JPH023620Y2 - - Google Patents
Info
- Publication number
- JPH023620Y2 JPH023620Y2 JP1981147782U JP14778281U JPH023620Y2 JP H023620 Y2 JPH023620 Y2 JP H023620Y2 JP 1981147782 U JP1981147782 U JP 1981147782U JP 14778281 U JP14778281 U JP 14778281U JP H023620 Y2 JPH023620 Y2 JP H023620Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- container
- epitaxial growth
- solution
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1981147782U JPS5853136U (ja) | 1981-10-06 | 1981-10-06 | 液相エピタキシヤル成長装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1981147782U JPS5853136U (ja) | 1981-10-06 | 1981-10-06 | 液相エピタキシヤル成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5853136U JPS5853136U (ja) | 1983-04-11 |
JPH023620Y2 true JPH023620Y2 (enrdf_load_stackoverflow) | 1990-01-29 |
Family
ID=29940628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1981147782U Granted JPS5853136U (ja) | 1981-10-06 | 1981-10-06 | 液相エピタキシヤル成長装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5853136U (enrdf_load_stackoverflow) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4939376A (enrdf_load_stackoverflow) * | 1972-08-14 | 1974-04-12 | ||
JPS5639538A (en) * | 1979-09-07 | 1981-04-15 | Hitachi Ltd | Pattern forming method |
JPS5690573A (en) * | 1979-12-24 | 1981-07-22 | Toshiba Corp | Liquid phase growing process for light emitting diode |
-
1981
- 1981-10-06 JP JP1981147782U patent/JPS5853136U/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5853136U (ja) | 1983-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4000716A (en) | Epitaxial growth device | |
JPH023620Y2 (enrdf_load_stackoverflow) | ||
JPS5588323A (en) | Manufacture of semiconductor device | |
US3649193A (en) | Method of forming and regularly growing a semiconductor compound | |
JPH0570288A (ja) | 化合物半導体単結晶の製造方法及び製造装置 | |
US3697330A (en) | Liquid epitaxy method and apparatus | |
US3804060A (en) | Liquid epitaxy apparatus | |
US3891478A (en) | Deposition of epitaxial layer from the liquid phase | |
US4135952A (en) | Process for annealing semiconductor materials | |
JP2885268B2 (ja) | 液相成長方法及び装置 | |
JPS6120041Y2 (enrdf_load_stackoverflow) | ||
JPS5937855B2 (ja) | 液相エピタキシヤル成長装置 | |
JPS5676525A (en) | Liquid phase epitaxial growth device | |
JPS63159290A (ja) | 液相エピタキシャル成長方法 | |
JPS6120042Y2 (enrdf_load_stackoverflow) | ||
JPH065428Y2 (ja) | 液相エピタキシャル成長用溶媒金属 | |
JPS5920639B2 (ja) | 液相エピタキシヤル成長方法 | |
JPS62292693A (ja) | 液相エピタキシャル成長方法 | |
JP2508726B2 (ja) | 液相エピタキシャル成長方法 | |
JPH0338831Y2 (enrdf_load_stackoverflow) | ||
JP2706210B2 (ja) | 液相結晶成長方法および液相結晶成長装置 | |
JPS61280613A (ja) | 液相エピタキシヤル成長方法 | |
JPS5931711Y2 (ja) | 化合物半導体の溶液成長装置 | |
JPH03112887A (ja) | 液相エピタキシァル成長方法 | |
JPS5927756B2 (ja) | 半導体基板の気相成長装置 |