JPS5853136U - 液相エピタキシヤル成長装置 - Google Patents

液相エピタキシヤル成長装置

Info

Publication number
JPS5853136U
JPS5853136U JP1981147782U JP14778281U JPS5853136U JP S5853136 U JPS5853136 U JP S5853136U JP 1981147782 U JP1981147782 U JP 1981147782U JP 14778281 U JP14778281 U JP 14778281U JP S5853136 U JPS5853136 U JP S5853136U
Authority
JP
Japan
Prior art keywords
epitaxial growth
liquid phase
phase epitaxial
container
growth equipment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1981147782U
Other languages
English (en)
Japanese (ja)
Other versions
JPH023620Y2 (enrdf_load_stackoverflow
Inventor
正己 岩本
田代　信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP1981147782U priority Critical patent/JPS5853136U/ja
Publication of JPS5853136U publication Critical patent/JPS5853136U/ja
Application granted granted Critical
Publication of JPH023620Y2 publication Critical patent/JPH023620Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP1981147782U 1981-10-06 1981-10-06 液相エピタキシヤル成長装置 Granted JPS5853136U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1981147782U JPS5853136U (ja) 1981-10-06 1981-10-06 液相エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1981147782U JPS5853136U (ja) 1981-10-06 1981-10-06 液相エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS5853136U true JPS5853136U (ja) 1983-04-11
JPH023620Y2 JPH023620Y2 (enrdf_load_stackoverflow) 1990-01-29

Family

ID=29940628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1981147782U Granted JPS5853136U (ja) 1981-10-06 1981-10-06 液相エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS5853136U (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939376A (enrdf_load_stackoverflow) * 1972-08-14 1974-04-12
JPS5639538A (en) * 1979-09-07 1981-04-15 Hitachi Ltd Pattern forming method
JPS5690573A (en) * 1979-12-24 1981-07-22 Toshiba Corp Liquid phase growing process for light emitting diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4939376A (enrdf_load_stackoverflow) * 1972-08-14 1974-04-12
JPS5639538A (en) * 1979-09-07 1981-04-15 Hitachi Ltd Pattern forming method
JPS5690573A (en) * 1979-12-24 1981-07-22 Toshiba Corp Liquid phase growing process for light emitting diode

Also Published As

Publication number Publication date
JPH023620Y2 (enrdf_load_stackoverflow) 1990-01-29

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