JPS5833824A - 分子線エピタキシヤル成長装置 - Google Patents

分子線エピタキシヤル成長装置

Info

Publication number
JPS5833824A
JPS5833824A JP13086781A JP13086781A JPS5833824A JP S5833824 A JPS5833824 A JP S5833824A JP 13086781 A JP13086781 A JP 13086781A JP 13086781 A JP13086781 A JP 13086781A JP S5833824 A JPS5833824 A JP S5833824A
Authority
JP
Japan
Prior art keywords
substrate
epitaxial growth
cooling
molecular beam
beam epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13086781A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6158970B2 (enrdf_load_stackoverflow
Inventor
Hideo Sugiura
杉浦　英雄
Akinori Katsui
勝井　明憲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13086781A priority Critical patent/JPS5833824A/ja
Publication of JPS5833824A publication Critical patent/JPS5833824A/ja
Publication of JPS6158970B2 publication Critical patent/JPS6158970B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP13086781A 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置 Granted JPS5833824A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13086781A JPS5833824A (ja) 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13086781A JPS5833824A (ja) 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS5833824A true JPS5833824A (ja) 1983-02-28
JPS6158970B2 JPS6158970B2 (enrdf_load_stackoverflow) 1986-12-13

Family

ID=15044548

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13086781A Granted JPS5833824A (ja) 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS5833824A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5096533A (en) * 1990-03-20 1992-03-17 Fujitsu Limited Molecular beam epitaxial growth device and molecular beam control method therein for exactly controlling thickness and composition of epitaxial film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5096533A (en) * 1990-03-20 1992-03-17 Fujitsu Limited Molecular beam epitaxial growth device and molecular beam control method therein for exactly controlling thickness and composition of epitaxial film
US5147461A (en) * 1990-03-20 1992-09-15 Fujitsu Limited Molecular beam epitaxial growth device and molecular beam control method therein for exactly controlling thickness and composition of epitaxial film

Also Published As

Publication number Publication date
JPS6158970B2 (enrdf_load_stackoverflow) 1986-12-13

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