JPS6159824A - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法

Info

Publication number
JPS6159824A
JPS6159824A JP18191684A JP18191684A JPS6159824A JP S6159824 A JPS6159824 A JP S6159824A JP 18191684 A JP18191684 A JP 18191684A JP 18191684 A JP18191684 A JP 18191684A JP S6159824 A JPS6159824 A JP S6159824A
Authority
JP
Japan
Prior art keywords
resist
back surface
groove
forming
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18191684A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0376586B2 (enrdf_load_stackoverflow
Inventor
Masahiko Shimazaki
島崎　政彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18191684A priority Critical patent/JPS6159824A/ja
Publication of JPS6159824A publication Critical patent/JPS6159824A/ja
Publication of JPH0376586B2 publication Critical patent/JPH0376586B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP18191684A 1984-08-31 1984-08-31 半導体素子の製造方法 Granted JPS6159824A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18191684A JPS6159824A (ja) 1984-08-31 1984-08-31 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18191684A JPS6159824A (ja) 1984-08-31 1984-08-31 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6159824A true JPS6159824A (ja) 1986-03-27
JPH0376586B2 JPH0376586B2 (enrdf_load_stackoverflow) 1991-12-05

Family

ID=16109144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18191684A Granted JPS6159824A (ja) 1984-08-31 1984-08-31 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6159824A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4892842A (en) * 1987-10-29 1990-01-09 Tektronix, Inc. Method of treating an integrated circuit
US4923825A (en) * 1989-05-01 1990-05-08 Tektronix, Inc. Method of treating a semiconductor body
US5872396A (en) * 1994-10-26 1999-02-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with plated heat sink

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4892842A (en) * 1987-10-29 1990-01-09 Tektronix, Inc. Method of treating an integrated circuit
US4923825A (en) * 1989-05-01 1990-05-08 Tektronix, Inc. Method of treating a semiconductor body
US5872396A (en) * 1994-10-26 1999-02-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with plated heat sink
US5998238A (en) * 1994-10-26 1999-12-07 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor device

Also Published As

Publication number Publication date
JPH0376586B2 (enrdf_load_stackoverflow) 1991-12-05

Similar Documents

Publication Publication Date Title
US3897627A (en) Method for manufacturing semiconductor devices
US4145459A (en) Method of making a short gate field effect transistor
JPS63213943A (ja) 三次元半導体集積回路の製造方法
JPS6159824A (ja) 半導体素子の製造方法
US4824800A (en) Method of fabricating semiconductor devices
JPH03198342A (ja) 半導体装置の製造方法
US6074948A (en) Method for manufacturing thin semiconductor device
JPS5921193B2 (ja) 電界効果トランジスタの製造方法
JPS604221A (ja) 半導体装置の製造方法
JPH04124822A (ja) 半導体装置の製造方法
JPH0414212A (ja) レジストパターン形成方法
KR0162757B1 (ko) 분리절연막을 이용한 공중교각 금속의 형성방법
JP2646791B2 (ja) 半導体装置の製造方法
JPS5820137B2 (ja) 半導体装置の製造方法
JP3140828B2 (ja) 半導体装置の製造方法
JP2867169B2 (ja) 半導体装置の製造方法
JPS5820138B2 (ja) 半導体装置の製造方法
JPS5852351B2 (ja) 半導体装置の製造方法
JPS5854652A (ja) 半導体装置の製造方法
JPS616870A (ja) 電界効果トランジスタの製造方法
JPH01270308A (ja) 半導体チツプ
JPH04155933A (ja) 半導体基板上の配線の形成方法
JPS61150326A (ja) 半導体装置の製造方法
JPH04199542A (ja) 空中配線の形成方法
JPH01276642A (ja) ＧａＡｓ半導体装置の製造方法