JPH0451472Y2 - - Google Patents
Info
- Publication number
- JPH0451472Y2 JPH0451472Y2 JP1986122017U JP12201786U JPH0451472Y2 JP H0451472 Y2 JPH0451472 Y2 JP H0451472Y2 JP 1986122017 U JP1986122017 U JP 1986122017U JP 12201786 U JP12201786 U JP 12201786U JP H0451472 Y2 JPH0451472 Y2 JP H0451472Y2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- source
- chamber
- molecular beam
- load lock
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986122017U JPH0451472Y2 (enrdf_load_stackoverflow) | 1986-08-08 | 1986-08-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986122017U JPH0451472Y2 (enrdf_load_stackoverflow) | 1986-08-08 | 1986-08-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6329926U JPS6329926U (enrdf_load_stackoverflow) | 1988-02-27 |
| JPH0451472Y2 true JPH0451472Y2 (enrdf_load_stackoverflow) | 1992-12-03 |
Family
ID=31011822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986122017U Expired JPH0451472Y2 (enrdf_load_stackoverflow) | 1986-08-08 | 1986-08-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0451472Y2 (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58162029A (ja) * | 1982-03-23 | 1983-09-26 | Hoxan Corp | 多結晶シリコンウエハの製造方法 |
| JPS5833825A (ja) * | 1981-08-22 | 1983-02-28 | Nippon Telegr & Teleph Corp <Ntt> | 分子線エピタキシヤル成長装置 |
-
1986
- 1986-08-08 JP JP1986122017U patent/JPH0451472Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6329926U (enrdf_load_stackoverflow) | 1988-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4599245A (en) | Method for making large-surface silicon crystal bodies | |
| EP0164928A2 (en) | Vertical hot wall CVD reactor | |
| JPH0451472Y2 (enrdf_load_stackoverflow) | ||
| GB1392865A (en) | Method for controlling the composition of a deposited film | |
| JP4570232B2 (ja) | プラズマディスプレイ保護膜形成装置および保護膜形成方法 | |
| KR100637896B1 (ko) | 유기물 진공 증착 장치 | |
| JP4445497B2 (ja) | 薄膜蒸着装置及びこれを利用した薄膜蒸着方法 | |
| JPH11126686A (ja) | 有機エレクトロルミネセンス素子の製造装置 | |
| JPH03223458A (ja) | 酸化物超電導体薄膜作製用スパッタリング装置 | |
| JPS61276964A (ja) | 回転式成膜装置 | |
| US20150023866A1 (en) | Method and system of producing large oxide crystals from a melt | |
| JP3775909B2 (ja) | 有機薄膜製造方法、及び有機蒸着装置 | |
| JP4448369B2 (ja) | 成膜方法と、その装置 | |
| JPH051069Y2 (enrdf_load_stackoverflow) | ||
| KR100625966B1 (ko) | 유기 el소자의 박막 증착방법 및 그 장치 | |
| JP2547203B2 (ja) | チタン酸ビスマス薄膜の形成方法 | |
| JPS6287496A (ja) | 単結晶窒化アルミニウム膜の作製方法 | |
| JPH0317906B2 (enrdf_load_stackoverflow) | ||
| JPH0664905A (ja) | 超高純度セレン化亜鉛の製造方法および装置 | |
| JPS63162864A (ja) | 反応性スパッタリング方法 | |
| JPH03253559A (ja) | 酸化物薄膜製造装置 | |
| KR20220083885A (ko) | 조명용 oled 소재의 고순도화 방법 | |
| JPH0474794A (ja) | 基板ホルダおよび基板の装着方法 | |
| JP2021181606A (ja) | 蒸発源装置、蒸着装置、及び蒸発源装置の制御方法 | |
| JPS61256997A (ja) | 分子線エピタキシヤル成長方法 |