JPS6158970B2 - - Google Patents
Info
- Publication number
- JPS6158970B2 JPS6158970B2 JP13086781A JP13086781A JPS6158970B2 JP S6158970 B2 JPS6158970 B2 JP S6158970B2 JP 13086781 A JP13086781 A JP 13086781A JP 13086781 A JP13086781 A JP 13086781A JP S6158970 B2 JPS6158970 B2 JP S6158970B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- molecular beam
- cooling container
- growth chamber
- cooling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 33
- 238000001816 cooling Methods 0.000 claims description 25
- 239000007788 liquid Substances 0.000 claims description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 238000011109 contamination Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000002265 prevention Effects 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 239000013078 crystal Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 4
- 238000009835 boiling Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13086781A JPS5833824A (ja) | 1981-08-22 | 1981-08-22 | 分子線エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13086781A JPS5833824A (ja) | 1981-08-22 | 1981-08-22 | 分子線エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5833824A JPS5833824A (ja) | 1983-02-28 |
| JPS6158970B2 true JPS6158970B2 (enrdf_load_stackoverflow) | 1986-12-13 |
Family
ID=15044548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13086781A Granted JPS5833824A (ja) | 1981-08-22 | 1981-08-22 | 分子線エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5833824A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2750935B2 (ja) * | 1990-03-20 | 1998-05-18 | 富士通株式会社 | 分子線制御方法及び分子線結晶成長装置 |
-
1981
- 1981-08-22 JP JP13086781A patent/JPS5833824A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5833824A (ja) | 1983-02-28 |
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