JPH0353276B2 - - Google Patents
Info
- Publication number
- JPH0353276B2 JPH0353276B2 JP26549187A JP26549187A JPH0353276B2 JP H0353276 B2 JPH0353276 B2 JP H0353276B2 JP 26549187 A JP26549187 A JP 26549187A JP 26549187 A JP26549187 A JP 26549187A JP H0353276 B2 JPH0353276 B2 JP H0353276B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- gas adsorption
- gate valve
- chamber
- shutter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26549187A JPH01108199A (ja) | 1987-10-22 | 1987-10-22 | 分子線結晶成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26549187A JPH01108199A (ja) | 1987-10-22 | 1987-10-22 | 分子線結晶成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01108199A JPH01108199A (ja) | 1989-04-25 |
JPH0353276B2 true JPH0353276B2 (enrdf_load_stackoverflow) | 1991-08-14 |
Family
ID=17417920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP26549187A Granted JPH01108199A (ja) | 1987-10-22 | 1987-10-22 | 分子線結晶成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01108199A (enrdf_load_stackoverflow) |
-
1987
- 1987-10-22 JP JP26549187A patent/JPH01108199A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH01108199A (ja) | 1989-04-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |