06-06 1989-12-12 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ型トランジスタ
JP2009186577A (ja) * 2008-02-04 2009-08-20 Oki Semiconductor Co Ltd 光集積回路、光電子集積回路およびこれらの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190662U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1984-11-20 1986-06-12

Also Published As

Publication number Publication date
JPS5766672A (en) 1982-04-22

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