JPH01108199A - 分子線結晶成長装置 - Google Patents
分子線結晶成長装置Info
- Publication number
- JPH01108199A JPH01108199A JP26549187A JP26549187A JPH01108199A JP H01108199 A JPH01108199 A JP H01108199A JP 26549187 A JP26549187 A JP 26549187A JP 26549187 A JP26549187 A JP 26549187A JP H01108199 A JPH01108199 A JP H01108199A
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- cooling water
- cooling
- shutter
- growth chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 57
- 238000001816 cooling Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000000498 cooling water Substances 0.000 claims abstract description 17
- 238000007789 sealing Methods 0.000 claims abstract description 4
- 238000001179 sorption measurement Methods 0.000 claims description 22
- 238000002360 preparation method Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 abstract 5
- 239000000112 cooling gas Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000007872 degassing Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920002449 FKM Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26549187A JPH01108199A (ja) | 1987-10-22 | 1987-10-22 | 分子線結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26549187A JPH01108199A (ja) | 1987-10-22 | 1987-10-22 | 分子線結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01108199A true JPH01108199A (ja) | 1989-04-25 |
| JPH0353276B2 JPH0353276B2 (enrdf_load_stackoverflow) | 1991-08-14 |
Family
ID=17417920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26549187A Granted JPH01108199A (ja) | 1987-10-22 | 1987-10-22 | 分子線結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01108199A (enrdf_load_stackoverflow) |
-
1987
- 1987-10-22 JP JP26549187A patent/JPH01108199A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0353276B2 (enrdf_load_stackoverflow) | 1991-08-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |