JPS6159543B2 - - Google Patents
Info
- Publication number
- JPS6159543B2 JPS6159543B2 JP261079A JP261079A JPS6159543B2 JP S6159543 B2 JPS6159543 B2 JP S6159543B2 JP 261079 A JP261079 A JP 261079A JP 261079 A JP261079 A JP 261079A JP S6159543 B2 JPS6159543 B2 JP S6159543B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- type
- region
- layer
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP261079A JPS5595366A (en) | 1979-01-13 | 1979-01-13 | Insulated-gate field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP261079A JPS5595366A (en) | 1979-01-13 | 1979-01-13 | Insulated-gate field-effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5595366A JPS5595366A (en) | 1980-07-19 |
| JPS6159543B2 true JPS6159543B2 (de) | 1986-12-17 |
Family
ID=11534157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP261079A Granted JPS5595366A (en) | 1979-01-13 | 1979-01-13 | Insulated-gate field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5595366A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0287751U (de) * | 1988-12-21 | 1990-07-11 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4326332A (en) * | 1980-07-28 | 1982-04-27 | International Business Machines Corp. | Method of making a high density V-MOS memory array |
| GB2089119A (en) * | 1980-12-10 | 1982-06-16 | Philips Electronic Associated | High voltage semiconductor devices |
| US4571512A (en) * | 1982-06-21 | 1986-02-18 | Eaton Corporation | Lateral bidirectional shielded notch FET |
| US4622569A (en) * | 1984-06-08 | 1986-11-11 | Eaton Corporation | Lateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal means |
| US5204281A (en) * | 1990-09-04 | 1993-04-20 | Motorola, Inc. | Method of making dynamic random access memory cell having a trench capacitor |
-
1979
- 1979-01-13 JP JP261079A patent/JPS5595366A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0287751U (de) * | 1988-12-21 | 1990-07-11 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5595366A (en) | 1980-07-19 |
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