JPS6159527B2 - - Google Patents
Info
- Publication number
- JPS6159527B2 JPS6159527B2 JP13086881A JP13086881A JPS6159527B2 JP S6159527 B2 JPS6159527 B2 JP S6159527B2 JP 13086881 A JP13086881 A JP 13086881A JP 13086881 A JP13086881 A JP 13086881A JP S6159527 B2 JPS6159527 B2 JP S6159527B2
- Authority
- JP
- Japan
- Prior art keywords
- cell
- chamber
- molecular beam
- growth
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000012010 growth Effects 0.000 claims description 52
- 239000013078 crystal Substances 0.000 claims description 14
- 230000007246 mechanism Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000007781 pre-processing Methods 0.000 claims 2
- 239000000463 material Substances 0.000 description 29
- 239000000758 substrate Substances 0.000 description 22
- 230000008020 evaporation Effects 0.000 description 15
- 238000001704 evaporation Methods 0.000 description 15
- 239000000356 contaminant Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13086881A JPS5833825A (ja) | 1981-08-22 | 1981-08-22 | 分子線エピタキシヤル成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13086881A JPS5833825A (ja) | 1981-08-22 | 1981-08-22 | 分子線エピタキシヤル成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5833825A JPS5833825A (ja) | 1983-02-28 |
JPS6159527B2 true JPS6159527B2 (enrdf_load_stackoverflow) | 1986-12-17 |
Family
ID=15044570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13086881A Granted JPS5833825A (ja) | 1981-08-22 | 1981-08-22 | 分子線エピタキシヤル成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5833825A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0451472Y2 (enrdf_load_stackoverflow) * | 1986-08-08 | 1992-12-03 |
-
1981
- 1981-08-22 JP JP13086881A patent/JPS5833825A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5833825A (ja) | 1983-02-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4239955A (en) | Effusion cells for molecular beam epitaxy apparatus | |
US5294572A (en) | Method and apparatus for depositing a layer on a substrate | |
US4883020A (en) | Apparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductor | |
DE60001521T2 (de) | Vorrichtung und Verfahren zur Herstellung von Halbleiterbauelementen | |
JPH07142391A (ja) | 処理方法 | |
JP2759368B2 (ja) | 縦型熱処理装置 | |
JPS6159527B2 (enrdf_load_stackoverflow) | ||
JPH0517879Y2 (enrdf_load_stackoverflow) | ||
JPS63938B2 (enrdf_load_stackoverflow) | ||
JPH05217919A (ja) | 自然酸化膜除去装置 | |
JPS63177426A (ja) | 気相成長方法及び装置 | |
JP3361986B2 (ja) | 基板処理装置および基板処理方法 | |
TW201909277A (zh) | 用於處理基板的方法 | |
JP2608533B2 (ja) | 単結晶薄膜半導体成長方法 | |
JP2656029B2 (ja) | 結晶成長装置 | |
JPH03191063A (ja) | 連続式スパッタリング装置 | |
JP3058655B2 (ja) | ウェーハ拡散処理方法及びウェーハ熱処理方法 | |
JPH05275344A (ja) | 基板処理装置 | |
JP2817356B2 (ja) | 分子線結晶成長装置およびそれを用いる結晶成長方法 | |
JPS63299115A (ja) | 気相成長装置 | |
JPS60109218A (ja) | 分子線エピタキシャル成長装置 | |
JPS6158970B2 (enrdf_load_stackoverflow) | ||
JPS6381915A (ja) | 処理装置 | |
JP2520617B2 (ja) | 半導体結晶成長方法及びそれを実施する装置 | |
JPH0353276B2 (enrdf_load_stackoverflow) |