JPS6158974B2 - - Google Patents
Info
- Publication number
- JPS6158974B2 JPS6158974B2 JP7755378A JP7755378A JPS6158974B2 JP S6158974 B2 JPS6158974 B2 JP S6158974B2 JP 7755378 A JP7755378 A JP 7755378A JP 7755378 A JP7755378 A JP 7755378A JP S6158974 B2 JPS6158974 B2 JP S6158974B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- mask
- layer
- substrate
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- H10P50/644—
-
- H10P76/405—
-
- H10P76/408—
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81294177A | 1977-07-05 | 1977-07-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5414680A JPS5414680A (en) | 1979-02-03 |
| JPS6158974B2 true JPS6158974B2 (OSRAM) | 1986-12-13 |
Family
ID=25211042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7755378A Granted JPS5414680A (en) | 1977-07-05 | 1978-06-28 | Method of producing semiconductor ic |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0001038B1 (OSRAM) |
| JP (1) | JPS5414680A (OSRAM) |
| DE (1) | DE2860999D1 (OSRAM) |
| IT (1) | IT1109829B (OSRAM) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2922416A1 (de) * | 1979-06-01 | 1980-12-11 | Ibm Deutschland | Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung |
| EP0048291B1 (de) * | 1980-09-19 | 1985-07-03 | Ibm Deutschland Gmbh | Struktur mit einem eine durchgehende Öffnung aufweisenden Siliciumkörper und Verfahren zu ihrer Herstellung |
| DE3267491D1 (en) * | 1981-03-02 | 1986-01-02 | Bbc Brown Boveri & Cie | Process for doping semiconductor bodies for the production of semiconductor devices |
| EP0078336B1 (de) * | 1981-10-30 | 1988-02-03 | Ibm Deutschland Gmbh | Schattenwurfmaske für die Ionenimplantation und die Ionenstrahllithographie |
| US4482427A (en) * | 1984-05-21 | 1984-11-13 | International Business Machines Corporation | Process for forming via holes having sloped walls |
| DE3476281D1 (en) * | 1984-07-16 | 1989-02-23 | Ibm Deutschland | Process to repair transmission masks |
| EP0237844A1 (de) * | 1986-03-18 | 1987-09-23 | BBC Brown Boveri AG | Verfahren zur Herstellung einer Abdeckschicht für die Halbleitertechnik sowie Verwendung der Abdeckschicht |
| JP2725319B2 (ja) * | 1988-11-07 | 1998-03-11 | 富士通株式会社 | 荷電粒子線マスクの製造方法 |
| US5234781A (en) * | 1988-11-07 | 1993-08-10 | Fujitsu Limited | Mask for lithographic patterning and a method of manufacturing the same |
| US4919749A (en) * | 1989-05-26 | 1990-04-24 | Nanostructures, Inc. | Method for making high resolution silicon shadow masks |
| JP2506019B2 (ja) * | 1991-04-25 | 1996-06-12 | 富士通株式会社 | 透過マスクの製造方法 |
| US5326426A (en) * | 1991-11-14 | 1994-07-05 | Tam Andrew C | Undercut membrane mask for high energy photon patterning |
| US6335534B1 (en) | 1998-04-17 | 2002-01-01 | Kabushiki Kaisha Toshiba | Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes |
| DE10017422A1 (de) | 2000-04-07 | 2001-10-11 | Bosch Gmbh Robert | Mikromechanisches Bauelement und entsprechendes Herstellungverfahren |
| JP7645138B2 (ja) * | 2021-06-17 | 2025-03-13 | 株式会社アルバック | ハードマスクの製造方法及び太陽電池の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1235077A (en) * | 1969-05-07 | 1971-06-09 | Standard Telephones Cables Ltd | Improvements in or relating to pressure transducers |
| US4013502A (en) * | 1973-06-18 | 1977-03-22 | Texas Instruments Incorporated | Stencil process for high resolution pattern replication |
| DE2359511C2 (de) * | 1973-11-29 | 1987-03-05 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum lokalisierten Ätzen von Gräben in Siliciumkristallen |
| US4021276A (en) * | 1975-12-29 | 1977-05-03 | Western Electric Company, Inc. | Method of making rib-structure shadow mask for ion implantation |
-
1978
- 1978-06-23 IT IT24892/78A patent/IT1109829B/it active
- 1978-06-28 JP JP7755378A patent/JPS5414680A/ja active Granted
- 1978-07-03 EP EP78100294A patent/EP0001038B1/de not_active Expired
- 1978-07-03 DE DE7878100294T patent/DE2860999D1/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2860999D1 (en) | 1981-11-26 |
| IT1109829B (it) | 1985-12-23 |
| EP0001038B1 (de) | 1981-09-02 |
| JPS5414680A (en) | 1979-02-03 |
| EP0001038A1 (de) | 1979-03-21 |
| IT7824892A0 (it) | 1978-06-23 |
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