JPS5833825A - 分子線エピタキシヤル成長装置 - Google Patents

分子線エピタキシヤル成長装置

Info

Publication number
JPS5833825A
JPS5833825A JP13086881A JP13086881A JPS5833825A JP S5833825 A JPS5833825 A JP S5833825A JP 13086881 A JP13086881 A JP 13086881A JP 13086881 A JP13086881 A JP 13086881A JP S5833825 A JPS5833825 A JP S5833825A
Authority
JP
Japan
Prior art keywords
cell
chamber
molecular beam
epitaxial growth
crystal growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13086881A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6159527B2 (enrdf_load_stackoverflow
Inventor
Hideo Sugiura
杉浦　英雄
Akinori Katsui
勝井　明憲
Zeio Kamimura
税男 上村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13086881A priority Critical patent/JPS5833825A/ja
Publication of JPS5833825A publication Critical patent/JPS5833825A/ja
Publication of JPS6159527B2 publication Critical patent/JPS6159527B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP13086881A 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置 Granted JPS5833825A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13086881A JPS5833825A (ja) 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13086881A JPS5833825A (ja) 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS5833825A true JPS5833825A (ja) 1983-02-28
JPS6159527B2 JPS6159527B2 (enrdf_load_stackoverflow) 1986-12-17

Family

ID=15044570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13086881A Granted JPS5833825A (ja) 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS5833825A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6329926U (enrdf_load_stackoverflow) * 1986-08-08 1988-02-27

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6329926U (enrdf_load_stackoverflow) * 1986-08-08 1988-02-27

Also Published As

Publication number Publication date
JPS6159527B2 (enrdf_load_stackoverflow) 1986-12-17

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